STB7102TR [STMICROELECTRONICS]
0.5/2.5 GHz UHF LO BUFFER AMPLIFIER; 0.5 / 2.5 GHz的超高频LO缓冲放大器
| 型号： | STB7102TR |
| 厂家： | 
ST |
| 描述： | 0.5/2.5 GHz UHF LO BUFFER AMPLIFIER |
| 文件： | 总9页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB7102
0.5/2.5 GHz UHF LO BUFFER AMPLIFIER
• OPERATING FREQUENCY 500-2500MHz
• LOW CURRENT CONSUMPTION
• EXCELLENT ISOLATION
• ULTRA MINIATURE SOT323-6L PACKAGE
SOT323-6L (SC70)
ORDER CODE
APPLICATIONS
BRANDING
STB7102TR
102
• BUFFER AMPLIFIER FOR 0.5/2.5 GHz
APPLICATIONS
• CDMA/PCS LO BUFFER AMPLIFIER
(Top View)
(Bottom View)
4
5
4
3
2
3
5
6
2
1
DESCRIPTION
The STB7102, designed for RF Mobile Phone
applications (0.5/2.5GHz), is an high isolation
Local Oscillator Buffer Amplifier. Manufactured in
the third generation of ST proprietary bipolar
process, it offers an excellent isolation and a good
linearity using only 4mA current consumption. The
STB7102 is housed in an ultra miniature package
SOT323-6L surface mount package.
6
1
PIN CONNECTION
Pin No.
Pin Name
1
2
3
4
5
6
INPUT
GND
GND
OUTPUT
GND
VCC
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Supply voltage
Conditions
Value
3.3
Unit
V
V
cc
o
T
Storage temperature
-40 to +100
-30 to +85
stg
C
o
T
Operating ambient temperature
a
C
February, 25 2002
1/9
STB7102
ELECTRICAL CHARACTERISTICS (CELL BAND)
o
(T = +25 C, V = 2.7V, Z = Z = 50Ω, tested in circuit shown in fig.1, unless otherwise specified)
a
cc
s
L
Symbol
Parameters
Test Conditions
Min
990
2.6
3.3
Typ
Max Unit
1030 MHz
Freq.
Vcc
Frequency Range
Supply Voltage
2.7
4.3
-2
2.8
5.3
V
mA
dBm
dB
Icc
Current Consumption
Output Power at 1dB Compression Point
Power Gain
P1dB
Gp
F = 1010 MHz
F = 1010 MHz
F = 1010 MHz
F = 1010 MHz
F = 1010 MHz
F = 1010 MHz
16.7
2.7
45
NF
Noise Figure
dB
Isol.
RLin
RLout
Reverse Isolation
dB
Input Return Loss
Output Return Loss
30
dB
17.8
dB
Figure 1 Cell Band Application Circuit Configuration
C8
1.5pF
L2
2n2
J2
RF OUT
U1
ULOBA
3
4
5
6
GND
OUT
GND
VCC
L3
10nH
C1
33pF
2
1
GND
INPUT
JP1
J1
RF IN
VCC
L4
1
2
5n6
L1
33nH
C2
C5
10nF
C3
33pF
1uF
2/9
STB7102
TYPICAL PERFORMANCE (CELL BAND)
Power Gain vs. Frequency and Voltage
Power Gain vs. Frequency and Temperature
20
20
18
16
14
12
10
8
18
16
14
12
10
8
Vcc = 2.8 V
Vcc = 2.7 V
Ta = -30 °C
Ta = 85 °C
Vcc = 2.6 V
Ta = 25 °C
6
6
4
4
2
2
Ta = 25 °C
Vcc = 2.7 V
0
0
800
900
1000
1100
1200
800
900
1000
1100
1200
Frequency (MHz)
Frequency (MHz)
Reverse Isolation vs. Frequency and Temperature
Reverse Isolation vs. Frequency and Voltage
0
0
-10
-20
-30
Ta = 25 °C
Vcc = 2.7 V
-10
-20
-30
-40
-40
Ta = -30 °C
Vcc = 2.7 V
-50
-50
-60
Vcc = 2.8 V
Ta = 85 °C
Ta = 25 °C
Vcc = 2.6 V
-60
800
900
1000
Frequency (MHz)
1100
1200
800
900
1000
Frequency (MHz)
1100
1200
Input Return Loss vs. Frequency and Temperature
Input Return Loss vs. Frequency and Voltage
0
0
-5
Vcc = 2.7 V
Ta = 25 °C
-5
-10
-15
-10
-15
Vcc = 2.8 V
Ta = 85 °C
-20
-20
-25
-30
-25
-30
Vcc = 2.7 V
Vcc = 2.6 V
Ta = -30 °C
Ta = 25 °C
-35
800
-35
900
1000
1100
1200
800
900
1000
1100
1200
Frequency (MHz)
Frequency (MHz)
3/9
STB7102
TYPICAL PERFORMANCE (CELL BAND)
Output Return Loss vs. Frequency and Voltage
Output Return Loss vs. Frequency and Temperature
0
0
Ta = 25 °C
Vcc = 2.7 V
-5
-10
-15
-20
-25
-30
-35
-40
-45
-5
Ta = 85 °C
-10
-15
Vcc = 2.7 V
Vcc = 2.8 V
Vcc = 2.6 V
-20
Ta = -30 °C
Ta = 25 °C
-25
-30
-35
-40
-45
800
900
1000
1100
1200
800
900
1000
1100
1200
Frequency (MHz)
Frequency (MHz)
Output Power @ 1dB compression point
Noise Figure vs. Frequency
4
3.5
3
17
16
15
14
13
12
2.5
2
P1dB
1.5
1
0.5
0
F = 1010 MHz
-13 -12 -11 -10 -9 -8
-7
-6
-5 -4
-3
-2 -1
0
800
900
1000
1100
1200
Poutput (dBm)
Frequency (MHz)
4/9
STB7102
ELECTRICAL CHARACTERISTICS (PCS BAND)
o
(T = +25 C, V = 2.7V, Z = Z = 50Ω, tested in circuit shown in fig.2, unless otherwise specified)
a
cc
s
L
Symbol
Parameters
Test Conditions
Min
2040
2.6
Typ
Max Unit
2135 MHz
Freq.
