VN800PT(8961)13TR [STMICROELECTRONICS]
BUF OR INV BASED PRPHL DRVR, PSSO4, PPAK-5;型号: | VN800PT(8961)13TR |
厂家: | ST |
描述: | BUF OR INV BASED PRPHL DRVR, PSSO4, PPAK-5 驱动 接口集成电路 驱动器 |
文件: | 总17页 (文件大小:175K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VN800S(8961)
/ VN800PT(8961)
HIGH SIDE DRIVER
TYPE
RDS(on)
IOUT
VCC
VN800S(8961)
VN800PT(8961)
135 mΩ
1.2 A
36 V
■ CMOS COMPATIBLE INPUT
■ THERMAL SHUTDOWN
■ CURRENT LIMITATION
■ SHORTED LOAD PROTECTION
■ UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
SO-8
ORDER CODES:
PPAK
■ PROTECTION AGAINST LOSS OF GROUND
■ VERY LOW STAND-BY CURRENT
SO-8
PPAK
VN800S(8961)
VN800PT(8961)
■ REVERSE BATTERY PROTECTION (*)
DESCRIPTION
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protect the device against overload.
Device automatically turns off in case of ground
pin disconnection.
The VN800S(8961), VN800PT(8961) are
monolithic
devices
made
by
using
STMicroelectronics VIPower M0-3 Technology,
intended for driving any kind of load with one side
connected to ground.
Active V pin voltage clamp protects the device
CC
against low energy spikes (see ISO7637 transient
BLOCK DIAGRAM
V
CC
OVERVOLTAGE
DETECTION
V
CC
CLAMP
UNDERVOLTAGE
DETECTION
GND
Power CLAMP
DRIVER
OUTPUT
LOGIC
INPUT
CURRENT LIMITER
STATUS
OVERTEMPERATURE
DETECTION
(*) See note at page 8
April 2002
1/17
1
VN800S(8961) / VN800PT(8961)
ABSOLUTE MAXIMUM RATING
Value
Symbol
Parameter
Unit
SO-8
PPAK
VCC
- VCC
- IGND
IOUT
- IOUT
IIN
DC Supply Voltage
41
V
V
Reverse DC Supply Voltage
DC Reverse Ground Pin Current
DC Output Current
- 0.3
- 200
mA
A
Internally Limited
- 6
Reverse DC Output Current
DC Input Current
A
+/- 10
mA
V
VIN
Input Voltage Range
-3/+VCC
+ VCC
VSTAT
DC Status Voltage
V
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
4000
4000
5000
5000
V
V
VESD
- STATUS
- OUTPUT
V
- VCC
V
Ptot
Tj
Power Dissipation TC=25°C
Junction Operating Temperature
Case Operating Temperature
Storage Temperature
4.2
42
W
°C
°C
°C
Internally Limited
- 40 to 150
Tc
Tstg
- 55 to 150
Max Inductive Load (VCC=30V; RLOAD=48Ω; Tamb=100°C;
Rthcase>ambient≤25°C/W)
Lmax
2
H
CONNECTION DIAGRAM (TOP VIEW)
VCC
5
4
OUTPUT
STATUS
VCC
N.C.
5
4
STATUS
INPUT
GND
OUTPUT
OUTPUT
VCC
3
2
INPUT
GND
1
8
1
SO-8
PPAK
CURRENT AND VOLTAGE CONVENTIONS
I
CC
I
IN
VCC
GND
INPUT
I
STAT
I
OUT
V
STATUS
OUTPUT
CC
V
IN
V
OUT
V
STAT
I
GND
2/17
1
VN800S(8961) / VN800PT(8961)
THERMAL DATA
Symbol
Value
Unit
Parameter
SO-8
-
PPAK
Rthj-case
Rthj-lead
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-lead
Max
Max
Max
3
-
°C/W
°C/W
°C/W
30
Thermal Resistance Junction-ambient
80 (*)
53 (**)
2
(*) When mounted on FR4 printed circuit board with 0.5 cm of copper area (at least 35µ thick) connected to all V pins.
CC
2
(**) When mounted on FR4 printed circuit board with 0.5 cm of copper area (at least 35µ thick).
