STP35NF10 [STMICROELECTRONICS]
N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET; N沟道100V - 0.030ohm - 40A TO- 220 / D2PAK低栅电荷STripFET⑩功率MOSFET
| 型号： | STP35NF10 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
| 文件： | 总10页 (文件大小：468K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP35NF10
STB35NF10
N-CHANNEL 100V - 0.030Ω - 40A TO-220 / D2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STP35NF10
STB35NF10
100 V
100 V
< 0.035 Ω
< 0.035 Ω
40 A
40 A
■
■
■
■
TYPICAL R (on) = 0.030Ω
DS
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
3
1
3
2
1
2
TO-220
D PAK
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH-EFFICIENCY DC-DC CONVERTERS
■
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
100
100
±20
40
Unit
V
DS
Drain-source Voltage (V = 0)
V
V
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuous) at T = 25°C
A
D
C
I
Drain Current (continuous) at T = 100°C
28
A
D
C
I
( )
Drain Current (pulsed)
160
115
0.77
13
A
DM
P
Total Dissipation at T = 25°C
W
TOT
C
Derating Factor
W/°C
V/ns
mJ
dv/dt (1)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
E
(2)
300
AS
T
stg
– 55 to 175
°C
T
Operating Junction Temperature
j
(1) I ≤35A, di/dt ≤300A/µs, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
(●) Pulse width limited by safe operating area
(2) Starting T = 25°C, I = 20A, V = 80V
j
D
DD
April 2003
1/10
STP35NF10 - STB35NF10
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
1.30
62.5
300
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
T
Maximum Lead Temperature For Soldering Purpose
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 250 µA, V = 0
100
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
DS
1
µA
µA
nA
DSS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
10
DS
GS
C
I
Gate-body Leakage
= ±20V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
R
V
V
= V , I = 250µA
Gate Threshold Voltage
2
GS(th)
DS
GS
GS
D
Static Drain-source On
Resistance
= 10V, I = 17.5 A
0.030
0.035
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Forward Transconductance
Input Capacitance
Test Conditions
Min.
Typ.
20
Max.
Unit
S
g
(1)
V
= 15V I = 17.5 A
DS , D
fs
C
C
V
= 25V, f = 1 MHz, V = 0
DS GS
1550
220
95
pF
pF
pF
iss
Output Capacitance
oss
C
rss
Reverse Transfer
Capacitance
2/10
STP35NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 50V, I = 17.5 A
Turn-on Delay Time
17
ns
d(on)
DD
D
= 4.7Ω V = 10V
G
GS
t
Rise Time
60
ns
r
(see test circuit, Figure 3)
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V = 80V, I =35A,V = 10V
55
12
20
nC
nC
nC
g
DD
D
GS
Q
gs
gd
Q
SWITCHING OFF
Symbol
Parameter
Test Conditions
= 50V, I = 17.5 A,
R = 4.7Ω, V = 10V
G GS
Min.
Min.
Typ.
Max.
Unit
t
Turn-off-Delay Time
Fall Time
V
DD
60
15
ns
ns
d(off)
D
t
f
(see test circuit, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
40
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
160
1.5
A
SDM
V
I
I
= 35 A, V = 0
V
SD
SD
SD
GS
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
160
720
9
ns
nC
A
= 35 A, di/dt = 100A/µs,
= 25V, T = 150°C
rr
Q
V
rr
RRM
DD
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
3/10
STP35NF10 - STB35NF10
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/10
STP35NF10
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/10
STP35NF10 - STB35NF10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/10
STP35NF10
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
7/10
STP35NF10 - STB35NF10
D2PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
4.4
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
8º
3
8/10
1
STP35NF10
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
9/10
STP35NF10 - STB35NF10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
10/10
相关型号：
STP36NF03L
N-CHANNEL 30V - 0.015 ohm - 36A TO-220 LOW GATE CHARGE STripFET POWER MOSFET
STMICROELECTR
STP36NF06L
N-channel 60V - 0.032ohm - 30A - TO-220 - D2PAK STripFET TM II Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明