MA4X713 [PANASONIC]
Schottky Barrier Diodes (SBD); 肖特基势垒二极管（ SBD ）
| 型号： | MA4X713 |
| 厂家： | 
PANASONIC |
| 描述： | Schottky Barrier Diodes (SBD) |
| 文件： | 总4页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diodes (SBD)
MA4X713 (MA713)
Silicon epitaxial planar type
Unit: mm
+0.02
–0.05
2.90
For switching
1.9±0.2
+0.1
–0.06
For wave detection
0.16
(0.95) (0.95)
I Features
3
4
1
•
Two isolated elements are contained in one package, allowing
high-density mounting
0.5R
•
Two MA3X704A (MA704A) is contained in one package (of a
type in the same direction)
2
(0.2)
•
•
Low forward voltage VF , optimum for low voltage rectification
Optimum for high frequency rectification because of its short
reverse recovery time (trr)
+0.10
–0.05
0.60
10°
•
Mini type 4-pin package
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
I Absolute Maximum Ratings Ta = 25°C
4 : Anode 1
EIAJ : SC-61
Mini4-G1 Package
Parameter
Symbol
VR
Rating
Unit
V
Reverse voltage (DC)
30
150
Peak forward
current
Single
Double *ꢀ
IFM
mA
Marking Symbol: M1N
110
Forward current (DC) Single
Double *ꢀ
IF
30
mA
Internal Connection
20
3
4
Junction temperature
Storage temperature
Tj
125
°C
°C
Tstg
−55 to +125
Note) : Value per chip
*
2
1
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
IR
Conditions
Min
Typ
Max
1
Unit
µA
V
VR = 30 V
IF = 1 mA
VF1
VF2
Ct
0.4
1.0
IF = 30 mA
Terminal capacitance
Reverse recovery time *
VR = 1 V, f = 1 MHz
1.5
1.0
pF
ns
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
Detection efficiency
η
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
ꢀ
2. Rated input/output frequency: 200 MHz 3. : trr measuring instrument
*
Bias Application Unit N-50BU
Input Pulse
Output Pulse
trr
tp
tr
t
10%
90%
IF
t
A
VR
Irr = 1 mA
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Pulse Generator
Wave Form Analyzer
(PG-10N)
(SAS-8130)
Rs = 50 Ω
Ri = 50 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00103AED
1
MA4X713
Characteristics charts between pins 1 and 4, 2 and 3
IF VF
IR VR
VF Ta
103
102
10
103
102
10
1.0
0.8
0.6
0.4
0.2
0
75°C 25°C
−20°C
Ta = 125°C
75°C
Ta = 125°C
IF = 30 mA
1
1
3 mA
1 mA
25°C
10−1
10−2
10−1
10−2
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
30
−40
0
40
)
Ambient temperature Ta °C
80
120
160
(
)
V
( )
Reverse voltage VR V
(
Forward voltage VF
IR Ta
Ct VR
103
102
10
3
2
1
0
f = 1 MHz
Ta = 25°C
VR = 30 V
15 V
1
10−1
10−2
0
5
10
15
20
25
30
−40
0
40
80
120 160 200
( )
V
Reverse voltage VR
(
)
Ambient temperature Ta °C
SKH00103AED
2
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2001 MAR
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