STB75N20 [STMICROELECTRONICS]
N-channel 200V - 0.028Ω - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET? Power MOSFET; N沟道200V - 0.028Ω - 75A - D2PAK - TO- 220 - TO- 247低栅极电荷的STripFET ？功率MOSFET
| 型号： | STB75N20 |
| 厂家： | 
ST |
| 描述： | N-channel 200V - 0.028Ω - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET? Power MOSFET |
| 文件： | 总16页 (文件大小：505K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB75N20
STP75N20 - STW75N20
N-channel 200V - 0.028Ω - 75A - D2PAK - TO-220 - TO-247
Low gate charge STripFET™ Power MOSFET
General features
Type
VDSS
200V
200V
200V
RDS(on)
<0.034Ω
<0.034Ω
<0.034Ω
ID
STB75N20
STP75N20
STW75N20
75A
75A
75A
3
1
D²PAK
TO-247
■ Exceptional dv/dt capability
■ Low gate charge
3
2
1
■ 100% Avalanche tested
TO-220
Description
This Power MOSFET series realized with
Internal schematic diagram
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STB75N20T4
STP75N20
STW75N20
B75N20
P75N20
W75N20
D²PAK
TO-220
TO-247
Tape & reel
Tube
Tube
July 2006
Rev 4
1/16
www.st.com
16
Contents
STB75N20 - STP75N20 - STW75N20
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/16
STB75N20 - STP75N20 - STW75N20
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VDGR
VGS
ID
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
200
200
20
V
V
V
A
A
A
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
75
ID
47
(1)
IDM
300
1.52
190
Derating factor
PTOT
Total dissipation at TC = 25°C
W
TJ
Operating junction temperature
Storage temperture
-50 to 150
°C
Tstg
1. ISD < 20A, di/dt < 100A/µs, VDD = 80% V(BR)DSS
Table 2.
Symbol
Thermal resistance
Parameter
Value
Unit
TO-220/D²PAK
TO-247
RthJC
Thermal resistance junction-case Max
Thermal resistance junction-pcb Max
Thermal resistance junction-ambient Max
0.66
°C/W
°C/W
°C/W
(1)
RthJ-pcb
RthJA
34
--
62.5
40
Maximum lead temperature for soldering
purpose
Tl
300
°C
1. When mounted on inch²FR-4 board (t < 10µs)
Table 3.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
IAR
37
A
Single pulse avalanche energy
EAS
205
mJ
(starting TJ= 25°C, Id= Iar, Vdd=50V)
3/16
Electrical characteristics
STB75N20 - STP75N20 - STW75N20
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
ID = 1mA, VGS= 0
200
V
VDS = Max rating,
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = Max rating @125°C
10
Gate body leakage current
(VDS = 0)
IGSS
VDS
=
20V
100
4
nA
V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
2
3
Static drain-source on
resistance
RDS(on)
VGS= 10V, ID= 37A
0.028
0.034
Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
(1)
V
DS = 15V I = 37A
Forward transconductance
40
S
gfs
, D
Input capacitance
Ciss
Coss
Crss
3260
640
pF
pF
pF
VDS = 25V, f = 1 MHz,
VGS =0
Output capacitance
Reverse Transfer
Capacitance
110
Qg
Qgs
Qgd
VDD= 160V, ID=75A,
VGS= 10V
Total gate charge
Gate-source charge
Gate-drain charge
84
18
34
nC
nC
nC
(see Figure 16)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
53
33
75
29
ns
ns
ns
ns
VDD = 100V, ID = 37A
RG= 4.7Ω, VGS= 10V,
(see Figure 15)
Turn-off delay time
Fall time
4/16
STB75N20 - STP75N20 - STW75N20
Electrical characteristics
Min Typ. Max Unit
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
Source-drain current
75
A
A
(1)
Source-drain current (pulsed)
300
ISDM
(2)
ISD = 75A, VGS = 0
Forward on voltage
1.6
V
VSD
trr
ISD = 75A,VDD = 100V
di/dt = 100 A/µs
Reverse recovery time
Reverse recovery charge
Reverse recovery current
222
2.18
19
ns
µC
A
Qrr
Tj = 25°C (see Figure 20)
IRRM
trr
ISD = 75A, VDD = 100V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
267
3
ns
µC
A
Qrr
di/dt = 100 A/µs
Tj = 150°C (see Figure 20)
22
IRRM
1. Pulse with limited by maximum temperature
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/16
Electrical characteristics
STB75N20 - STP75N20 - STW75N20
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220 /
D²PAK
Figure 2. Thermal impedance for TO-220 /
D²PAK
Figure 3. Safe operating area for TO-247
Figure 4. Thermal impedance for TO-247
Figure 5. Output characterisics
Figure 6. Transfer characteristics
6/16
STB75N20 - STP75N20 - STW75N20
Electrical characteristics
Figure 7. Normalized B
vs temperature
Figure 8. Static drain-source on resistance
VDSS
Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs
vs temperature temperature
7/16
Electrical characteristics
STB75N20 - STP75N20 - STW75N20
Figure 13. Source-drain diode forward
characteristics
Figure 14. Avalanche energy vs starting Tj
8/16
STB75N20 - STP75N20 - STW75N20
Test circuit
3
Test circuit
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test
circuit
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
9/16
Package mechanical data
STB75N20 - STP75N20 - STW75N20
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/16
STB75N20 - STP75N20 - STW75N20
Package mechanical data
TO-220 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
TYP.
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
4.40
0.61
1.15
0.49
15.25
10
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
11/16
Package mechanical data
STB75N20 - STP75N20 - STW75N20
TO-247 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.85
2.20
1.0
MAX.
5.15
MIN.
0.19
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
12/16
STB75N20 - STP75N20 - STW75N20
Package mechanical data
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
TYP.
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
4.4
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
13/16
Packaging mechanical data
STB75N20 - STP75N20 - STW75N20
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
14/16
STB75N20 - STP75N20 - STW75N20
Revision history
6
Revision history
Table 8.
Date
Revision history
Revision
Changes
08-May-2005
28-Mar-2006
19-May-2006
19-Jul-2006
1
2
3
4
First release
Preliminary version
Complete version with curves
New template, no content change
15/16
STB75N20 - STP75N20 - STW75N20
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16/16
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