ELECTRICAL CHARACTERISTICS (8V<V <36V; -40°C<T<150°C, unless otherwise specified)
CC
j
POWER
Symbol
VCC
Parameter
Test Conditions
Min
5.5
3
Typ
Max
36
Unit
V
Operating Supply Voltage
Undervoltage Shut-down
Overvoltage Shut-down
VUSD
VOV
4
5.5
V
36
V
IOUT =0.5A; Tj=25°C
135
270
20
mΩ
mΩ
µA
mA
mA
RON
On State Resistance
IOUT=0.5A
Off State; VCC=24V; Tcase=25°C
On State; VCC=24V
10
IS
Supply Current
1.5
3.5
2.6
On State; VCC=24V; Tcase=100°C
VCC=VSTAT=VIN=VGND=24V
VOUT=0V
ILGND
Output Current at turn-off
1
mA
IL(off1)
IL(off2)
IL(off3)
Off State Output Current
Off State Output Current
Off State Output Current
VIN=VOUT=0V
0
50
5
µA
µA
µA
VIN=VOUT=0V; Vcc=13V; Tj =125°C
VIN=VOUT=0V; Vcc=13V; Tj =25°C
3
SWITCHING (V =24V)
CC
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
RL=48Ω from VIN rising edge to
td(on)
Turn-on Delay Time
Turn-off Delay Time
10
µs
V
OUT=2.4V
RL=48Ω from VIN falling edge to
VOUT=21.6V
td(off)
40
µs
See
relative
diagram
dVOUT
dt(on)
/
/
RL=48Ω from VOUT=2.4V to
VOUT=19.2V
Turn-on Voltage Slope
Turn-off Voltage Slope
V/µs
See
relative
diagram
dVOUT
dt(off)
RL=48Ω from VOUT=21.6V to
V/µs
V
OUT=2.4V
INPUT PIN
Symbol
VINL
IINL
Parameter
Input Low Level
Test Conditions
Min
Typ
Max
Unit
V
1.25
Low Level Input Current
Input High Level
VIN=1.25V
VIN=3.25V
1
µA
V
VINH
IINH
3.25
High Level Input Current
Input Hysteresis Voltage
Input Current
10
µA
V
VI(hyst)
IIN
0.5
VIN=VCC=36V
200
µA
3/17
1
VN800S(8961) / VN800PT(8961)
ELECTRICAL CHARACTERISTICS (continued)
STATUS PIN
Symbol
VSTAT
Parameter
Test Conditions
Min
Typ
Max
0.5
10
Unit
V
Status Low Output Voltage ISTAT=1.6 mA
ILSTAT
Status Leakage Current
Normal Operation; VSTAT=VCC=36 V
µA
Status Pin Input
Capacitance
CSTAT
Normal Operation; VSTAT= 5V
30
pF
PROTECTIONS
Symbol
Parameter
Test Conditions
Min
150
135
7
Typ
Max
Unit
°C
TTSD
TR
Shut-down Temperature
Reset Temperature
Thermal Hysteresis
175
200
°C
Thyst
15
°C
Status Delay in Overload
Condition
TSDL
Ilim
Tj>T
20
2
µs
A
jsh
DC Short Circuit Current
Turn-off Output Clamp
Voltage
VCC=16V; RLOAD=10mΩ
1.2
Vdemag
IOUT=0.5 A; L=6mH
VCC-47 VCC-52 VCC-57
V
OVERTEMP STATUS TIMING
Tj>Tjsh
VIN
VSTAT
tSDL
tSDL
4/17
2
1
VN800S(8961) / VN800PT(8961)
Switching time Waveforms
VOUT
90%
80%
tr
dVOUT/dt(off)
dVOUT/dt(on)
10%
tf
t
VIN
td(on)
td(off)
t
TRUTH TABLE
CONDITIONS
INPUT
OUTPUT
STATUS
L
H
L
H
H
H
Normal Operation
L
H
H
L
X
X
H
Current Limitation
(Tj < TTSD) H
(Tj > TTSD) L
L
H
L
L
H
L
Overtemperature
Undervoltage
Overvoltage
L
H
L
L
X
X
L
H
L
L
H
H
5/17
1
VN800S(8961) / VN800PT(8961)
Figure 1: Peak Short Circuit Current Test Circuit
+VCC
10kΩ
VCC
STATUS
INPUT
RIN
CONTROL
UNIT
OUTPUT
GND
RL=10mΩ
GND
Figure 2: Avalanche Energy Test Circuit
+VCC
10kΩ
VCC
STATUS
INPUT
CONTROL
UNIT
OUTPUT
RIN
GND
LOAD
GND
6/17
1
VN800S(8961) / VN800PT(8961)
ELECTRICAL TRANSIENT REQUIREMENTS ON V PIN
CC
TEST LEVELS
ISO T/R 7637/1
Test Pulse
Delays and
Impedance
I
II
III
IV
1
2
-25 V
+25 V
-25 V
-50 V
+50 V
-50 V
+50 V
-5 V
-75 V
+75 V
-100 V
+75 V
-6 V
-100 V
+100 V
-150 V
+100 V
-7 V
2 ms 10 Ω
0.2 ms 10 Ω
0.1 µs 50 Ω
0.1 µs 50 Ω
100 ms, 0.01 Ω
400 ms, 2 Ω
3a
3b
4
+25 V
-4 V
5
+26.5 V
+46.5 V
+66.5 V
+86.5 V
ISO T/R 7637/1
TEST LEVELS RESULTS
I
II
C
C
C
C
C
E
III
C
C
C
C
C
E
IV
C
C
C
C
C
E
Test Pulse
1
2
C
C
C
C
C
C
3a
3b
4
5
CLASS
CONTENTS
C
E
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure to disturbance
and cannot be returned to proper operation without replacing the device.
