STP36NF06 [STMICROELECTRONICS]
N-CHANNEL 60V - 0.032 - 30A TO-220/TO-220FP STripFET II POWER MOSFET; N沟道60V - 0.032 - 30A TO- 220 / TO- 220FP的STripFET II功率MOSFET
| 型号： | STP36NF06 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 60V - 0.032 - 30A TO-220/TO-220FP STripFET II POWER MOSFET |
| 文件： | 总9页 (文件大小：389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP36NF06
STP36NF06FP
N-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP
STripFET™ II POWER MOSFET
V
R
I
D
TYPE
DSS
DS(on)
STP36NF06
STP36NF06FP
60 V
60 V
<0.040 Ω
<0.040 Ω
30 A
18 A(*)
■
■
■
■
TYPICAL R (on) = 0.032 Ω
DS
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
3
3
2
2
1
1
TO-220
TO-220FP
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore
a
INTERNAL SCHEMATIC DIAGRAM
remarkable manufacturing reproducibility.
APPLICATIONS
■
HIGH CURRENT, HIGH SWITCHING SPEED
Ordering Information
SALES TYPE
STP36NF06
STP36NF06FP
MARKING
STP36NF06
STP36NF06FP
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP36NF06
STP36NF06FP
V
Drain-source Voltage (V = 0)
GS
60
60
V
V
DS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
GS
Gate- source Voltage
± 20
V
I
I
Drain Current (continuous) at T = 25°C
30
21
18(*)
12
A
A
D
C
Drain Current (continuous) at T = 100°C
D
C
I
(•)
Drain Current (pulsed)
120
70
72
25
A
W
DM
P
Total Dissipation at T = 25°C
tot
C
Derating Factor
0.47
0.17
W/°C
V/ns
mJ
(1)
(2)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
20
200
dv/dt
E
AS
T
stg
-55 to 175
°C
T
Max. Operating Junction Temperature
j
(•) Pulse width limited by safe operating area.
(*) Current Limited by Package
(1) I ≤36A, di/dt ≤400A/µs, V ≤ V
, T ≤ T
SD
DD
(BR)DSS j JMAX
o
(2) Starting T = 25 C, I = 18 A, V = 45V
j
D
DD
October 2003
1/9
STP36NF06 STP36NF06FP
THERMAL DATA
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case
Max
2.14
6
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case, for 10 sec)
62.5
300
°C/W
°C
Max
T
l
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
I
= 250 µA, V = 0
60
V
D
GS
V
(BR)DSS
Breakdown Voltage
V
= Max Rating
DS
Zero Gate Voltage
1
10
µA
µA
I
DSS
Drain Current (V = 0)
V
DS
= Max Rating T = 125°C
GS
C
Gate-body Leakage
V
GS
= ± 20 V
±100
nA
I
GSS
Current (V = 0)
DS
(*)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
V
GS(th)
V
V
= V
I
= 250 µA
I = 15 A
D
Gate Threshold Voltage
2
DS
GS
GS
D
= 10 V
Static Drain-source On
Resistance
0.032
0.040
Ω
R
DS(on)
DYNAMIC
Symbol
Parameter
Test Conditions
= 25 V = 15 A
Min.
Typ.
Max.
Unit
(*)
V
V
I
D
g
fs
Forward Transconductance
12
S
DS
DS
C
= 25V f = 1 MHz V = 0
GS
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
690
170
68
pF
pF
pF
iss
C
oss
C
rss
2/9
STP36NF06 STP36NF06FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
= 30 V = 18 A
Min.
Typ.
Max.
Unit
V
R
I
D
t
Turn-on Delay Time
Rise Time
10
40
ns
ns
DD
d(on)
= 4.7 Ω
V
= 10 V
GS
t
r
G
(Resistive Load, Figure 3)
Q
V = 30 V I = 36 A V = 10V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
23
6
9
31
nC
nC
nC
g
DD
D
GS
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
= 30 V = 18 A
Min.
Min.
Typ.
Max.
Unit
V
R
I
D
Turn-off Delay Time
Fall Time
27
9
ns
ns
t
DD
d(off)
= 4.7 Ω
V
=10 V
GS
t
G
f
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
30
120
A
A
SD
( )
•
I
SDM
(*)
I
I
= 30 A
V
= 0
GS
V
Forward On Voltage
1.5
V
SD
SD
SD
t
= 30 A
= 30 V
di/dt = 100A/µs
T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
65
155
4.8
ns
nC
A
rr
Q
V
rr
DD
j
I
(see test circuit, Figure 5)
RRM
(*)
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
•)Pulse width limited by safe operating area.
Safe Operating Area for TO-220FP
Safe Operating Area for TO-220
3/9
STP36NF06 STP36NF06FP
Thermal Impedance
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP36NF06 STP36NF06FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
5/9
STP36NF06 STP36NF06FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Fig. 4: Gate Charge test Circuit
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP36NF06 STP36NF06FP
TO-220FP MECHANICAL DATA
mm
inch
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
TYP.
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
7/9
STP36NF06 STP36NF06FP
TO-220 MECHANICAL DATA
mm.
inch.
TYP.
DIM.
MIN.
TYP.
MAX.
4.6
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
TYP.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
A
C
4.4
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
D
E
F
F1
F2
G
G1
H2
L2
L3
L4
L5
L6
L7
L9
DIA
16.40
28.90
0.645
1.137
13
14
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
2.65
15.25
6.20
3.50
3.75
2.95
15.75
6.60
3.93
3.85
8/9
STP36NF06 STP36NF06FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2003 STMicroelectronics - All Rights Reserved
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9/9
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