STP36NE06FP [STMICROELECTRONICS]
N - CHANNEL 60V - 0.032ohm - 36A - TO-220/TO-220FP STripFET POWER MOSFET; N - CHANNEL 60V - 0.032ohm - 36A - TO- 220 / TO- 220FP的STripFET功率MOSFET
| 型号： | STP36NE06FP |
| 厂家： | 
ST |
| 描述： | N - CHANNEL 60V - 0.032ohm - 36A - TO-220/TO-220FP STripFET POWER MOSFET |
| 文件： | 总9页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP36NE06
STP36NE06FP
N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FP
STripFET POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP36NE06
STP36NE06FP
60 V
60 V
< 0.040 Ω
< 0.040 Ω
36 A
20 A
■
■
■
■
■
TYPICAL RDS(on) = 0.032 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100 oC
APPLICATION ORIENTED
CHARACTERIZATION
3
3
2
2
1
1
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size
TO-220
TO-220FP
”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturingreproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP36NE06 STP36NE06FP
Unit
VDS
VDGR
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
60
60
V
V
± 20
V
Drain Current (continuous) at Tc = 25 oC
36
24
20
14
A
o
ID
Drain Current (continuous) at Tc = 100 C
A
I
DM(• )
Drain Current (pulsed)
144
100
0.66
144
35
A
o
Ptot
Total Dissipation at Tc = 25 C
W
W/oC
Derating Factor
0.27
2000
VISO
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
V
dv/dt
Tstg
Tj
7
V/ns
oC
oC
-65 to 175
175
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(1) ISD ≤ 36 A,di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, T ≤ TJMAX
j
1/9
July 1998
STP36NE06FP
THERMAL DATA
TO-220
TO-220FP
Rthj-case Thermal Resistance Junction-case
Max
1.51
4.28
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
62.5
0.5
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
36
A
EAS
Single Pulse Avalanche Energy
180
mJ
(starting Tj = 25 oC, ID = IAR, VDD = 25V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Parameter
Test Conditions
ID = 250 µA VGS = 0
Min.
Typ.
Max.
Unit
60
V
IDSS
VDS = Max Rating
1
10
µA
µA
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125
oC
IGSS
Gate-body Leakage
Current (VDS = 0)
± 100
nA
VGS = ± 20 V
ON ( )
Symbol
Parameter
Test Conditions
VDS = VGS ID = 250 µA
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
2
3
4
V
RDS(on)
ID(on)
Static Drain-source On VGS = 10V ID = 18 A
Resistance
0.032
0.04
Ω
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
36
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID =18 A
Min.
Typ.
Max.
Unit
gfs ( )
7
15
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
2115
260
65
2800
350
90
pF
pF
pF
2/9
STP36NE06FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Rise Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 30 V
RG =4.7Ω
ID = 18 A
VGS = 10 V
28
85
40
115
ns
ns
(di/dt)on Turn-on Current Slope VDD = 48 V
ID = 36 A
250
A/µs
RG = 4.7 Ω
VGS =10 V
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 48 V ID = 36 A VGS = 10 V
50
13
18
70
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 48 V ID = 36 A
RG =4.7 Ω VGS = 10 V
12
25
40
16
35
55
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(• )
Source-drain Current
Source-drain Current
(pulsed)
36
144
A
A
VSD ( ) Forward On Voltage
ISD = 36 A VGS = 0
1.5
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
75
245
6.5
ns
ISD = 36 A
VDD = 30 V
di/dt = 100 A/µs
Tj = 150 oC
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
STP36NE06FP
Thermal Impedance for TO-220
Thermal Impedance forTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP36NE06FP
Gate Charge vs Gate-sourceVoltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STP36NE06FP
Fig. 1: Unclamped InductiveLoad Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP36NE06FP
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/9
STP36NE06FP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
8/9
STP36NE06FP
Information furnished is believed tobe accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical componentsin life support devices or systems without express written approval of STMicroelectronics.
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1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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