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STB70NFS03L [STMICROELECTRONICS]

N - CHANNEL 30V - 0.008ohm - 70A D2PAK STripFET MOSFET PLUS SCHOTTKY RECTIFIER; N - CHANNEL 30V - 0.008ohm - 70A D2PAK的STripFET MOSFET PLUS肖特基整流器
STB70NFS03L
型号： STB70NFS03L
厂家： ST    ST
描述：

N - CHANNEL 30V - 0.008ohm - 70A D2PAK STripFET MOSFET PLUS SCHOTTKY RECTIFIER
N - CHANNEL 30V - 0.008ohm - 70A D2PAK的STripFET MOSFET PLUS肖特基整流器

晶体 晶体管 功率场效应晶体管 开关 脉冲
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STB70NFS03L  
2
N - CHANNEL 30V - 0.008Ω - 70A D PAK  
STripFET MOSFET PLUS SCHOTTKY RECTIFIER  
PRELIMINARY DATA  
MAIN PRODUCT CHARACTERISTICS  
VDSS  
RDS(on )  
ID  
MOSFET  
30V  
IF(AV)  
3A  
<0.01Ω  
VRRM  
30V  
70A  
VF(MAX)  
0.51V  
SCHOTTKY  
3
1
D2PAK  
TO-263  
(suffix ”T4”)  
DESCRIPTION:  
This product associates a Power MOSFET of the  
third generation of STMicroelectronics unique  
”Single Feature Size” strip-based process and a  
low drop Schottky diode. The transistor shows the  
best trade-off between on-resistance and gate  
charge. Used as low side in buck regulators, the  
product is the best solution in terms of conduction  
losses and space saving.  
INTERNAL SCHEMATIC DIAGRAM  
MOSFET ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 kΩ)  
Gate-source Voltage  
Value  
30  
Unit  
V
V
VDGR  
VGS  
ID  
30  
± 22  
70  
V
o
Drain Current (continuous) at Tc = 25 C  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
50  
A
I
DM(• )  
Drain Current (pulsed)  
280  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
100  
W
Derating Factor  
0.67  
-65 to 175  
175  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
Max. Operating Junction Temperature  
(•) Pulse width limited by safe operating area  
SCHOTTKY ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
VRRM  
Repetitive Peak Reverse Voltage  
IF(RMS) RMS Forward Current  
20  
A
o
IF(AV)  
Average Forward Current  
TL=125 C  
=0.5  
3
A
δ
IFSM  
Surge Non Repetitive Forward Current  
Critical Rate Of Rise Of Reverse Voltage  
tp= 10 ms  
Sinusoidal  
75  
A
dv/dt  
10000  
V/µs  
1/6  
April 2000  
STB70NFS03L  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-case  
Rthj-amb Thermal Resistance Junction-ambient  
Max  
Max  
1.5  
62.5  
175  
oC/W  
oC/W  
oC  
Tl  
Maximum Lead Temperature For Soldering Purpose  
(Tcase = 25 oC unless otherwisespecified)  
ELECTRICAL CHARACTERISTICS  
OFF  
Symbol  
Parameter  
Test Conditions  
ID = 250 µA VGS = 0  
Min.  
Typ.  
Max.  
Unit  
V(BR)DSS Drain-source  
30  
V
Breakdown Voltage  
Zero Gate Voltage VDS = Max Rating  
Drain Current (VGS = 0) VDS = Max Rating  
Gate-body Leakage VGS = ± 20 V  
IDSS  
IGSS  
1
10  
µA  
A
µ
o
Tc =125 C  
± 100  
nA  
Current (VDS = 0)  
ON ( )  
Symbol  
VGS(th)  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Gate Threshold Voltage VDS = VGS ID = 250 µA  
1
V
RDS(on)  
Static Drain-source On VGS = 10 V  
Resistance VGS = 5 V  
ID = 35 A  
ID = 18 A  
0.008  
0.015 0.018  
0.01  
Ω
Ω
ID(on)  
On State Drain Current VDS > ID(on) x RDS(on)max  
VGS = 10 V  
70  
A
DYNAMIC  
Symbol  
Parameter  
Forward  
Test Conditions  
VDS > ID(on) x RDS(on)max ID =35 A  
Min.  
Typ.  
Max.  
Unit  
gfs ( )  
40  
S
Transconductance  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
VDS = 25 V f = 1 MHz VGS = 0  
1470  
490  
110  
pF  
pF  
pF  
Reverse  
Transfer  
Capacitance  
2/6  
STB70NFS03L  
ELECTRICAL CHARACTERISTICS  
(continued)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
td(on)  
tr  
Turn-on Delay Time  
Rise Time  
VDD = 15 V  
RG = 4.7  
ID = 35 A  
VGS = 10 V  
20  
350  
ns  
ns  
Ω
(Resistive Load, see fig. 3)  
Qg  
Qgs  
Qgd  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
VDD = 24 V ID = 46 A VGS = 10 V  
35  
5
10  
45  
nC  
nC  
nC  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
td(off)  
tf  
Off-voltage Rise Time  
Fall Time  
VDD = 24 V  
RG = 4.7 Ω  
ID = 35 A  
VGS = 10 V  
35  
65  
ns  
ns  
(Resistive Load, see fig. 3)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Source-drain Current  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
ISD  
70  
280  
A
A
ISDM ( )  
Source-drain  
(pulsed)  
Current  
•
VSD ( ) Forward On Voltage  
ISD = 70 A VGS = 0  
1.5  
V
trr  
Reverse  
Time  
Reverse  
Charge  
Reverse  
Current  
Recovery ISD = 70 A  
VDD = 15V  
Recovery (see test circuit, figure 5)  
di/dt = 100 A/µs  
Tj = 150 C  
70  
105  
2.4  
ns  
o
Qrr  
nC  
IRRM  
Recovery  
Α
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %  
( ) Pulse width limited by safe operating area  
•
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
0.03  
0.38  
Max.  
Unit  
o
IR( )  
Reversed  
Current  
Leakage TJ= 25 C  
VR=30V  
VR=30V  
0.2  
100  
mA  
mA  
o
TJ= 125 C  
o
VF( )  
Forward Voltage drop  
TJ= 25 C  
IF=3A  
IF=3A  
0.51  
0.46  
V
V
o
TJ= 125 C  
3/6  
STB70NFS03L  
Fig. 1:  
Fig. 2:  
UnclampedInductive Waveform  
Unclamped Inductive Load Test Circuit  
Fig. 3: Switching Times Test Circuits For  
Fig. 4: Gate Charge test Circuit  
Resistive Load  
Fig. 5:  
Test Circuit For InductiveLoad Switching  
And Diode Recovery Times  
4/6  
STB70NFS03L  
2
TO-263 (D PAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.027  
0.044  
0.017  
0.047  
0.352  
0.393  
0.192  
0.590  
0.050  
0.055  
MAX.  
0.181  
0.106  
0.036  
0.067  
0.023  
0.053  
0.368  
0.409  
0.208  
0.624  
0.055  
0.068  
A
A1  
B
2.49  
0.7  
2.69  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.21  
8.95  
10  
0.6  
C2  
D
1.36  
9.35  
10.4  
5.28  
15.85  
1.4  
E
G
4.88  
15  
L
L2  
L3  
1.27  
1.4  
1.75  
D
A
C
C2  
DETAIL”A”  
DETAIL”A”  
A1  
B
B2  
E
G
L3  
L2  
L
P011P6/E  
5/6  
STB70NFS03L  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
2000 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil -China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
6/6  

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