STH6NA80FI [STMICROELECTRONICS]
N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR; N - CHANNEL 800V - 1.8ohm - 5.4A - TO- 247 / ISOWATT218快速功率MOS晶体管
| 型号： | STH6NA80FI |
| 厂家： | 
ST |
| 描述： | N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR |
| 文件： | 总10页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STW6NA80
STH6NA80FI
N - CHANNEL 800V - 1.8
Ω
- 5.4A - TO-247/ISOWATT218
FAST POWER MOS TRANSISTOR
TYPE
VDSS
RDS(on)
ID
STW6NA80
STH6NA80FI
800 V
800 V
< 2.2 Ω
< 2.2
Ω
5.4 A
3.4 A
■
■
■
■
■
■
■
TYPICAL RDS(on) = 1.8
Ω
AVALANCE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW GATE CHARGE
3
3
2
2
VERY HIGH CURRENT CAPABILITY
APPLICATIONORIENTED
1
1
CHARACTERIZATION
TO-247
ISOWATT218
APPLICATIONS
■
■
■
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STW6NA80 STH6NA80FI
Unit
VDS
VDGR
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k
Gate-source Voltage
800
800
V
V
)
Ω
± 30
V
Drain Current (continuous) at Tc = 25 oC
5.4
3.4
22
A
3.4
2.1
22
o
ID
Drain Current (continuous) at Tc = 100 C
A
I
DM(• )
Drain Current (pulsed)
A
o
Ptot
Total Dissipation at Tc = 25 C
150
1.2
W
W/oC
60
Derating Factor
0.48
4000
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
V
-65 to 150
150
oC
oC
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/10
October 1998
STW6NA80-STH6NA80FI
THERMAL DATA
TO-247
ISOWATT218
Rthj-case Thermal Resistance Junction-case
Max
0.83
2.08
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
30
0.1
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
5.4
A
(pulse width limited by Tj max, δ < 1%)
EAS
EAR
IAR
Single Pulse Avalanche Energy
150
5.8
3.4
mJ
mJ
A
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by T max, < 1%)
δ
j
Avalanche Current, Repetitive or Not-Repetitive
o
(Tc = 100 C, pulse width limited by Tj max, δ < 1%)
(Tcase = 25 oC unless otherwisespecified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 100 oC
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
800
V
ID = 250 µA VGS = 0
IDSS
IGSS
VDS = Max Rating
25
50
µA
µA
Gate-body Leakage
Current (VDS = 0)
± 100
nA
VGS = ± 30 V
ON ( )
Symbol
Parameter
Test Conditions
VDS = VGS ID = 250 µA
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
2.25
3
3.75
V
RDS(on)
ID(on)
Static Drain-source On VGS = 10 V ID = 3 A
Resistance
1.8
2.2
4.4
Ω
Ω
VGS = 10 V ID = 3 A Tc = 100oC
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
5.4
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
Min.
Typ.
Max.
Unit
gfs ( )
VDS > ID(on) x RDS(on)max
ID = 3 A
3
5.5
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
1250
140
35
1700
190
50
pF
pF
pF
2/10
STW6NA80-STH6NA80FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 400 V ID = 3 A
Min.
Typ.
Max.
Unit
td(on)
tr
40
100
55
135
ns
ns
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
(di/dt)on Turn-on Current Slope VDD = 640 V ID = 6 A
180
A/µs
RG = 47 Ω
VGS = 10 V
(see test circuit, figure 5)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 640 V ID = 6 A VGS = 10 V
55
8
24
75
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 640 V ID = 6 A
RG = 47 Ω VGS = 10 V
(see test circuit, figure 5)
75
25
110
100
35
150
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM ( )
Source-drain Current
Source-drain Current
(pulsed)
5.4
22
A
A
•
VSD ( ) Forward On Voltage
ISD = 6 A VGS = 0
1.6
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
800
15.2
38
ns
ISD = 6 A di/dt = 100 A/ s
VDD = 100 V
(see test circuit, figure 5)
µ
Tj = 150 oC
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
3/10
STW6NA80-STH6NA80FI
Thermal Impedance for TO-247
Thermal Impedance for ISOWATT218
Derating Curve for ISOWATT218
Transfer Characteristics
Derating Curve for TO-247
Output Characteristics
4/10
STW6NA80-STH6NA80FI
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-sourceVoltage
CapacitanceVariations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
STW6NA80-STH6NA80FI
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
Accidental Overload Area
Source-drainDiode Forward Characteristics
6/10
STW6NA80-STH6NA80FI
Fig. 1:
Fig. 2:
Unclamped Inductive Waveform
Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
7/10
STW6NA80-STH6NA80FI
TO-247 MECHANICAL DATA
mm
inch
DIM.
MIN.
TYP.
MAX.
5.3
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
TYP.
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
A
D
4.7
2.2
0.4
1
2.6
E
0.8
F
1.4
F3
F4
G
2
2.4
3
3.4
10.9
0.429
H
15.3
19.7
14.2
15.9
20.3
14.8
0.602
0.776
0.559
0.626
0.779
0.582
L
L3
L4
L5
M
0.413
1.362
0.217
34.6
5.5
2
3
0.079
0.140
0.118
0.144
Dia
3.55
3.65
P025P
8/10
STW6NA80-STH6NA80FI
ISOWATT218 MECHANICAL DATA
mm
inch
DIM.
MIN.
5.35
3.3
TYP.
MAX.
5.65
3.8
MIN.
0.210
0.130
0.114
0.074
0.029
0.041
0.425
0.622
0.818
0.752
0.897
1.594
0.190
0.797
0.137
0.082
TYP.
MAX.
0.222
0.149
0.122
0.081
0.039
0.049
0.441
0.637
0.834
0.783
0.929
1.673
0.206
0.817
0.145
0.090
A
C
D
2.9
3.1
D1
E
1.88
0.75
1.05
10.8
15.8
20.8
19.1
22.8
40.5
4.85
20.25
3.5
2.08
1
F
1.25
11.2
16.2
21.2
19.9
23.6
42.5
5.25
20.75
3.7
G
H
L1
L2
L3
L4
L5
L6
M
N
2.1
2.3
U
4.6
0.181
L3
N
L2
L5
L6
M
1
2
3
L1
L4
P025C
9/10
STW6NA80-STH6NA80FI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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10/10
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