STB75NE75 [STMICROELECTRONICS]
N - CHANNEL 75V - 0.01 ohm - 75A - D2PAK STripFET] POWER MOSFET; N - CHANNEL 75V - 0.01欧姆 - 75A - D2PAK的STripFET ] POWER MOSFET
| 型号： | STB75NE75 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL 75V - 0.01 ohm - 75A - D2PAK STripFET] POWER MOSFET |
| 文件： | 总8页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB75NE75
2
N - CHANNEL 75V - 0.01 Ω - 75A - D PAK
STripFET POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB75NE75
75 V
<0.013 Ω
75 A
■
■
■
■
TYPICAL RDS(on) = 0.01 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATIONORIENTED
CHARACTERIZATION
3
■
■
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
1
D2PAK
TO-263
DESCRIPTION
(suffix ”T4”)
This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size ” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturingreproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
■
SOLENOID AND RELAY DRIVERS
DC MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC CONVERTERS
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
Parameter
Value
75
Unit
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
V
V
75
± 20
75
V
o
Drain Current (continuous) at Tc = 25 C
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
A
ID
53
A
I
DM(• )
300
A
o
Ptot
Total Dissipation at Tc = 25 C
160
W
Derating Factor
1.06
7
W/oC
V/ns
oC
oC
dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
-65 to 175
Tj
Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area
( ) ISD ≤ 75 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1
1/8
March 1999
STB75NE75
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Max
Typ
0.94
62.5
0.5
oC/W
oC/W
oC/W
oC
Thermal Resistance Junction-ambient
Rthj-amb
Rthc-sink Thermal Resistance Case-sink
Tl
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
75
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 C, ID = IAR, VDD = 30 V)
500
mJ
o
(Tcase = 25 oC unless otherwisespecified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250
A
VGS = 0
75
V
µ
IDSS
IGSS
VDS = Max Rating
1
10
A
µ
µA
o
Tc = 125 C
Gate-body Leakage
Current (VDS = 0)
VGS
=
20 V
100
±
nA
±
ON ( )
Symbol
VGS(th)
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
Gate Threshold Voltage VDS = VGS ID = 250 µA
2
V
RDS(on)
Static Drain-source On VGS = 5 V
Resistance
ID = 37.5 A
10
13
m
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
75
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID =37.5 A
Min.
Typ.
Max.
Unit
gfs ( )
40
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
5300
850
310
pF
pF
pF
2/8
STB75NE75
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Min.
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 40 V
RG = 4.7
ID = 40 A
VGS = 10 V
32
130
ns
ns
Ω
(Resistive Load, see fig. 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 60 V ID = 75 A VGS = 10 V
150
30
62
200
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 40 V
ID = 40 A
150
45
ns
ns
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, see fig. 3)
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 60 V
ID = 75 A
35
60
100
ns
ns
ns
RG = 4.7 Ω
VGS = 4.5 V
(Inductive Load, see fig. 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
ISD
ISDM ( )
Source-drain Current
Source-drain Current
(pulsed)
75
300
A
A
•
VSD ( ) Forward On Voltage
ISD = 75 A VGS = 0
1.5
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 75 A
VDD = 30 V
(see test circuit, fig. 5)
di/dt = 100 A/ s
130
0.6
9
ns
µ
Tj = 150 oC
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
•
Safe Operating Area
Thermal Impedance
3/8
STB75NE75
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-sourceVoltage
CapacitanceVariations
4/8
STB75NE75
Normalized Gate ThresholdVoltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drainDiode Forward Characteristics
5/8
STB75NE75
Fig. 1:
Fig. 2:
UnclampedInductive Waveform
Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
6/8
STB75NE75
2
TO-263 (D PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.027
0.044
0.017
0.047
0.352
0.393
0.192
0.590
0.050
0.055
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.409
0.208
0.624
0.055
0.068
A
A1
B
2.49
0.7
2.69
0.93
1.7
B2
C
1.14
0.45
1.21
8.95
10
0.6
C2
D
1.36
9.35
10.4
5.28
15.85
1.4
E
G
4.88
15
L
L2
L3
1.27
1.4
1.75
D
A
C
C2
DETAIL”A”
DETAIL”A”
A1
B
B2
E
G
L3
L2
L
P011P6/E
7/8
STB75NE75
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all informaiton previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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.
8/8
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