STB7101TR [STMICROELECTRONICS]
0.9/1.9GHZ BROAD BAND PRE-POWER AMPLIFIER ; 0.9 / 1.9GHz的宽带PRE -POWER放大器\n
| 型号： | STB7101TR |
| 厂家： | 
ST |
| 描述： | 0.9/1.9GHZ BROAD BAND PRE-POWER AMPLIFIER
|
| 文件： | 总5页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB7101
0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER
• OPERATING FREQUENCY 900-1900MHz
• OUTPUT POWER 9.8dBm typ. @ 900MHz
7.5dBm typ. @ 1900MHz
• POWER GAIN G = 20.3dB typ. @ 900MHz
P
G = 20.5dB typ. @ 1900MHz
P
SOT323-6L (SC70)
ORDER CODE
BRANDING
STB7101
101
APPLICATIONS
PA driver for cellular applications
(Top View)
(Bottom View)
6
5
6
1
2
1
2
3
5
4
DESCRIPTION
The STB7101, designed for cellular applications
(0.9/1.9GHz), uses a 20 GHz F silicon bipolar
4
3
T
process. This IC is a wide range amplifier operating
from 900MHz to 1900MHz, in the overall
frequencies range the gain flatness is less than 1
dB. The STB7101 is housed in a very small SMD
package SOT323-6L.
PIN CONNECTION
Pin No.
Pin Name
1
2
3
4
5
6
GND
GND
INPUT
VCC
GND
OUTPUT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Supply voltage
Conditions
Value
4.5
Unit
o
V
V
T = +25 C, pin 4 and 6
cc
a
o
T
Storage temperature
Operating ambient temperature
Input power
-55 to +150
-40 to +85
10
stg
C
o
T
a
C
o
P
dBm
T = +25 C
in
a
January, 22 2002
1/5
STB7101
o
ELECTRICAL CHARACTERISTICS (T = +25 C, V = 2.75V, Z = Z = 50Ω, unless otherwise specified)
a
cc
L
s
Symbol
Parameter
Supply voltage
Circuit current
Test Conditions
Min.
Typ.
2.75
28
Max.
Unit
V
V
cc
2.6
3.3
I
cc
No signal
mA
f = 0.9GHz
f = 1.9GHz
20.3
20.5
G
Power Gain
Noise figure
dB
dB
p
f = 0.9GHz
f = 1.9GHz
5
4.5
NF
Output 1dB Compr.
Power
f = 0.9GHz
f = 1.9GHz
9.8
7.5
P
dBm
dB
1dB
f = 0.9GHz
f = 1.9GHz
8
6.2
RL
Input return loss
Output Return loss
Isolation
IN
f = 0.9GHz
f = 1.9GHz
9.7
9.7
RL
dB
OUT
f = 0.9GHz
f = 1.9GHz
-34
-33
S
dB
12
Saturated output power
level
f = 0.9GHz
f = 1.9GHz
11.3
9.7
P (Sat)
dBm
dBm
o
f = 0.9GHz
f = 1.9GHz
Output Third Order
Intercept
16.5
14.9
OIP3
TYPICAL EVALUATION CIRCUIT
J2
U1
GND OUTPUT
C2
27p
1
6
J1
2
3
5
4
GND
GND
Vcc
RF OUT
C1
L1
15n
27p
INPUT
RF IN
STB7101
L2 33 n
VCC (+2.75V)
C3
27p
C4
10n
Evaluation circuit components
C1 = C2 = C3 = 27pF
C4 = 10nF
L1 = 15nH
L2 = 33nH
2/5
STB7101
o
TYPICAL PERFORMANCE (T = +25 C, Vcc = 2.75V, unless otherwise specified)
a
Circuit Current versus Supply Voltage
Insertion Power Gain versus Frequency
24
22
20
18
16
14
12
10
8
40
35
30
25
20
15
10
5
0
-5
6
0
0.5
1
1.5
2
2.5
3
3.5
800
1000
1200
1400
1600
1800
2000
Vcc (V)
Frequency (MHz)
Isolation versus Frequency
Noise Figure versus Frequency
7
0
-10
-20
-30
-40
-50
6
5
4
3
800
1000
1200
1400
1600
1800
2000
800
1000
1200
1400
1600
1800
2000
Frequency (MHz)
Frequency (MHz)
Power Gain versus Output Power @ 900 MHz
Power Gain versus Output Power @ 1900 MHz
24
22
20
18
16
14
12
10
8
24
22
20
18
16
14
12
10
8
6
6
-10 -8 -6 -4 -2
0
2
4
6
8
10 12
-10 -8 -6 -4 -2
0
2
4
6
8
10
Output Power (dBm)
Output Power (dBm)
3/5
STB7101
DIM.
SOT323-6L MECHANICAL DATA
mm
Inch
TYP.
MIN.
0.8
0
TYP.
MAX
1.1
MIN.
0.031
0
MAX
0.043
0.004
0.039
0.012
0.007
0.088
0.59
A
A1
A2
b
0.1
0.8
0.15
0.1
1.8
1.15
1
0.0031
0.006
0.004
0.071
0.045
0.3
c
0.18
2.2
D
E
1.35
e
0.65
0.025
H
1.8
0.1
2.4
0.4
0.071
0.004
0.094
0.016
Q
4/5
STB7101
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics - All Rights Reserved
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