STP36NF03L [STMICROELECTRONICS]
N-CHANNEL 30V - 0.015 ohm - 36A TO-220 LOW GATE CHARGE STripFET POWER MOSFET; N沟道30V - 0.015欧姆 - 36A TO- 220低栅电荷的STripFET功率MOSFET
| 型号： | STP36NF03L |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 30V - 0.015 ohm - 36A TO-220 LOW GATE CHARGE STripFET POWER MOSFET |
| 文件： | 总6页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP36NF03L
N-CHANNEL 30V - 0.015
Ω - 36A TO-220
LOW GATE CHARGE STripFET POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STP36NF03L
30 V
< 0.02 Ω
36 A
■
■
■
■
■
TYPICAL RDS(on) = 0.015 Ω
TYPICAL Qg = 18 nC @ 10V
OPTIMAL RDS(on) x Qg TRADE-OFF
CONDUCTION LOSSESREDUCED
SWITCHING LOSSESREDUCED
3
DESCRIPTION
2
1
This application specific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size ” strip-based process. The resul-
ting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in termsof both conductionand
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
SPECIFICALLYDESIGNED AND
OPTIMISED FOR HIGH EFFICIENCY CPU
CORE DC/DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
Parameter
Value
30
Unit
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
V
V
30
20
V
±
o
Drain Current (continuous) at Tc = 25 C
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
36
A
ID
25
144
A
I
DM(• )
A
o
Ptot
Total Dissipation at Tc = 25 C
75
W
Derating Factor
0.5
W/oC
oC
oC
Tstg
Tj
Storage Temperature
-65 to 175
175
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/6
January 2000
STP36NF03L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
2
62.5
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
(Tcase = 25 oC unless otherwisespecified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
Parameter
Test Conditions
ID = 250 µA VGS = 0
Min.
Typ.
Max.
Unit
V(BR)DSS Drain-source
30
V
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
IDSS
IGSS
VDS = Max Rating
1
10
µA
A
µ
o
Tc =125 C
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 100
nA
ON ( )
Symbol
VGS(th)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Gate Threshold Voltage VDS = VGS ID = 250 µA
1
2.5
V
RDS(on)
Static Drain-source On VGS = 10V
Resistance VGS = 5V
ID = 18 A
ID = 9 A
0.015 0.020
0.026 0.035
Ω
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
36
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID =18 A
Min.
Typ.
Max.
Unit
gfs ( )
20
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
750
270
60
pF
pF
pF
2/6
STP36NF03L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V
RG = 4.7
ID = 18 A
VGS = 4.5 V
16
200
ns
ns
Ω
(Resistive Load, see fig. 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 24 V ID = 32 A VGS = 10 V
18
3
5
21
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 15 V
RG = 4.7
ID = 18 A
VGS = 4.5 V
35
40
ns
ns
Ω
(Resistive Load, see fig. 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (• )
Source-drain Current
Source-drain Current
(pulsed)
36
144
A
A
VSD ( ) Forward On Voltage
ISD =36 A VGS = 0
1.5
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 36 A
VDD = 15 V
(see test circuit, fig. 5)
di/dt = 100 A/ s
38
30
ns
µ
Tj = 150 oC
Qrr
nC
A
IRRM
1.6
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
µ
(•) Pulse width limited by safe operating area
3/6
STP36NF03L
Fig. 1:
Fig. 2:
UnclampedInductive Waveform
Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
4/6
STP36NF03L
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
5/6
STP36NF03L
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of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all informaiton previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
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