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VN800PT(8961) [STMICROELECTRONICS]

BUF OR INV BASED PRPHL DRVR, PSSO4, PPAK-5;
VN800PT(8961)
型号： VN800PT(8961)
厂家： ST    ST
描述：

BUF OR INV BASED PRPHL DRVR, PSSO4, PPAK-5

驱动 接口集成电路 驱动器
文件： 总22页 (文件大小：249K)
中文：  中文翻译
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VN800S(8961)  
/ VN800PT(8961)  
HIGH SIDE DRIVER  
TYPE  
RDS(on)  
IOUT  
VCC  
VN800S(8961)  
VN800PT(8961)  
135 mΩ  
1.2 A  
36 V  
■ CMOS COMPATIBLE INPUT  
■ THERMAL SHUTDOWN  
■ CURRENT LIMITATION  
■ SHORTED LOAD PROTECTION  
■ UNDERVOLTAGE AND OVERVOLTAGE  
SHUTDOWN  
■ PROTECTION AGAINST LOSS OF GROUND  
■ VERY LOW STAND-BY CURRENT  
SO-8  
ORDER CODES  
PPAK  
PACKAGE  
TUBE  
T&R  
SO-8  
PPAK  
VN800S(8961) VN800S(8961)TR  
VN800PT(8961) VN800PT(8961)TR  
■ REVERSE BATTERY PROTECTION (*)  
DESCRIPTION  
compatibility table). Active current limitation  
combined with thermal shutdown and automatic  
restart protect the device against overload.  
Device automatically turns off in case of ground  
pin disconnection.  
The VN800S(8961), VN800PT(8961) are  
monolithic  
devices  
made  
by  
using  
STMicroelectronics VIPower M0-3 Technology,  
intended for driving any kind of load with one side  
connected to ground.  
Active V pin voltage clamp protects the device  
CC  
against low energy spikes (see ISO7637 transient  
BLOCK DIAGRAM  
V
CC  
OVERVOLTAGE  
DETECTION  
V
CC  
CLAMP  
UNDERVOLTAGE  
DETECTION  
GND  
Power CLAMP  
DRIVER  
OUTPUT  
LOGIC  
INPUT  
CURRENT LIMITER  
STATUS  
OVERTEMPERATURE  
DETECTION  
(*) See note at page 8  
July 2002  
1/22  
VN800S(8961) / VN800PT(8961)  
ABSOLUTE MAXIMUM RATING  
Value  
Symbol  
Parameter  
Unit  
SO-8  
PPAK  
VCC  
- VCC  
- IGND  
IOUT  
- IOUT  
IIN  
DC Supply Voltage  
41  
V
V
Reverse DC Supply Voltage  
DC Reverse Ground Pin Current  
DC Output Current  
- 0.3  
- 200  
mA  
A
Internally Limited  
- 6  
Reverse DC Output Current  
DC Input Current  
A
+/- 10  
mA  
V
VIN  
Input Voltage Range  
-3/+VCC  
+ VCC  
VSTAT  
DC Status Voltage  
V
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)  
- INPUT  
4000  
4000  
5000  
5000  
V
V
V
V
VESD  
- STATUS  
- OUTPUT  
- VCC  
Maximum Switching Energy  
(L=77.5mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=1.5A)  
Maximum Switching Energy  
(L=125mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=1.5A)  
Power Dissipation TC=25°C  
Junction Operating Temperature  
Case Operating Temperature  
Storage Temperature  
EMAX  
EMAX  
121  
mJ  
mJ  
195  
41.7  
Ptot  
Tj  
4.2  
W
°C  
°C  
°C  
Internally Limited  
- 40 to 150  
Tc  
Tstg  
- 55 to 150  
Max Inductive Load (VCC=30V; RLOAD=48Ω; Tamb=100°C;  
Rthcase>ambient≤25°C/W)  
Lmax  
2
H
CONNECTION DIAGRAM (TOP VIEW)  
VCC  
5
4
3
2
OUTPUT  
STATUS  
VCC  
N.C.  
