VN771P13TR [STMICROELECTRONICS]
BRUSH DC MOTOR CONTROLLER, 14A, PDSO28, SO-28;
| 型号： | VN771P13TR |
| 厂家： | 
ST |
| 描述： | BRUSH DC MOTOR CONTROLLER, 14A, PDSO28, SO-28 电动机控制 光电二极管 |
| 文件： | 总11页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN771P
QUAD SMART POWER SOLID STATE RELAY
FOR COMPLETE H BRIDGE CONFIGURATIONS
TYPE
RDS(on)
*
IOUT
VCC
VN771P
0.135 Ω
14 A
26 V
* Total resistance of one side in bridge configuration
■
■
■
SUITED AS LOW VOLTAGE BRIDGE
LINEAR CURRENT LIMITATION
VERY LOW STAND-BY POWER
DISSIPATION
■
■
■
■
■
■
SHORT CIRCUIT PROTECTED
STATUS FLAG DIAGNOSTICS
OPEN DRAIN DIAGNOSTICS OUTPUT
INTEGRATED CLAMPING CIRCUITS
UNDER-VOLTAGE PROTECTION
ESD PROTECTION
SO-28
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140 oC. When this temperature returns to 125 oC
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor (one for each channel) being
located inside each of the two Power MOS areas.
This positioning allows the device to operate with
one channel in automatic thermal cycling and the
other one on a normal load. An internal function
of the devices ensures the fast demagnetization
DESCRIPTION
The VN771P is a device formed by three
monolithic chips housed in a standard SO28
package: a double high side and two low side
switches. Both the double high side and low side
switches are made using STMicroelectronics
VIPower technology. This device is suitable to
drive a DC motor in a bridge configurationas well
as to be used as a quad switch for any low
voltage application. The dual high side switches
have built-in thermal shut-down to protect the
chip from over temperature and short circuit,
status output to provide indication for open load
in off and on state, overtemperature conditions
and stuck-on to VCC. The low side switches are
two OMNIFET types (fully autoprotected Power
MOSFET in VIPower technology). They have
built-in thermal shut-down, linear current limitation
and overvoltage clamping. Fault feedback for
thermal intervention can be detected by
monitoring the voltage at the input pin.
of inductive loads with a typical voltage (Vdemag
)
of -18V. This function allows to greatly reduces
the power dissipation according to the formula:
dem =0.5• Lload • (Iload)2 • [(VCC+Vdemag)/Vdemag] • f
where f = switching frequencyand
demag = demagnetizationvoltage.
In this device if the GND pin is disconnected,with
VCC not exceeding 16V, both channel will switch
off.
P
V
LOW-SIDE SWITCHES
DUAL HIGH-SIDE SWITCH
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (Iiss) flows into the Input pin in order to
supply the internal circuitry.
From the falling edge of the input signal, the
status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (tpol) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
1/11
September 1998
VN771P
BLOCK DIAGRAM
2/11
VN771P
CONNECTION DIAGRAM
PIN FUNCTION
No
NAME
DRAIN 3
INPUT 3
N.C.
FUNCTION
Drain of Switch 3 (low-side switch)
1, 3, 25, 28
2
Input of Switch 3 (low-side switch)
Not Connected
4, 11
5, 10, 19, 24
VCC
Drain of Switches 1and 2 (high-side switches) and Power Supply Voltage
Ground of Switches 1 and 2 (high-side switches)
Input of Switch 1 (high-side switch)
6
GND
7
INPUT 1
8
9
DIAGNOSTIC Diagnostic of Switches 1 and 2 (high-side switches)
INPUT 2
DRAIN 4
Input of Switch 2 (high-side switch)
Drain of Switch 4 (low-side switch)
Input of Switch 4 (low-side switch)
Source of Switch 4 (low-side switch)
Source of Switch 2 (high-side switch)
Source of Switch 1 (high-side switch)
Source of Switch 3 (low-side switch)
12, 14, 15, 18
13
INPUT 4
16, 17
20, 21
22, 23
26, 27
SOURCE 4
SOURCE 2
SOURCE 1
SOURCE 3
3/11
VN771P
PROTECTION CIRCUITS
inductive loads.
DUAL HIGH SIDE SWITCH
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperature and are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperature cutout occurs at
minimum 150oC. The device is automatically
restarted when the chip temperature falls
below 135oC.
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a a small resistor between pin 2 (GND) and
ground. The suggested resistance value is about
150Ω. In any case the maximum voltage drop on
this resistor should not overcome 0.5V.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the
device ground (see application circuit in fig. 3),
which becomes the common signal GND for the
whole control board avoiding shift of Vih, Vil and
- STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100 Ω.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of these devices are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a smallincrease in RDS(on)).
Vstat
.
