STH6N100 [STMICROELECTRONICS]
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR; N - 沟道增强型功率MOS晶体管
| 型号： | STH6N100 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| 文件： | 总10页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STH6N100
STH6N100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
VDSS
RDS(on)
ID
STH6N100
STH6N100FI
1000 V
1000 V
< 2 Ω
< 2 Ω
6 A
3.7 A
■
■
■
■
■
■
■
TYPICAL RDS(on) = 1.75 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW INPUT CAPACITANCE
LOW GATE CHARGE
3
3
2
2
1
1
APPLICATION ORIENTED
CHARACTERIZATION
TO-218
ISOWATT218
APPLICATIONS
■
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
CONSUMER AND INDUSTRIAL LIGHTING
DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STH6N100
STH6N100
VDS
VDG R
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
1000
1000
± 20
V
V
V
6
3.7
2.3
A
ID
3.7
24
A
IDM(•)
Ptot
24
A
Total Dissipation at Tc = 25 oC
180
1.44
70
W
W/oC
V
oC
oC
Derating Factor
0.56
4000
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/10
December 1996
STH6N100/FI
THERMAL DATA
TO-218
ISOWATT218
Rthj-case Thermal Resistance Junction-case
Max
0.69
1.78
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
30
0.1
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
6
A
(pulse width limited by Tj max, δ < 1%)
EAS
EAR
IAR
Single Pulse Avalanche Energy
850
16
mJ
mJ
A
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
3.7
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 C
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250 µA VGS = 0
1000
V
IDSS
IGSS
VDS = Max Rating
25
250
µA
µA
o
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 100
nA
ON ( )
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
Unit
V
VGS(th)
Gate Threshold Voltage VDS = VGS ID = 250 µA
2
4
2
RDS(on) Static Drain-source On VGS = 10V ID = 3 A
Resistance
1.75
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
6
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
Min.
Typ.
Max.
Unit
gfs ( )
VDS > ID(on) x RDS(on)max
ID = 3 A
4
5.5
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
2150
260
105
2800
330
130
pF
pF
pF
2/10
STH6N100/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 500 V ID = 3 A
RG = 50 Ω VGS = 10 V
(see test circuit, figure 3)
(di/dt)on Turn-on Current Slope VDD = 800 V ID = 6 A
Min.
Typ.
Max.
Unit
td(on)
tr
70
210
90
280
ns
ns
180
A/µs
RG = 50 Ω
VGS = 10 V
(see test circuit, figure 5)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400 V ID = 6 A VGS = 10 V
125
15
55
150
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 800 V ID = 6 A
190
50
265
250
65
345
ns
ns
ns
RG = 50 Ω
VGS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Source-drain Current
Test Conditions
Min.
Typ.
Max.
Unit
ISD
6
24
A
A
ISDM(• ) Source-drain Current
(pulsed)
VSD ( ) Forward On Voltage
ISD = 6 A VGS = 0
2
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
ISD = 6 A
VDD = 100 V
(see test circuit, figure 5)
di/dt = 100 A/µs
Tj = 150 oC
1100
31
ns
Qrr
µC
IRRM
Reverse Recovery
Current
57
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-218
Safe Operating Areas For ISOWATT218
3/10
STH6N100/FI
Thermal Impedeance For TO-218
Thermal Impedance For ISOWATT218
Derating Curve For ISOWATT218
Transfer Characteristics
Derating Curve For TO-218
Output Characteristics
4/10
STH6N100/FI
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
STH6N100/FI
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
6/10
STH6N100/FI
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge Test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
7/10
STH6N100/FI
TO-218 (SOT-93) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.7
TYP.
MAX.
4.9
MIN.
0.185
0.046
MAX.
0.193
0.054
A
C
1.17
1.37
D
2.5
0.098
E
0.5
1.1
10.8
14.7
–
0.78
1.3
0.019
0.043
0.425
0.578
–
0.030
0.051
0.437
0.598
0.637
F
G
11.1
15.2
16.2
H
L2
L3
L5
L6
R
18
31
0.708
1.220
3.95
4.15
0.155
0.163
–
4
12.2
4.1
–
0.480
0.161
Ø
0.157
L6
L5
L3
L2
Ø
R
1
2
3
P025A
8/10
STH6N100/FI
ISOWATT218 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
5.35
3.3
TYP.
MAX.
5.65
3.8
MIN.
0.210
0.130
0.114
0.074
0.017
0.041
0.425
0.622
0.818
0.752
0.897
1.594
0.190
0.797
0.137
0.082
MAX.
0.222
0.149
0.122
0.081
0.039
0.049
0.441
0.637
0.834
0.783
0.929
1.673
0.206
0.817
0.145
0.090
A
C
D
2.9
3.1
D1
E
1.88
0.45
1.05
10.8
15.8
20.8
19.1
22.8
40.5
4.85
20.25
3.5
2.08
1
F
1.25
11.2
16.2
21.2
19.9
23.6
42.5
5.25
20.75
3.7
G
H
L1
L2
L3
L4
L5
L6
M
N
2.1
2.3
U
4.6
0.181
L3
N
L2
L5
L6
M
1
2
3
L1
L4
P025C
9/10
STH6N100/FI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in lifesupport devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSONMicroelectronics GROUP OF COMPANIES
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.
10/10
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STMICROELECTR
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