5
4
STATUS  
INPUT  
GND  
OUTPUT  
OUTPUT  
VCC  
INPUT  
GND  
1
8
1
SO-8  
PPAK  
CURRENT AND VOLTAGE CONVENTIONS  
IS  
IIN  
VCC  
GND  
INPUT  
ISTAT  
IOUT  
STATUS  
VCC  
OUTPUT  
VIN  
VOUT  
VSTAT  
IGND  
2/22  
VN800S(8961) / VN800PT(8961)  
THERMAL DATA  
Symbol  
Value  
Unit  
Parameter  
SO-8  
-
PPAK  
Rthj-case  
Rthj-lead  
Rthj-amb  
Thermal Resistance Junction-case  
Thermal Resistance Junction-lead  
Max  
Max  
Max  
3
-
°C/W  
°C/W  
°C/W  
30  
Thermal Resistance Junction-ambient  
93 (*)  
78 (**)  
2
(*) When mounted on FR4 printed circuit board with 0.5 cm of copper area (at least 35µ thick) connected to all V pins.  
CC  
2
(**) When mounted on FR4 printed circuit board with 0.5 cm of copper area (at least 35µ thick).  
ELECTRICAL CHARACTERISTICS (8V<V <36V; -40°C<T<150°C, unless otherwise specified)  
CC  
j
POWER  
Symbol  
VCC  
Parameter  
Test Conditions  
Min  
5.5  
3
Typ  
Max  
36  
Unit  
V
Operating Supply Voltage  
Undervoltage Shut-down  
Overvoltage Shut-down  
VUSD  
VOV  
4
5.5  
V
36  
V
IOUT =0.5A; Tj=25°C  
135  
270  
20  
mΩ  
mΩ  
µA  
mA  
mA  
RON  
On State Resistance  
IOUT=0.5A  
Off State; VCC=24V; Tcase=25°C  
On State; VCC=24V  
10  
IS  
Supply Current  
1.5  
3.5  
2.6  
On State; VCC=24V; Tcase=100°C  
VCC=VSTAT=VIN=VGND=24V  
VOUT=0V  
ILGND  
Output Current at turn-off  
1
mA  
IL(off1)  
IL(off2)  
IL(off3)  
Off State Output Current  
Off State Output Current  
Off State Output Current  
VIN=VOUT=0V  
0
50  
5
µA  
µA  
µA  
VIN=VOUT=0V; Vcc=13V; Tj =125°C  
VIN=VOUT=0V; Vcc=13V; Tj =25°C  
3
SWITCHING (V =24V)  
CC  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
RL=48Ω from VIN rising edge to  
td(on)  
Turn-on Delay Time  
Turn-off Delay Time  
10  
µs  
V
OUT=2.4V  
RL=48Ω from VIN falling edge to  
VOUT=21.6V  
td(off)  
40  
µs  
See  
relative  
diagram  
dVOUT  
dt(on)  
/
/
RL=48Ω from VOUT=2.4V to  
VOUT=19.2V  
Turn-on Voltage Slope  
Turn-off Voltage Slope  
V/µs  
See  
relative  
diagram  
dVOUT  
dt(off)  
RL=48Ω from VOUT=21.6V to  
V/µs  
V
OUT=2.4V  
INPUT PIN  
Symbol  
VINL  
IINL  
Parameter  
Input Low Level  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
1.25  
Low Level Input Current  
Input High Level  
VIN=1.25V  
VIN=3.25V  
1
µA  
V
VINH  
IINH  
3.25  
High Level Input Current  
Input Hysteresis Voltage  
Input Current  
10  
µA  
V
VI(hyst)  
IIN  
0.5  
VIN=VCC=36V  
200  
µA  
3/22  
1
VN800S(8961) / VN800PT(8961)  
ELECTRICAL CHARACTERISTICS (continued)  