Vcc
Frequency Range
Supply Voltage
2.7
4.3
-1
2.8
5.3
V
mA
dBm
dB
Icc
Current Consumption
Output Power at 1dB Compression Point
Power Gain
3.3
P1dB
Gp
F = 2085 MHz
F = 2085 MHz
F = 2085 MHz
F = 2085 MHz
F = 2085 MHz
F = 2085 MHz
10
5
NF
Noise Figure
dB
Isol.
RLin
RLout
Reverse Isolation
41
17
24
dB
Input Return Loss
Output Return Loss
dB
dB
Figure 2 PCS Band Application Circuit Configuration
C8
22pF
L2
6n8
J2
RF OUT
U1
ULOBA
3
4
5
6
GND
OUT
GND
VCC
L3
10nH
C1
33pF
2
1
GND
INPUT
JP1
J1
VCC
RF IN
1
2
C2
L1
33nH
C5
10nF
C3
33pF
1uF
5/9
STB7102
TYPICAL PERFORMANCE (PCS BAND)
Power Gain vs. Frequency and Voltage
Power Gain vs. Frequency and Temperature
12
12
Ta = -30 °C
Ta = 25 °C
Vcc = 2.7 V
Vcc = 2.8 V
10
8
10
Vcc = 2.6 V
Ta = 85 °C
8
6
4
6
4
2
2
Ta = 25 °C
Vcc = 2.7 V
0
0
1800
1900
2000
2100
2200
1800
1900
2000
2100
2200
Frequency (MHz)
Frequency (MHz)
Reverse Isolation vs. Frequency and Temperature
Reverse Isolation vs. Frequency and Voltage
0
0
-10
-20
-30
Vcc = 2.7 V
Ta = 25 °C
-10
-20
-30
Ta = 25 °C
Vcc = 2.7 V
Vcc = 2.8 V
-40
-40
-50
-60
Ta = 85 °C
Vcc = 2.6 V
Ta = -30 °C
-50
-60
1800
1900
2000
2100
2200
1800
1900
2000
Frequency (MHz)
2100
2200
Frequency (MHz)
Input Return Loss vs. Frequency and Temperature
Input Return Loss vs. Frequency and Voltage
0
0
-2
Ta = 25 °C
Vcc = 2.7 V
-2
-4
-4
-6
-6
-8
-8
-10
-12
-14
-16
-18
-20
-10
-12
-14
Ta = 25 °C
Ta = -30 °C
Vcc = 2.8 V
-16
-18
-20
Vcc = 2.7 V
Ta = 85 °C
Vcc = 2.6 V
1800
1900
2000
2100
2200
1800
1900
2000
2100
2200
Frequency (MHz)
Frequency (MHz)
6/9
STB7102
TYPICAL PERFORMANCE (PCS BAND)
Output Return Loss vs. Frequency and Voltage
Output Return Loss vs. Frequency and Temperature
0
0
-5
Ta = 25 °C
Vcc = 2.7 V
-5
-10
-15
-20
-25
-30
-35
-40
-45
-10
-15
-20
-25
-30
-35
-40
-45
Ta = -30 °C
Vcc = 2.8 V
Vcc = 2.7 V
Ta = 85 °C
Vcc = 2.6 V
Ta = 25 °C
1800
1900
2000
2100
2200
1800
1900
2000
2100
2200
Frequency (MHz)
Frequency (MHz)
Output Power @ 1dB compression point
Noise Figure vs. Frequency
6
5.5
5
11
10
9
4.5
4
8
3.5
3
7
P1dB
2.5
F = 2087.5 MHz
2
6
-12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1
0
1
2
1800
1900
2000
2100
2200
Poutput (dBm)
Frequency (MHz)
7/9
STB7102
DIM.
SOT323-6L MECHANICAL DATA
mm
Inch
TYP.
MIN.
0.8
0
TYP.
MAX
1.1
MIN.
0.031
0
MAX
0.043
0.004
0.039
0.012
0.007
0.088
0.59
A
A1
A2
b
0.1
0.8
0.15
0.1
1.8
1.15
1
0.0031
0.006
0.004
0.071
0.045
0.3
c
0.18
2.2
D
E
1.35
e
0.65
0.025
H
1.8
0.1
2.4
0.4
0.071
0.004
0.094
0.016
Q
8/9
STB7102
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2002 STMicroelectronics - All Rights Reserved
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9/9
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