LOW SIDE SWITCHES
The devices integrate:
- OVERVOLTAGE CLAMP PROTECTION:
internally set at 42V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
TRUTH TABLE (for Dual high-side switch only)
INPUT 1
INPUT 2 SOURCE 1 SOURCE 2 DIAGNOSTIC
Normal Operation
L
H
L
L
H
H
L
L
H
L
L
H
H
L
H
H
H
H
H
H
Under-voltage
X
H
X
X
X
H
L
L
X
L
X
L
H
L
L
Thermal Shutdown
Channel 1
Channel 2
Channel 1
Open Load
H
L
X
L
H
L
X
L
L
L
X
L
H
L
X
L
H
L
L
L
Channel 2
Channel 1
Channel 2
Output Shorted to VCC
H
L
X
L
H
H
X
L
L
L
X
L
H
L
X
L
H
H
L
L
NOTE: The low-side switches have the fault feedback which can be detected by monitoring the voltage at the input pins.
L = Logic LOW, H = Logic HIGH, X = Don’t care
4/11
VN771P
ABSOLUTE MAXIMUM RATING (-40 oC < Tj < 150 oC)
HIGH SIDE SWITCH
Symbol
Parameter
Value
Unit
V
V(BR)DSS Drain-Source Breakdown Voltage
40
IOUT
IR
Output Current (cont.)
Reverse Output Current
Input Current
14
A
-14
±10
A
IIN
mA
V
-VCC
ISTAT
VESD
Ptot
Tj
Reverse Supply Voltage
Status Current
-4
±10
mA
V
Electrostatic Discharge (C = 100 pF, R =1.5 KΩ)
2000
o
Power Dissipation at Tc = 25 C
Internally Limited
-40 to 150
-55 to 150
W
Junction Operating Temperature
Storage Temperature
oC
oC
Tstg
LOW SIDE SWITCH
Symbol
Parameter
Value
Internally Clamped
18
Unit
V
V(BR)DSS Drain-Source Breakdown Voltage
VIN
ID
Input Voltage
V
Drain Current
Internally Limited
-28
A
IR
Reverse DC Output Current
Electrostatic Discharge (C = 100 pF, R =1.5 KΩ)
A
VESD
Ptot
Tj
2000
V
o
Total Dissipation at Tc = 25 C
Internally Limited
Internally Limited
-55 to 150
W
oC
oC
Operating Junction Temperature
Storage Temperature
Tstg
THERMAL DATA
Rthj-case Thermal Resistance Junction-case (High-side switch) Max
20
20
60
oC/W
oC/W
oC/W
Rthj-case Thermal Resistance Junction-case (Low-side switch)
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH
(8 < VCC < 16 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified)
POWER
Symbol
VCC
Parameter
Supply Voltage
Test Conditions
Min.
Typ.
Max.
Unit
V
6
13
26
5.2
0.1
100
2
o
In(*)
Ron
Nominal Current
On State Resistance
Supply Current
Tc = 85 C VDS(on) ≤ 0.5 VCC = 13 V
3.4
A
o
IOUT = In VCC = 13 V Tj = 25 C
0.065
Ω
o
IS
Off State
Tj = 25 C VCC = 13 V
35
10
µA
V
o
VDS(MAX) Maximum Voltage Drop IOUT = 13 A Tj = 85 C VCC = 13 V
1.2
5
o
Ri
Output to GND internal Tj = 25 C
Impedance
20
KΩ
5/11
VN771P
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued)
SWITCHING
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)(^) Turn-on Delay Time Of Rout = 2.7 Ω
5
35
200
µs
Output Current
tr(^)
Rise Time Of Output
Current
Rout = 2.7 Ω
28
10
28
110
140
75
360
500
360
µs
µs
µs
td(off)(^) Turn-off Delay Time Of Rout = 2.7 Ω
Output Current
tf(^)
Fall Time Of Output
Current
Rout = 2.7 Ω
(di/dt)on Turn-on Current Slope Rout = 2.7 Ω
(di/dt)off Turn-off Current Slope Rout = 2.7 Ω
0.003
0.005
0.1
0.1
A/µs
A/µs
LOGIC INPUT
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VIL
Input Low Level
Voltage
1.5
V
VIH
Input High Level
Voltage
3.5
0.2
(• )
V
V
VI(hyst.) Input Hysteresis
Voltage
0.9
30
1.5
IIN
Input Current
VIN = 5 V Tj = 25 oC
100
7
µA
VICL
Input Clamp Voltage
IIN = 10 mA
IIN = -10 mA
5
6
-0.7
V
V
PROTECTION AND DIAGNOSTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSTAT
Status Voltage Output ISTAT = 1.6 mA
Low
0.4
V
VUSD
VSCL
TTSD
Under Voltage Shut
Down
3.5
5
4.5
6
7
V
Status Clamp Voltage
ISTAT = 10 mA
ISTAT = -10 mA
6
-0.7
V
V
oC
Thermal Shut-down
Temperature
140
160
180
50
TSD(hyst.) Thermal Shut-down
Hysteresis
oC
TR
VOL
IOL
Reset Temperature
Open Voltage Level
125
2.5
0.6
oC
V
Off-State (note 2)
On-State
4
5
Open Load Current
Level
0.9
1.4
A
6/11
VN771P
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued)
PROTECTION AND DIAGNOSTICS
Symbol
tpovl
Parameter
Status Delay
Status Delay
Test Conditions
Min.