STATUS PIN  
Symbol  
VSTAT  
Parameter  
Test Conditions  
Min  
Typ  
Max  
0.5  
10  
Unit  
V
Status Low Output Voltage ISTAT=1.6 mA  
ILSTAT  
Status Leakage Current  
Normal Operation; VSTAT=VCC=36 V  
µA  
Status Pin Input  
Capacitance  
CSTAT  
Normal Operation; VSTAT= 5V  
30  
pF  
PROTECTIONS  
Symbol  
Parameter  
Test Conditions  
Min  
150  
135  
7
Typ  
Max  
Unit  
°C  
TTSD  
TR  
Shut-down Temperature  
Reset Temperature  
Thermal Hysteresis  
175  
200  
°C  
Thyst  
15  
°C  
Status Delay in Overload  
Condition  
TSDL  
Ilim  
Tj>T  
20  
2
µs  
A
jsh  
DC Short Circuit Current  
Turn-off Output Clamp  
Voltage  
VCC=16V; RLOAD=10mΩ  
1.2  
Vdemag  
IOUT=0.5 A; L=6mH  
VCC-47 VCC-52 VCC-57  
V
OVERTEMP STATUS TIMING  
Tj>Tjsh  
VIN  
VSTAT  
tSDL  
tSDL  
4/22  
2
VN800S(8961) / VN800PT(8961)  
Switching time Waveforms  
VOUT  
90%  
80%  
tr  
dVOUT/dt(off)  
dVOUT/dt(on)  
10%  
tf  
t
VIN  
td(on)  
td(off)  
t
TRUTH TABLE  
CONDITIONS  
INPUT  
OUTPUT  
STATUS  
L
H
L
H
H
H
Normal Operation  
L
H
H
L
X
X
H
Current Limitation  
(Tj < TTSD) H  
(Tj > TTSD) L  
L
H
L
L
H
L
Overtemperature  
Undervoltage  
Overvoltage  
L
H
L
L
X
X
L
H
L
L
H
H
5/22  
VN800S(8961) / VN800PT(8961)  
Figure 1: Peak Short Circuit Current Test Circuit  
+VCC  
10kΩ  
VCC  
STATUS  
INPUT  
RIN  
CONTROL  
UNIT  
OUTPUT  
GND  
RL=10mΩ  
GND  
Figure 2: Avalanche Energy Test Circuit  
+VCC  
10kΩ  
VCC  
STATUS  
INPUT  
CONTROL  
UNIT  
OUTPUT  
RIN  
GND  
LOAD  
GND  
6/22  
VN800S(8961) / VN800PT(8961)  
ELECTRICAL TRANSIENT REQUIREMENTS ON V PIN  
CC  
TEST LEVELS  
ISO T/R 7637/1  
Test Pulse  
Delays and  
Impedance  
I
II  
III  
IV  
1
2
-25 V  
+25 V  
-25 V  
-50 V  
+50 V  
-50 V  
+50 V  
-5 V  
-75 V  
+75 V  
-100 V  
+75 V  
-6 V  
-100 V  
+100 V  
-150 V  
+100 V  
-7 V  
2 ms 10 Ω  
0.2 ms 10 Ω  
0.1 µs 50 Ω  
0.1 µs 50 Ω  
100 ms, 0.01 Ω  
400 ms, 2 Ω  
3a  
3b  
4
+25 V  
-4 V  
5
+26.5 V  
+46.5 V  
+66.5 V  
+86.5 V  
ISO T/R 7637/1  
TEST LEVELS RESULTS  
I
II  
C
C
C
C
C
E
III  
C
C
C
C
C
E
IV  
C
C
C
C
C
E
Test Pulse  
1
2
C
C
C
C
C
C
3a  
3b  
4
5
CLASS  
CONTENTS  
C
E
All functions of the device are performed as designed after exposure to disturbance.  
One or more functions of the device is not performed as designed after exposure to disturbance  
and cannot be returned to proper operation without replacing the device.  
7/22  
VN800S(8961) / VN800PT(8961)  
APPLICATION SCHEMATIC  
V
CC  
VCC  
24VDC  
5V  
Volt.  
