STH60N10FI [STMICROELECTRONICS]
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR; N - 沟道增强型功率MOS晶体管
| 型号： | STH60N10FI |
| 厂家： | 
ST |
| 描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| 文件： | 总11页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STH60N10/FI
STW60N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
VDSS
RDS(on)
ID
STH60N10
STH60N10FI
STW60N10
100 V
100 V
100 V
< 0.025 Ω
< 0.025 Ω
< 0.025 Ω
60 A
36 A
60 A
TO-247
■
■
■
■
■
■
■
■
TYPICAL RDS(on) = 0.02 Ω
3
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
2
1
REPETITIVE AVALANCHE DATA AT 100oC
LOW GATE CHARGE
VERY HIGH CURRENT CAPABILITY
175oC OPERATING TEMPERATURE
APPLICATION ORIENTED
3
3
2
2
1
1
TO-218
ISOWATT218
CHARACTERIZATION
APPLICATIONS
■
■
■
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STH/STW60N10
Unit
STH60N10FI
VDS
VDG R
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
100
100
± 20
V
V
V
60
42
36
22
A
ID
A
IDM(•)
Ptot
240
200
1.33
240
A
Total Dissipation at Tc = 25 oC
70
W
W/oC
V
oC
oC
Derating Factor
0.56
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
4000
-65 to 150
150
-65 to 175
175
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/11
May 1993
STH60N10/FI STW60N10
THERMAL DATA
TO-218/TO-247 ISOWATT218
0.75 1.79
Rthj-case Thermal Resistance Junction-case
Max
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
30
0.1
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
60
A
(pulse width limited by Tj max, δ < 1%)
EAS
EAR
IAR
Single Pulse Avalanche Energy
720
180
37
mJ
mJ
A
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 C
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250 µA VGS = 0
100
V
IDSS
IGSS
VDS = Max Rating
250
1000
µA
µA
o
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 100
nA
ON ( )
Symbol
Parameter
Test Conditions
Min.
Typ.
2.9
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS = VGS ID = 250 µA
2
4
V
RDS(on) Static Drain-source On VGS = 10 V ID = 30 A
0.02
0.025
0.05
Ω
Ω
Resistance
VGS = 10 V ID = 30 A Tc = 100oC
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
60
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
Min.
Typ.
Max.
Unit
gfs ( )
VDS > ID(on) x RDS(on)max
ID = 30 A
25
35
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
4000
1100
250
5000
1400
350
pF
pF
pF
2/11
STH60N10/FI STW60N10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 80 V ID = 30 A
RG = 50 Ω VGS = 10 V
(see test circuit, figure 3)
(di/dt)on Turn-on Current Slope VDD = 80 V ID = 60 A
Min.
Typ.
Max.
Unit
td(on)
tr
90
270
130
380
ns
ns
270
A/µs
RG = 50 Ω
VGS = 10 V
(see test circuit, figure 5)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 80 V ID = 30 A VGS = 10 V
120
16
60
170
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 80 V ID = 60 A
RG = 50 Ω VGS = 10 V
(see test circuit, figure 5)
200
210
410
280
290
570
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Source-drain Current
Test Conditions
Min.
Typ.
Max.
Unit
ISD
60
240
A
A
ISDM(• ) Source-drain Current
(pulsed)
VSD ( ) Forward On Voltage
ISD = 60 A VGS = 0
1.6
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
ISD = 60 A di/dt = 100 A/µs
VDD = 30 V
(see test circuit, figure 5)
180
1
ns
Tj = 150 oC
Qrr
µC
IRRM
Reverse Recovery
Current
11
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-218 and TO-247
Safe Operating Areas For ISOWATT218
3/11
STH60N10/FI STW60N10
Thermal Impedeance For TO-218 and TO-247
Thermal Impedance For ISOWATT218
Derating Curve For ISOWATT218
Transfer Characteristics
Derating Curve For TO-218 and TO-247
Output Characteristics
4/11
STH60N10/FI STW60N10
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/11
STH60N10/FI STW60N10
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
6/11
STH60N10/FI STW60N10
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge Test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
7/11
STH60N10/FI STW60N10
TO-247 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
5.3
MIN.
MAX.
0.208
0.113
0.098
0.055
0.088
0.135
0.031
0.833
0.215
0.628
A
A1
A2
b
4.7
0.185
2.87
2.5
1.5
1
0.059
0.039
1.4
b1
b2
C
2.25
3.43
0.8
3.05
0.4
0.120
0.015
0.803
0.213
0.602
0.613
0.145
0.208
0.137
D
20.4
5.43
15.3
15.57
3.7
21.18
5.47
15.95
e
E
L
L1
Q
4.3
0.169
0.230
0.146
5.3
5.84
3.71
ØP
3.5
D
L
L1
Q
ø
8/11
STH60N10/FI STW60N10
TO-218 (SOT-93) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.7
TYP.
MAX.
4.9
MIN.
0.185
0.046
MAX.
0.193
0.054
A
C
1.17
1.37
D
2.5
0.098
E
0.5
1.1
10.8
14.7
–
0.78
1.3
0.019
0.043
0.425
0.578
–
0.030
0.051
0.437
0.598
0.637
F
G
11.1
15.2
16.2
H
L2
L3
L5
L6
R
18
31
0.708
1.220
3.95
4.15
0.155
0.163
–
4
12.2
4.1
–
0.480
0.161
Ø
0.157
L6
L5
L3
L2
Ø
R
1
2
3
P025A
9/11
STH60N10/FI STW60N10
ISOWATT218 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
5.65
3.8
MIN.
0.210
0.130
0.114
0.074
0.017
0.041
0.425
0.622
0.818
0.752
0.897
1.594
0.190
0.797
0.137
0.082
MAX.
0.222
0.149
0.122
0.081
0.039
0.049
0.441
0.637
0.834
0.783
0.929
1.673
0.206
0.817
0.145
0.090
A
C
5.35
3.3
D
2.9
3.1
D1
E
1.88
0.45
1.05
10.8
15.8
20.8
19.1
22.8
40.5
4.85
20.25
3.5
2.08
1
F
1.25
11.2
16.2
21.2
19.9
23.6
42.5
5.25
20.75
3.7
G
H
L1
L2
L3
L4
L5
L6
M
N
2.1
2.3
U
4.6
0.181
L3
N
L2
L5
L6
M
1
2
3
L1
L4
P025C
10/11
STH60N10/FI STW60N10
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
11/11
相关型号：
STH6NA80FI
N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
STMICROELECTR
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