Typ.
5
Max.
10
Unit
µs
(note 3)
(note 3)
tpol
50
500
2500
µs
(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
(^) See switching time waveform
() The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
note 1: The Nominal Current is the current at Tc = 85 oC forbattery voltage of 13V which produces a voltage drop of 0.5 V
note 2: IOL(off) = (VCC -VOL)/ROL
note 3: tpovl tpol: ISO definition
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES
(Tcase = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCLAMP
Drain-source Clamp
Voltage
ID = 10 A
Vin = 0
36
42
48
V
VCLTH
VINCL
IDSS
Drain-source Clamp
Threshold Voltage
ID = 2 mA Vin = 0
Iin = -1 mA
35
-1
V
V
Input-Source Reverse
Clamp Voltage
-0.3
Zero Input Voltage
Drain Current (Vin = 0) VDS = 25 V Vin = 0
VDS = 13 V Vin = 0
50
200
µA
µA
IISS
Supply Current from
Input Pin
VDS = 0 V Vin = 10 V
250
500
µA
ON ( )
Symbol
Parameter
Test Conditions
VDS = Vin ID + Iin = 1 mA
Min.
Typ.
Max.
Unit
VIN(th)
Input Threshold
Voltage
0.8
3
V
RDS(on)
Static Drain-source On Vin = 10 V ID = 10 A
0.035
0.05
Ω
Ω
Resistance
Vin = 5 V
ID = 10 A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs ( )
Forward
VDS = 13 V
ID = 10 A
14
18
S
Transconductance
Coss
Output Capacitance
VDS = 13 V f = 1 MHz Vin = 0
700
900
pF
7/11
VN771P
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued)
SWITCHING (**)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 10 A
Rgen = 10 Ω
100
330
400
155
200
600
700
300
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 10 A
Rgen = 1000 Ω
450
1.7
7.5
3.4
700
3
10
5
ns
µs
µs
µs
(di/dt)on Turn-on Current Slope VDD = 15 V
Vin = 10 V
ID = 10 A
Rgen = 10 Ω
35
A/µs
Qi
Total Input Charge
VDD = 12 V ID = 10 A Vin = 10 V
60
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
VSD ( )
Forward On Voltage
ISD = 10 A Vin = 0
1.6
trr
(
)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 10 A
VDD = 30 V
(see test circuit, figure 5)
di/dt = 100 A/µs
Tj = 25 C
180
0.45
7
ns
o
Qrr
(
)
µC
IRRM
(
)
A
PROTECTION
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Tjsh
(
)
Overtemperature
Shutdown
150
oC
Tjrs
Igf
(
)
Overtemperature Reset
Fault Sink Current
135
oC
(
)
Vin = 10 V VDS = 13 V
50
20
mA
mA
Vin = 5 V
VDS = 13 V
Ilim
tdlim
Eas
Drain Current Limit
Vin = 10 V VDS = 13 V
20
20
28
28
40
40
A
A
Vin = 5 V
VDS = 13 V
(
)
Step Response
Current Limit
Vin = 10 V
Vin = 5 V
25
70
40
120
µs
µs
o
(
)
Single Pulse Avalance starting Tj = 25 C
2.5
J
Energy
Vin = 10 V VDD = 20 V
Rgen = 1KΩ L = 10 mH
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
) Parameters guaranteed by design/characterization
(
8/11
VN771P
TYPICAL APPLICATION DIAGRAM
9/11
VN771P
SO-28 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
2.65
0.30
0.49
0.32
MIN.
MAX.
0.104
0.012
0.019
0.012
A
a1
b
0.10
0.35
0.23
0.004
0.013
0.009
b1
C
c1
D
E
0.50
0.020
45 (typ.)
17.7
18.1
0.697
0.393
0.713
0.419
10.00
10.65
e
1.27
0.050
0.650
e3
F
16.51
7.40
0.40
7.60
1.27
0.291
0.016
0.299
0.050
L
S
8 (max.)
0016572
10/11
VN771P
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics – Printed in Italy – All RightsReserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
.
11/11
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