Reg  
Rprot  
STATUS  
D
id  
INPUT  
OUTPUT  
R
Rprot  
BUS  
ASIC  
LOAD  
GND  
L
DGND  
RGND  
VGND  
This small signal diode can be safely shared amongst  
several different HSD. Also in this case, the presence of  
the ground network will produce a shift (j 600mV) in the  
input threshold and the status output values if the  
microprocessor ground is not common with the device  
ground. This shift will not vary if more than one HSD  
shares the same diode/resistor network.  
GND PROTECTION NETWORK AGAINST  
REVERSE BATTERY  
Solution 1: Resistor in the ground line (RGND only). This  
can be used with any type of load.  
The following is an indication on how to dimension the  
RGND resistor.  
1) RGND ≤ 600mV / (IS(on)max).  
LOAD DUMP PROTECTION  
2) RGND ≥ (−VCC) / (-IGND  
)
Dld is necessary (Voltage Transient Suppressor) if the  
load dump peak voltage exceeds VCC max DC rating. The  
same applies if the device will be subject to transients on  
the VCC line that are greater than the ones shown in the  
ISO T/R 7637/1 table.  
where -IGND is the DC reverse ground pin current and can  
be found in the absolute maximum rating section of the  
device’s datasheet.  
Power Dissipation in RGND (when VCC<0: during reverse  
battery situations) is:  
PD= (-VCC)2/RGND  
This resistor can be shared amongst several different  
HSD. Please note that the value of this resistor should be  
calculated with formula (1) where IS(on)max becomes the  
sum of the maximum on-state currents of the different  
devices.  
µC I/Os PROTECTION:  
If a ground protection network is used and negative  
transients are present on the VCC line, the control pins will  
be pulled negative. ST suggests to insert a resistor (Rprot  
)
in line to prevent the µC I/Os pins to latch-up.  
The value of these resistors is a compromise between the  
leakage current of µC and the current required by the  
HSD I/Os (Input levels compatibility) with the latch-up limit  
of µC I/Os.  
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax  
Calculation example:  
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V  
5kΩ ≤ Rprot ≤ 65kΩ.  
Recommended Rprot value is 10kΩ.  
Please note that if the microprocessor ground is not  
common with the device ground then the RGND will  
produce a shift (IS(on)max * RGND) in the input thresholds  
and the status output values. This shift will vary  
depending on many devices are ON in the case of several  
high side drivers sharing the same RGND  
.
If the calculated power dissipation leads to a large resistor  
or several devices have to share the same resistor then  
the ST suggests to utilize Solution 2 (see below).  
Solution 2: A diode (DGND) in the ground line.  
A resistor (RGND=1kΩ) should be inserted in parallel to  
DGND if the device will be driving an inductive load.  
8/22  
VN800S(8961) / VN800PT(8961)  
Figure 3: Waveforms  
NORMAL OPERATION  
INPUT  
LOAD VOLTAGE  
STATUS  
UNDERVOLTAGE  
VUSDhyst  
VCC  
VUSD  
INPUT  
LOAD VOLTAGE  
STATUS  
undefined  
OVERVOLTAGE  
CC<VOV  
VCC>VOV  
V
VCC  
INPUT  
LOAD VOLTAGE  
STATUS  
OVERTEMPERATURE  
TTSD  
TR  
Tj  
INPUT  
LOAD CURRENT  
STATUS  
9/22  
VN800S(8961) / VN800PT(8961)  
High Level Input Current  
Off State Output Current  
IL(off1) (µA)  
Iih (µA)  
2.5  
8
2.25  
7
