MA4VAT904-1061T [TE]

High IIP3 PIN Diode Variable Attenuator (0.80-1.0 GHz); 高IIP3 PIN二极管可变衰减器( 0.80-1.0千兆赫)
MA4VAT904-1061T
型号: MA4VAT904-1061T
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

High IIP3 PIN Diode Variable Attenuator (0.80-1.0 GHz)
高IIP3 PIN二极管可变衰减器( 0.80-1.0千兆赫)

二极管 射频 微波 衰减器
文件: 总4页 (文件大小:386K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
High IIP3 PIN Diode Variable Attenuator  
0.80-1.0 GHz  
MA4VAT904-1061T  
V2  
Features  
·
·
·
·
·
·
1.0 dB Insertion Loss, Typical  
12 dB Return Loss, Typical  
25 dB Attenuation, Typical  
45 dBm IIP3, Typical ( 1MHz Offset, @ +0dBm Pinc )  
SOIC-8 Surface Mount Package  
RoHs Compliant  
Extra Features  
·
Covers the following Bands:  
·
·
GSM  
AMPS  
·
·
·
·
Usable Bandwidth: 0.60 GHz to 1.20 GHz  
1.5 dB Insertion Loss, Typical  
1.8:1 VSWR, Typical  
SOIC-8 PIN Configuration (Topview)  
18.5 dB Attenuation, Typical  
PIN  
1
Function  
DC1  
Comments  
Description and Applications  
M/A-COM’s MA4VAT904-1061T is a HMIC PIN Diode  
Variable Attenuator which utilizes an integrated 90  
degree 3dB hybrid with a pair of Silicon PIN Diodes  
to perform the required attenuation function as D.C.  
Voltage (Current) is applied.  
2
GND  
3
GND  
4
RFin/out  
RFout/in  
GND  
Symetrical as RF Input/Ouput  
Symetrical as RF Input/Ouput  
5
6
This device operates from 0 to 1.9 Volts at 1.89 mA  
typical control current for maximum attenuation. The  
user can add external biasing resistors to the bias  
ports for higher voltage requirements as required.  
7
GND  
8
DC2  
Absolute Maximum Ratings  
@ +25 °C  
M/A-COM’s MA4VAT904-1061T PIN Diode Variable  
Attenuator is designed for AGC Circuit Applications  
requiring:  
Parameter  
Maximum Ratings  
·
·
·
Lower Insertion Loss  
Lower distortion through attenuation  
Larger dynamic range for wide spread spectrum  
applications  
Operating Temperature  
-40 °C to +85 °C  
Storage Temperature  
Junction Temperature  
RF C.W. Incident Power  
Reversed Current @ -30 V  
Control Current  
-65 °C to +150 °C  
+175 °C  
+33 dBm C.W.  
50nA  
50 mA per Diode  
Notes:  
1. All the above values are at +25 °C, unless otherwise noted.  
2. Exceeding these limits may cause permanent damage.  
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
High IIP3 PIN Diode Variable Attenuator  
0.80-1.0 GHz  
MA4VAT904-1061T  
V2  
Electrical Specifications @ +25 °C  
Parameter  
Frequency Band  
Unit  
Min  
Typ  
Max  
No DC Bias RF Parameter  
Insertion Loss  
0.80 GHz—1.00 GHz  
dB  
dB  
-
1.0  
1.2  
Input Return Loss  
Output Return Loss  
P1dB  
11  
11  
30  
45  
-
12  
-
-
-
-
-
dB  
12  
dBm  
dBm  
V
-
49  
Input IP3  
Control Voltage  
0 V @ OuA  
DC Bias RF Parameter  
Maximum Attenuation  
0.80 GHz—1.00 GHz  
dB  
dB  
18.5  
15  
15  
36  
-
24  
-
-
-
-
-
Input Return Loss @ Max Attenuation  
Output Return Loss @ Max Attenuation  
Input IP3  
21  
dB  
21  
39  
dBm  
V
Control Voltage @ Max Attenuation  
1.9 V @ 1.89 mA  
Typical RF Performance Over Industry Designated RF Frequency Bands  
Band  
Freq  
I. Loss  
Att.  
R. Loss  
IIP3  
Phase  
-Relative-  
(MHz)  
(dB)  
0.9  
(dB)  
22  
(dB)  
12  
(dBm)  
45  
(Degree)  
AMPS  
GSM  
RX  
TX  
824-849  
869-894  