7/17
1
VN800S(8961) / VN800PT(8961)
APPLICATION SCHEMATIC
V
CC
VCC
24VDC
5V
Volt.
Reg
Rprot
STATUS
D
id
INPUT
OUTPUT
R
Rprot
BUS
ASIC
LOAD
GND
L
DGND
RGND
VGND
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (j 600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
GND PROTECTION NETWORK AGAINST
REVERSE BATTERY
Solution 1: Resistor in the ground line (RGND only). This
can be used with any type of load.
The following is an indication on how to dimension the
RGND resistor.
1) RGND ≤ 600mV / (IS(on)max).
LOAD DUMP PROTECTION
2) RGND ≥ (−VCC) / (-IGND
)
Dld is necessary (Transil or MOV) if the load dump peak
voltage exceeds VCC max DC rating. The same applies if
the device will be subject to transients on the VCC line that
are greater than the ones shown in the ISO T/R 7637/1
table.
where -IGND is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in RGND (when VCC<0: during reverse
battery situations) is:
PD= (-VCC)2/RGND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where IS(on)max becomes the
sum of the maximum on-state currents of the different
devices.
µC I/Os PROTECTION:
If a ground protection network is used and negative
transients are present on the VCC line, the control pins will
be pulled negative. ST suggests to insert a resistor (Rprot
)
in line to prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up limit
of µC I/Os.
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
5kΩ ≤ Rprot ≤ 65kΩ.
Recommended Rprot value is 10kΩ.
Please note that if the microprocessor ground is not
common with the device ground then the RGND will
produce a shift (IS(on)max * RGND) in the input thresholds
and the status output values. This shift will vary
depending on many devices are ON in the case of several
high side drivers sharing the same RGND
.
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggests to utilize Solution 2 (see below).
Solution 2: A diode (DGND) in the ground line.
A resistor (RGND=1kΩ) should be inserted in parallel to
DGND if the device will be driving an inductive load.
8/17
1
VN800S(8961) / VN800PT(8961)
Figure 3: Waveforms
NORMAL OPERATION
INPUT
LOAD VOLTAGE
STATUS
UNDERVOLTAGE
VUSDhyst
VCC
VUSD
INPUT
LOAD VOLTAGE
STATUS
undefined
OVERVOLTAGE
CC<VOV
VCC>VOV
V
VCC
INPUT
LOAD VOLTAGE
STATUS
OVERTEMPERATURE
TTSD
TR
Tj
INPUT
LOAD CURRENT
STATUS
9/17
1
1
VN800S(8961) / VN800PT(8961)
High Level Input Current
Off State Output Current
IL(off1) (µA)
Iih (µA)
2.5
8
2.25
7
Off state
2
1.75
1.5
1.25
1
Vin=3.25V
Vcc=36V
Vin=Vout=0V
6
5
4
3
2
1
0
0.75
0.5
0.25
0
-50
-25
0
25
50
75
100 125 150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (ºC)
Tc (ºC)
I
Vs T
Status Leakage Current
LIM
case
Ilim (A)
2.5
Ilstat (µA)
0.1
2.25
2
0.09
Vstat=Vcc=36V
Vcc=24V
0.08
Rl=10mOhm
1.75
1.5
1.25
1
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.75
0.5
0.25
0
-50
-25
0
25
50
75
100 125 150
175
-50
-25
0
25
50
75
100 125 150
175
Tc (ºC)
Tc (ºC)
On State Resistance Vs T
On State Resistance Vs V
CC
case
Ron (mOhm)
400
Ron (mOhm)
400
350
350
300
250
200
150
100
50
Iout=0.5A
Iout=0.5A
Vcc=8V; 13V; 36V
300
250
200
150
100
50
Tc= 150ºC
Tc= 25ºC
Tc= - 40ºC
0
0
-50
-25
0
25
50
75
100 125
150
175
5
10
15
20
25
30
35
40
Tc (ºC)
Vcc (V)
10/17
1
VN800S(8961) / VN800PT(8961)
Input High Level
Input Low Level
Vih (V)
3.6
Vil (V)
2.6
2.4
3.4
3.2
3
2.2
2
2.8
1.8
1.6
1.4
1.2
2.6
2.4
2.2
2
1
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125 150
175
175
175
Tc (°C)
Tc (°C)
Input Hysteresis Voltage
Overvoltage Shutdown
Vov (V)
50
Vhyst (V)
1.5
48
46
44
42
40
38
36
34
32
30
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125
150
175
Tc (°C)
Tc (°C)
Turn-on Voltage Slope
Turn-off Voltage Slope
dVout/dt(off) (V/ms)
800
dVout/dt(on) (V/ms)
1600
1
700
1400
Vcc=24V
Rl=48Ohm
Vcc=24V
Rl=48Ohm
600
1200
500
400
300
200
100
0
1000
800
600
400
200
0
-50
-25
0
25
50
75
100 125
150
-50
-25
0
25
50
75
100 125 150 175
Tc (ºC)
Tc (ºC)
11/17
VN800S(8961) / VN800PT(8961)
SO-8 THERMAL DATA
SO-8 PC Board
Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,
Cu thickness=35µm, Copper areas: 0.14cm2, 0.8cm2, 2cm2).