Off state  
2
1.75  
1.5  
1.25  
1
Vin=3.25V  
Vcc=36V  
Vin=Vout=0V  
6
5
4
3
2
1
0
0.75  
0.5  
0.25  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
175  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
Tc (ºC)  
Tc (ºC)  
I
Vs T  
Status Leakage Current  
LIM  
case  
Ilim (A)  
2.5  
Ilstat (µA)  
0.1  
2.25  
2
0.09  
Vstat=Vcc=36V  
Vcc=24V  
0.08  
Rl=10mOhm  
1.75  
1.5  
1.25  
1
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0
0.75  
0.5  
0.25  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
175  
-50  
-25  
0
25  
50  
75  
100 125 150  
175  
Tc (ºC)  
Tc (ºC)  
On State Resistance Vs T  
On State Resistance Vs V  
CC  
case  
Ron (mOhm)  
400  
Ron (mOhm)  
400  
350  
350  
300  
250  
200  
150  
100  
50  
Iout=0.5A  
Iout=0.5A  
Vcc=8V; 13V; 36V  
300  
250  
200  
150  
100  
50  
Tc= 150ºC  
Tc= 25ºC  
Tc= - 40ºC  
0
0
-50  
-25  
0
25  
50  
75  
100 125  
150  
175  
5
10  
15  
20  
25  
30  
35  
40  
Tc (ºC)  
Vcc (V)  
10/22  
VN800S(8961) / VN800PT(8961)  
Input High Level  
Input Low Level  
Vih (V)  
3.6  
Vil (V)  
2.6  
2.4  
3.4  
3.2  
3
2.2  
2
2.8  
1.8  
1.6  
1.4  
1.2  
2.6  
2.4  
2.2  
2
1
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
-50  
-25  
0
25  
50  
75  
100  
125 150  
175  
175  
175  
Tc (°C)  
Tc (°C)  
Input Hysteresis Voltage  
Overvoltage Shutdown  
Vov (V)  
50  
Vhyst (V)  
1.5  
48  
46  
44  
42  
40  
38  
36  
34  
32  
30  
1.4  
1.3  
1.2  
1.1  
1
0.9  
0.8  
0.7  
0.6  
0.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100 125  
150  
175  
Tc (°C)  
Tc (°C)  
Turn-on Voltage Slope  
Turn-off Voltage Slope  
dVout/dt(off) (V/ms)  
800  
dVout/dt(on) (V/ms)  
1600  
1
700  
1400  
Vcc=24V  
Rl=48Ohm  
Vcc=24V  
Rl=48Ohm  
600  
1200  
500  
400  
300  
200  
100  
0
1000  
800  
600  
400  
200  
0
-50  
-25  
0
25  
50  
75  
100 125  
150  
-50  
-25  
0
25  
50  
75  
100 125 150 175  
Tc (ºC)  
Tc (ºC)  
11/22  
VN800S(8961) / VN800PT(8961)  
PPAK Maximum turn off current versus load inductance  
ILMAX (A)  
10  
A
B
1
C
0.1  
1
10  
100  
1000  
L(mH)  
A = Single Pulse at T  
=150ºC  
Jstart  
B= Repetitive pulse at T =100ºC  
Jstart  
C= Repetitive Pulse at T  
=125ºC  
Jstart  
Conditions:  
V
=13.5V  
CC  
Values are generated with R =0Ω  
L
In case of repetitive pulses, T  
(at beginning of each demagnetization) of every pulse must not exceed  
jstart  
the temperature specified above for curves B and C.  
V , I  
IN  
L
Demagnetization  
Demagnetization  
Demagnetization  
t
12/22  
VN800S(8961) / VN800PT(8961)  
SO-8 Maximum turn off current versus load inductance  
LMAX (A)  
I
10  
A
B
1
C
0.1  
1
10  
100  
1000  
L(mH)  
A = Single Pulse at T  
=150ºC  
Jstart  
B= Repetitive pulse at T =100ºC  
Jstart  
C= Repetitive Pulse at T  
=125ºC  
Jstart  
Conditions:  
V
=13.5V  
CC  
Values are generated with R =0Ω  
L
In case of repetitive pulses, T  
(at beginning of each demagnetization) of every pulse must not exceed  
jstart  
the temperature specified above for curves B and C.  
V , I  
IN  
L
Demagnetization  
Demagnetization  
Demagnetization  
t
13/22  
VN800S(8961) / VN800PT(8961)  
SO-8 THERMAL DATA  
SO-8 PC Board  
Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,  
Cu thickness=35µm, Copper areas: 0.14cm2, 2cm2).  
