MA4SW610B-1 [TE]
SP6T PIN Diode Switch with Integrated Bias Network; SP6T PIN二极管开关，带有偏置网络
| 型号： | MA4SW610B-1 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | SP6T PIN Diode Switch with Integrated Bias Network |
| 文件： | 总6页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SP6T PIN Diode Switch with
Integrated Bias Network
V 1.00
MA4SW510B-1 Layout
Features
n
n
n
Ultra Broad Bandwidth: 2 GHz to 18 GHz
1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz
Reliable. Fully Monolithic, Glass Encapsulated
Construction
Description
The MA4SW610B-1 is a Reflective SP6T Series-Shunt broad band
switch with integrated bias networks made with M/A-COM’s
HMICTM (Heterolithic Microwave Integrated Circuit) process, US
Patent 5,268,310. This process allows the incorporation of silicon
pedestals that form series and shunt diodes or vias by imbedding
them in low loss, low dispersion glass. By using small spacing
between elements, this combination of silicon and glass gives
HMIC devices low loss and high isolation performance
through 18 GHz.
Applications
These high performance switches are suitable for the use in
multi-band ECM, Radar, and instrumentation control circuits
where high isolation to insertion loss ratios are required. With a
standard +5 V/-5 V, TTL controlled PIN diode driver, 80 ns
switching speeds are achieved.
Nominal Chip Dimensions
Chip Dimensions (mm)
X
Y
Chip
3370
3120
Pad Dimensions (mm)
X
Y
RF
DC
400
125
125
125
Absolute Maximum Ratings1
Pad Locations (mm)
@ TA = +25 °C (unless otherwise
specified)
X
Y
J1
J2
B2
J3
B3
J4
B4
J5
B5
J6
B6
J7
B7
0
0
-1535
-1535
-1535
-1535
-750
+300
+1000
+1800
+2500
+2820
+2820
+2820
+2820
+1800
+1100
+300
0
Parameter
Value
Operating Temperature
Storage Temperature
-65 °C to +125 °C
-65 °C to +150 °C
+ 30 dBm
RF C.W. Incident Power
(+/-20 mA)
-50
+750
+1450
+1535
+1535
+1535
+900
Bias Current (Forward)
+/- 40 mA
15 V
Applied Voltage (Reverse)
1. Exceeding any of these values may result in permanent
damage
Pad Locations Relative to J1
SP6T PIN Diode Switch with Integrated Bias Network
MA4SW610B-1
V 1.00
Electrical Specifications @ TA = 25 °C, +/- 10 mA Bias Current
(On-Wafer Measurements)
Parameters
Frequency
Minimum
Typical
Maximum
Units
6 GHz
-
1.0
1.4
dB
Insertion Loss
12 GHz
-
1.3
2.0
dB
18 GHz
6 GHz
-
1.9
49
2.9
-
dB
dB
43
Isolation
12 GHz
18 GHz
6 GHz
35
30
-
43
39
18
-
-
-
dB
dB
dB
Input Return Loss
12 GHz
-
20
-
dB
18 GHz
6 GHz
-
-
16
19
-
-
dB
dB
Output Return Loss
Switching Speed1
12 GHz
18 GHz
10 GHz
-
-
-
22
20
80
-
-
-
dB
dB
nS
1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver
output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ohms to achieve
80 ns rise and fall times.
Typical Driver Connections
Control Level (DC Current)
Condition of RF Output
B2
B3
B4
B5
B6
B7
J2-J1
J3-J1
J4-J1
J5-J1
J6-J1
J7-J1
-10
mA
+10
mA
+10
mA
+10
mA
+10
mA
+10
mA
Low Loss
Isolation
Isolation
Isolation
Isolation
Isolation
+10
mA
-10
mA
+10
mA
+10
mA
+10
mA
+10
mA
Isolation
Isolation
Low Loss
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
+10
mA
+10
mA
-10
mA
+10
mA
+10
mA
+10
mA
Isolation
Low
Loss
+10
mA
+10
mA
+10
mA
-10
mA
+10
mA
+10
mA
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Low Loss
Isolation
Isolation
Isolation
Low Loss
Isolation
Isolation
Isolation
+10
mA
+10
mA
+10
mA
+10
mA
-10
mA
+10
mA
+10
mA
+10
mA
+10
mA
+10
mA
+10
mA
-10
mA
Low Loss
Note: Typical Switching Speed measured from 10 % to 90 % of detected RF signal driven by a TTL compatible driver.
