STH5NA90FI [STMICROELECTRONICS]
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS; N - 沟道增强型功率MOS晶体管
| 型号： | STH5NA90FI |
| 厂家： | 
ST |
| 描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| 文件： | 总6页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STW5NA90
STH5NA90FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STW5NA90
STH5NA90FI
900 V
900 V
< 2.5 Ω
< 2.5 Ω
5.3 A
3.5 A
■
■
TYPICAL RDS(on) = 2.1 Ω
± 30 V GATE-TO-SOURCE VOLTAGE
RATING
■
■
■
■
100% AVALANCHE TESTED
3
REPETITIVE AVALANCHE DATA AT 100oC
GATE CHARGE MINIMISED
3
2
2
1
1
REDUCED THRESHOLD VOLTAGE SPREAD
TO-247
ISOWATT218
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLY (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STW5NA90 STH5NA90FI
Unit
VDS
VDGR
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
900
900
V
V
± 30
V
5.3
3.4
3.5
2.2
A
ID
A
I
DM(• )
21.2
150
1.2
21.2
60
A
Ptot
Total Dissipation at Tc = 25 oC
W
W/oC
Derating Factor
0.48
4000
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
V
-65 to 150
150
oC
oC
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/6
January 1998
STW5NA90-STH5NA90FI
THERMAL DATA
TO-247
ISOWATT218
Rthj-case Thermal Resistance Junction-case
Max
0.83
2.08
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
30
0.1
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
5.3
A
(pulse width limited by Tj max, δ < 1%)
EAS
Single Pulse Avalanche Energy
520
mJ
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
900
V
ID = 250 µA VGS = 0
IDSS
IGSS
VDS = Max Rating
25
250
µA
µA
o
Tc = 100 C
Gate-body Leakage
Current (VDS = 0)
±100
nA
VGS = ± 30 V
ON ( )
Symbol
Parameter
Test Conditions
VDS = VGS ID = 250 µA
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
2.25
3
3.75
V
RDS(on)
ID(on)
Static Drain-source On VGS = 10V ID = 2.5 A
Resistance VGS = 10V ID = 2.5 A
2.1
2.5
5
Ω
Ω
Tc = 100oC
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
5.3
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 2.5 A
Min.
Typ.
Max.
Unit
gfs ( )
4
6.4
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
1350
150
40
1900
210
60
pF
pF
pF
2/6
STW5NA90-STH5NA90FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 450 V
Min.
Typ.
Max.
Unit
td(on)
tr
ID
=
13
12
20
19
ns
ns
2.5 A
RG = 4.7 Ω
VGS = 10 V
(di/dt)on Turn-on Current Slope VDD = 720 V
ID = 5 A
250
A/µs
RG = 47 Ω
VGS = 10 V
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 720 V ID = 5 A VGS = 10 V
60
10
26
80
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 720 V
RG = 4.7 Ω
ID = 5A
VGS = 10 V
15
7
25
25
14
40
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (• )
Source-drain Current
Source-drain Current
(pulsed)
5.3
21.3
A
A
VSD ( ) Forward On Voltage
ISD = 5.3 A
VGS = 0
1.6
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
1150
17.3
30
ns
ISD = 5 A
VDD = 30 V
di/dt = 100 A/µs
Tj = 150 oC
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
STW5NA90-STH5NA90FI
TO-247 MECHANICAL DATA
mm
inch
DIM.
MIN.
TYP.
MAX.
5.3
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
TYP.
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
A
D
4.7
2.2
0.4
1
2.6
E
0.8
F
1.4
F3
F4
G
2
2.4
3
3.4
10.9
0.429
H
15.3
19.7
14.2
15.9
20.3
14.8
0.602
0.776
0.559
0.626
0.779
0.582
L
L3
L4
L5
M
0.413
1.362
0.217
34.6
5.5
2
3
0.079
0.140
0.118
0.144
Dia
3.55
3.65
P025P
4/6
STW5NA90-STH5NA90FI
ISOWATT218 MECHANICAL DATA
mm
inch
DIM.
MIN.
5.35
3.3
TYP.
MAX.
5.65
3.8
MIN.
0.210
0.130
0.114
0.074
0.029
0.041
0.425
0.622
0.818
0.752
0.897
1.594
0.190
0.797
0.137
0.082
TYP.
MAX.
0.222
0.149
0.122
0.081
0.039
0.049
0.441
0.637
0.834
0.783
0.929
1.673
0.206
0.817
0.145
0.090
A
C
D
2.9
3.1
D1
E
1.88
0.75
1.05
10.8
15.8
20.8
19.1
22.8
40.5
4.85
20.25
3.5
2.08
1
F
1.25
11.2
16.2
21.2
19.9
23.6
42.5
5.25
20.75
3.7
G
H
L1
L2
L3
L4
L5
L6
M
N
2.1
2.3
U
4.6
0.181
L3
N
L2
L5
L6
M
1
2
3
L1
L4
P025C
5/6
STW5NA90-STH5NA90FI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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. . .
6/6
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