R
Vs PCB copper area in open box free air condition  
thj-amb  
RTHj_amb (ºC/W)  
SO8 at 2 pins connected to TAB  
110  
105  
100  
95  
90  
85  
80  
75  
70  
0
0.5  
1
1.5  
2
2.5  
PCBCu heatsink area (cm^2)  
14/22  
VN800S(8961) / VN800PT(8961)  
PPAK THERMAL DATA  
PPAK PC Board  
Layout condition of Rth and Zth measurements (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm,  
Cu thickness=35µm, Copper areas: 0.44cm2, 8cm2).  
R
Vs PCB copper area in open box free air condition  
thj-amb  
(ºC/W)  
RTHj_amb  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0
2
4
6
8
10  
PCB Cu heatsink area (cm^2)  
15/22  
VN800S(8961) / VN800PT(8961)  
PPAK Thermal Impedance Junction Ambient Single Pulse  
ZTH (°C/W)  
1000  
2
100  
10  
1
0.44 cm  
2
6 cm  
0.1  
0.0001 0.001  
0.01  
0.1  
1
10  
100  
1000  
Time (s)  
Thermal fitting model of a single channel HSD  
in PPAK  
Pulse calculation formula  
ZTHδ = RTH δ + ZTHtp(1 – δ)  
δ = tp ⁄ T  
where  
Thermal Parameter  
Area/island (cm2)  
R1 (°C/W)  
0.44  
0.04  
0.25  
0.3  
6
Tj  
R2 (°C/W)  
C1  
R1  
C2  
R2  
C3  
R3  
C4  
R4  
C5  
R5  
C6  
R6  
R3 ( °C/W)  
R4 (°C/W)  
2
R5 (°C/W)  
15  
Pd  
R6 (°C/W)  
61  
24  
T_amb  
C1 (W.s/°C)  
C2 (W.s/°C)  
C3 (W.s/°C)  
C4 (W.s/°C)  
C5 (W.s/°C)  
C6 (W.s/°C)  
0.0008  
0.007  
0.02  
0.3  
0.45  
0.8  
5
16/22  
VN800S(8961) / VN800PT(8961)  
SO-8 Thermal Impedance Junction Ambient Single Pulse  
ZTH (°C/W)  
1000  
2
0.5 cm  
100  
10  
1
2
2 cm  
0.1  
0.0001 0.001  
0.01  
0.1  
1
10  
100  
1000  
Time (s)  
Thermal fitting model of a single channel HSD  
in SO-8  
Pulse calculation formula  
ZTHδ = RTH δ + ZTHtp(1 – δ)  
δ = tp ⁄ T  
where  
Thermal Parameter  
Area/island (cm2)  
R1 (°C/W)  
0.14  
0.24  
1.2  
2
28  
2
Tj  
R2 (°C/W)  
C1  
R1  
C2  
R2  
C3  
R3  
C4  
R4  
C5  
R5  
C6  
R6  
R3 ( °C/W)  
4.5  
R4 (°C/W)  
21  
R5 (°C/W)  
16  
Pd  
R6 (°C/W)  
58  
T_amb  
C1 (W.s/°C)  
C2 (W.s/°C)  
C3 (W.s/°C)  
C4 (W.s/°C)  
C5 (W.s/°C)  
C6 (W.s/°C)  
0.00015  
0.0005  
7.50E-03  
0.045  
0.35  
1.05  
17/22  
VN800S(8961) / VN800PT(8961)  
SO-8 MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
MAX.  
1.75  
0.25  
1.65  
0.85  
0.48  
0.25  
0.5  
MIN.  
MAX.  
0.068  
0.009  
0.064  
0.033  
0.018  
0.010  
0.019  
A
a1  
a2  
a3  
b
0.1  
0.003  
0.65  
0.35  
0.19  
0.25  
0.025  
0.013  
0.007  
0.010  
b1  
C
c1  
D
45 (typ.)  
4.8  
5.8  
5
0.188  
0.228  
0.196  
0.244  
E
6.2  
e
1.27  
3.81  
0.050  
0.150  
e3  
F
3.8  
0.4  
4
0.14  
0.157  
0.050  
0.023  
L
1.27  
0.6  
0.015  
M
S
8 (max.)  