-15°  
0.9  
22  
12  
45  
RX  
TX  
880-915  
925-960  
1.2  
1.2  
20  
20  
11  
11  
45  
45  
-20°  
Notes:  
1. All are typical values only.  
2. Relative phase is the measured Insertion Phase difference between Insertion Loss and 15 dB Attenuation. (Please refer  
to the plots below)  
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
High IIP3 PIN Diode Variable Attenuator  
0.80-1.0 GHz  
MA4VAT904-1061T  
V2  
Plots of Typical RF Characteristics @ +25 °C  
Typical Insertion Loss & Attenuation Plot  
Typical Attenuation vs Voltage Plot  
MA4VAT904-1061  
Attenuation vs Control Voltage  
MA4VAT904-1061  
Typical Attenuation  
0
-5  
0
-5  
-10  
-15  
-20  
-25  
-30  
-10  
-15  
-20  
-25  
-30  
0.600  
0.700  
0.800  
0.900  
1.000  
1.100  
1.200  
Frequency (GHz)  
0
0.5  
1
1.5  
2
2.5  
Bias Voltage (V)  
0V/0mA  
0.77V/0.28mA  
1.77V/1.62mA  
0.93V/0.48mA  
1.89V/1.80mA  
1.27V/0.93mA  
1.53V/1.28mA  
800MHz  
900MHz  
1000MHz  
Typical IIP3 vs Attenuation Plot  
Typical Return Loss @ All Attenuation Levels Plot  
MA4VAT904-1061  
Typical Input Return Loss  
MA4VAT904-1061  
Typical IP3 vs Bias Voltage @900MHz  
(1MHz Offset, +0dBm Pin)  
0
-5  
70  
60  
50  
40  
30  
20  
10  
0
-10  
-15  
-20  
-25  
-30  
0.600  
0.700  
0.800  
0.900  
1.000  
1.100  
1.200  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
Frequency (GHz)  
Bias Voltage (V)  
0V/0mA  
0.77V/0.28mA  
0.93V/0.48mA  
1.27V/0.93mA  
1.53V/1.28mA  
1.77V/1.62mA  
1.89V/1.80mA  
Typical Relative Phase Shift Per Attenuation (Voltage) Plot  
MA4VAT904-1061  
Relative Phase vs Control Voltage  
For Reference ONLY:  
90  
70  
·
·
·
·
·
Insertion Loss  
5dB Attenuation  
= 0.00 V @ 0.00 mA  
= 0.94 V @ 0.49 mA  
50  
10dB Attenuation = 1.26 V @ 0.93 mA  
15dB Attenuation = 1.50 V @ 1.22 mA  
20dB Anttenuation = 1.77V @ 1.60 mA  
30  
10  
-10  
-30  
-50  
-70  
-90  
0
0.5  
1
1.5  
2
2.5  
Bias Voltage (V)  
800MHz  
900MHz  
1000MHz  
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
High IIP3 PIN Diode Variable Attenuator  
0.80-1.0 GHz  
MA4VAT904-1061T  
V2  
Package PIN Designation, External Components, and Equivalent Circuit  
Cbias  
RF IN/OUT  
Lbias  
Cblock  
Control Current  
Rbias  
Cblock  
Lbias  
Cbias  
RF OUT/IN  
External Bias Components  
Rbias= 680 Ohms ( 1.66 V, @1.50 mA )  
Lbias= 150 nH  
Cbias =100 pF  
Cblock =100 pF  
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  

相关型号:

MA4VAT907-1061T

High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz
TE

MA4X159A

Silicon epitaxial planar type
PANASONIC

MA4X159AG

Rectifier Diode, 2 Element, 0.1A, 80V V(RRM), Silicon, ROHS COMPLIANT, MINI4-G3, 4 PIN
PANASONIC

MA4X160

Switching Diodes
PANASONIC

MA4X1600G

Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, MINI4-G3, 4 PIN
PANASONIC

MA4X160A

Silicon epitaxial planar type
PANASONIC

MA4X160AG

暂无描述
PANASONIC

MA4X174

Silicon planar type
PANASONIC

MA4X1740G

Rectifier Diode, 2 Element, 0.1A, 250V V(RRM), Silicon, ROHS COMPLIANT, MINI4-G3, 4 PIN
PANASONIC

MA4X193

Silicon epitaxial planar type
PANASONIC

MA4X194

Silicon epitaxial planar type
PANASONIC

MA4X1940G

Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, MINI4-G3, 4 PIN
PANASONIC