R
Vs PCB copper area
thj-amb
SO8 at 2 leads connected to the
RTH vs PCB Cupper
RTH j-amb (°C/W)
105
100
95
90
85
80
75
70
0
0,5
1
1,5
2
2,5
PCB Cu heatsink area (cm^2)
12/17
VN800S(8961) / VN800PT(8961)
SO-8 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5
0.188
0.228
0.196
0.244
E
6.2
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4
0.14
0.157
0.050
0.023
L
1.27
0.6
0.015
M
S
8 (max.)
L1
0.8
1.2
0.031
0.047
13/17
VN800S(8961) / VN800PT(8961)
PPAK MECHANICAL DATA
DIM.
MIN.
2.20
0.90
0.03
0.40
5.20
0.45
0.48
TYP
MAX.
2.40
1.10
0.23
0.60
5.40
0.60
0.60
A
A1
A2
B
B2
C
C2
D1
5.1
D
6.00
6.40
6.20
6.60
E
E1
4.7
e
1.27
G
4.90
2.38
9.35
5.25
2.70
10.10
1.00
1.00
G1
H
L2
0.8
0.2
L4
0.60
0º
R
V2
8º
Package Weight
Gr. 0.3
P032T1
14/17
VN800S(8961) / VN800PT(8961)
SO-8 TUBE SHIPMENT (no suffix)
B
Base Q.ty
Bulk Q.ty
100
2000
532
3.2
6
C
A
Tube length (± 0.5)
A
B
C (± 0.1)
0.6
All dimensions are in mm.
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
2500
2500
330
1.5
13
20.2
12.4
60
G (+ 2 / -0)
N (min)
T (max)
18.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
W
P0 (± 0.1)
P
12
4
Tape Hole Spacing
Component Spacing
Hole Diameter
8
D (± 0.1/-0) 1.5
Hole Diameter
D1 (min)
F (± 0.05)
K (max)
1.5
5.5
4.5
2
Hole Position
Compartment Depth
Hole Spacing
P1 (± 0.1)
End
All dimensions are in mm.
Start
Top
Nocomponents
500mm min
Components
No components
cover
tape
Emptycomponents pockets
saled with cover tape.
500mm min
User directionof feed
15/17
1
VN800S(8961) / VN800PT(8961)
PPAK TUBE SHIPMENT (no suffix)
A
C
Base Q.ty
75
3000
532
6
Bulk Q.ty
Tube length (± 0.5)
A
B
B
21.3
0.6
C (± 0.1)
All dimensions are in mm.
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
2500
2500
330
1.5
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
13
20.2
16.4
60
G (+ 2 / -0)
N (min)
T (max)
22.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
W
P0 (± 0.1)
P
16
4
Tape Hole Spacing
Component Spacing
Hole Diameter
8
D (± 0.1/-0) 1.5
Hole Diameter
D1 (min)
F (± 0.05)
K (max)
1.5
7.5
6.5
2
Hole Position
Compartment Depth
Hole Spacing
P1 (± 0.1)
End
All dimensions are in mm.
Start
Top
cover
tape
No components
500mmmin
Components
No components
Empty components pockets
saledwithcover tape.
500mmmin
Userdirection offeed
16/17
1
1
VN800S(8961) / VN800PT(8961)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approvalof STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2002 STMicroelectronics - Printed in ITALY- All Rights Reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia -
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
17/17
相关型号:
©2020 ICPDF网 联系我们和版权申明