L1  
0.8  
1.2  
0.031  
0.047  
18/22  
VN800S(8961) / VN800PT(8961)  
PPAK MECHANICAL DATA  
DIM.  
MIN.  
2.20  
0.90  
0.03  
0.40  
5.20  
0.45  
0.48  
TYP  
MAX.  
2.40  
1.10  
0.23  
0.60  
5.40  
0.60  
0.60  
A
A1  
A2  
B
B2  
C
C2  
D1  
5.1  
D
6.00  
6.40  
6.20  
6.60  
E
E1  
4.7  
e
1.27  
G
4.90  
2.38  
9.35  
5.25  
2.70  
10.10  
1.00  
1.00  
G1  
H
L2  
0.8  
0.2  
L4  
0.60  
0º  
R
V2  
8º  
Package Weight  
Gr. 0.3  
P032T1  
19/22  
VN800S(8961) / VN800PT(8961)  
SO-8 TUBE SHIPMENT (no suffix)  
B
Base Q.ty  
Bulk Q.ty  
100  
2000  
532  
3.2  
6
C
A
Tube length (± 0.5)  
A
B
C (± 0.1)  
0.6  
All dimensions are in mm.  
TAPE AND REEL SHIPMENT (suffix “13TR”)  
REEL DIMENSIONS  
Base Q.ty  
Bulk Q.ty  
A (max)  
B (min)  
C (± 0.2)  
F
2500  
2500  
330  
1.5  
13  
20.2  
12.4  
60  
G (+ 2 / -0)  
N (min)  
T (max)  
18.4  
All dimensions are in mm.  
TAPE DIMENSIONS  
According to Electronic Industries Association  
(EIA) Standard 481 rev. A, Feb 1986  
Tape width  
W
P0 (± 0.1)  
P
12  
4
Tape Hole Spacing  
Component Spacing  
Hole Diameter  
8
D (± 0.1/-0) 1.5  
Hole Diameter  
D1 (min)  
F (± 0.05)  
K (max)  
1.5  
5.5  
4.5  
2
Hole Position  
Compartment Depth  
Hole Spacing  
P1 (± 0.1)  
End  
All dimensions are in mm.  
Start  
Top  
Nocomponents  
500mm min  
Components  
No components  
cover  
tape  
Emptycomponents pockets  
saled with cover tape.  
500mm min  
User directionof feed  
20/22  
VN800S(8961) / VN800PT(8961)  
PPAK TUBE SHIPMENT (no suffix)  
A
C
Base Q.ty  
75  
3000  
532  
6
Bulk Q.ty  
Tube length (± 0.5)  
A
B
B
21.3  
0.6  
C (± 0.1)  
All dimensions are in mm.  
TAPE AND REEL SHIPMENT (suffix “13TR”)  
REEL DIMENSIONS  
Base Q.ty  
2500  
2500  
330  
1.5  
Bulk Q.ty  
A (max)  
B (min)  
C (± 0.2)  
F
13  
20.2  
16.4  
60  
G (+ 2 / -0)  
N (min)  
T (max)  
22.4  
All dimensions are in mm.  
TAPE DIMENSIONS  
According to Electronic Industries Association  
(EIA) Standard 481 rev. A, Feb 1986  
Tape width  
W
P0 (± 0.1)  
P
16  
4
Tape Hole Spacing  
Component Spacing  
Hole Diameter  
8
D (± 0.1/-0) 1.5  
Hole Diameter  
D1 (min)  
F (± 0.05)  
K (max)  
1.5  
7.5  
6.5  
2
Hole Position  
Compartment Depth  
Hole Spacing  
P1 (± 0.1)  
End  
All dimensions are in mm.  
Start  
Top  
cover  
tape  
No components  
500mmmin  
Components  
No components  
Empty components pockets  
saledwithcover tape.  
500mmmin  
Userdirection offeed  
21/22  
1
VN800S(8961) / VN800PT(8961)  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approvalof STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
2002 STMicroelectronics - Printed in ITALY- All Rights Reserved.  
STMicroelectronics GROUP OF COMPANIES  
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Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
22/22  

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