2
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
SP6T PIN Diode Switch with Integrated Bias Network
Microwave Performance
MA4SW610B-1
V 1.00
TYPICAL INSERTION LOSS
0.00
-1.00
-2.00
-3.00
-4.00
-5.00
2.00
4.00
6.00
J3
8.00 10.00 12.00 14.00 16.00 18.00
FREQUENCY ( GHz )
J2
J4
J5
J6
J7
TYPICAL ISOLATION
0.00
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
-80.00
2.00
4.00
6.00
8.00
10.00 12.00 14.00 16.00 18.00
FREQUENCY ( GHz )
J2
J3
J4
J5
J6
J7
3
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
SP6T PIN Diode Switch with Integrated Bias Network
Microwave Performance
MA4SW610B-1
V 1.00
TYPICAL INPUT RETURN LOSS
0.00
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
2.00
4.00
6.00
8.00 10.00 12.00 14.00 16.00 18.00
FREQUENCY ( GHz )
J2
J3
J4
J5
J6
J7
TYPICAL OUTPUT RETURN LOSS
0.00
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
2.00
4.00
6.00
8.00 10.00 12.00 14.00 16.00 18.00
FREQUENCY ( GHz )
J2
J3
J4
J5
J6
J7
4
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
SP6T PIN Diode Switch with Integrated Bias Network
MA4SW610B-1
V 1.00
Assembly Considerations
Eutectic Die Attachment
The following precautions should be observed for successful
assembly of the die.
An 80/20 gold-tin eutectic solder preform is recommended
with a work surface temperature of 255 oC and a tool tip
temperature of 265 oC. When hot gas is applied, the tool tip
o
temperature should be 290 C. The chip should not be exposed
o
to temperatures greater than 320 C for more than 10 seconds.
Cleanliness
These chips should be handled in a clean environment. Do not
attempt to clean die after installation.
No more than three seconds should be required for the attachment.
Epoxy Die Attachment
Assembly should be preheated to 125-150 oC. A Controlled
thickness of 2 mils is recommended for best electrical and
thermal conductivity. A thin epoxy fillet should be visible
around the perimeter of the chip after placement. Cure epoxy
per manufacturer’s recommended schedule.
Electro-Static Sensitivity
The MA4SW Series PIN switches are ESD, Class 1 sensitive.
The proper ESD handling procedures should be used.
Wire Bonding
Thermosonic wedge wire bonding using 0.003” x 0.00025”
ribbon or 0.001” diameter gold wire is recommended. A stage
o
temperature of 150 C and a force of 18 to 22 grams should be
used. Ultrasonic energy should be adjusted to the minimum
required. RF bonds should be as short as possible to minimize
inductance.
Mounting
These chips have Ti-Pt-Au back metal. They can be die
mounted with a 80Au/20Sn or Sn62/Pb36/Ag2 solder preform
or electrically conductive Ag epoxy. Mounting surface must
be clean of oils and contaminants and flat.
5
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
SP6T PIN Diode Switch with Integrated Bias Network
Operation of the MA4SW610B-1 Switch
MA4SW610B-1
V 1.00
The Simultaneous Application of Negative DC Current to the Low Loss Port and Positive DC current to the Remaining Isolated
Ports as shown in the schematic provides successful RF operation of the MA4SW Series of PIN Diode Switches. The Backside
Area of the Die is the RF and DC Return Ground Plane. The DC Bias Return is located on Common Port J1. Constant Current
Sources should supply the DC Control Currents.
In the Low Loss State, the Series Diode must be Forward Biased and the Shunt Diode Reverse Biased. For All the Isolated Ports,
the Shunt Diode is Forward Biased while the Series Diode is Reverse Biased.
This Design Improves Insertion Loss, P1dB, IP3, and Switching Speed by Incorporating a Voltage Pull-up Resistor
( ~ 100 W ) in the DC Return Path, ( J1 ) under Insertion Loss Bias. A Typical Value of | -3 V | is achieved at the Insertion Loss
Bias Node using +/- 20 mA, with a Standard , +/- 5 V TTL Controlled PIN Diode Driver.
Fig 1: MA4SW610B-1 Schematic
J1 ( Common Port )
DC Bias
J7
J2
J6
J5
J4
J3
6
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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