STB70NFS03LT4 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 30V V（ BR ） DSS | 70A I（ D） | TO- 263AB\n
| 型号： | STB70NFS03LT4 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB
|
| 文件： | 总9页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB70NFS03L
N-CHANNEL 30V - 0.008
Ω - 70A D2PAK
STripFET MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
V
R
DS(on)
I
D
MOSFET
DSS
30 V
< 0.01 Ω
70 A
I
V
V
F(MAX)
SCHOTTKY
3
F(AV)
RRM
1
3 A
30 V
0.51 V
D2PAK
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
This product associates a Power MOSFET of the
third genaration of STMicroelectronics unique “ Sin-
gle Feature Size” strip-based process and a low
drop Schottky diode. The transistor shows the best
trade-off between on-resistance and gate charge.
Used as low side in buck regulators, the product is
the solution in terms of conduction losses and space
saving.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Drain-source Voltage (V = 0)
Value
30
Unit
V
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
30
DGR
GS
V
Gate- source Voltage
± 20
70
V
GS
I
Drain Current (continuos) at T = 25°C
A
D
C
I
Drain Current (continuos) at T = 100°C
50
A
D
C
I
(●)
Drain Current (pulsed)
280
A
DM
P
Total Dissipation at T = 25°C
100
W
TOT
C
Derating Factor
0.67
–65 to 175
175
W/°C
°C
°C
T
stg
Storage Temperature
T
Max. Operating Junction Temperature
j
(●) Pulse width limited by safe operating area
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Repetitive Peak Reverse Voltage
RMS Forward Current
Value
20
Unit
V
V
RRM
I
20
A
F(RMS)
I
Average Forward Current
TL = 125°C
δ = 0.5
3
A
F(AV)
I
Surge Non Repetitive Forward Current
Critical Rate Of Rise Of Reverse Voltage
tp = 10 ms
Sinusoidal
75
A
FSM
dv/dt
10000
V/µs
April 2001
1/9
STB70NFS03L
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
1.5
62.5
300
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
T
l
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
35
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
450
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
= 250 µA, V = 0
Min.
Typ.
Max.
Unit
V
I
30
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
1
µA
µA
nA
DSS
DS
DS
GS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
10
C
I
Gate-body Leakage
= ± 20V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
V
GS(th)
DS(on)
V
V
V
= V , I = 250µA
Gate Threshold Voltage
1
DS
GS
GS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 35 A
0.008
0.015
0.01
Ω
D
= 5V, I = 18 A
0.018
Ω
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
= 25V I = 35 A
40
S
DS
, D
C
C
V
= 25V, f = 1 MHz, V = 0
Input Capacitance
Output Capacitance
1470
490
pF
pF
iss
DS
GS
oss
Reverse Transfer
Capacitance
C
rss
110
pF
2/9
STB70NFS03L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
= 15V, I = 35A
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
V
20
ns
d(on)
DD
D
R
= 4.7Ω V
= 4.5V
GS
G
t
Rise Time
350
ns
r
(see test circuit, Figure 3)
Q
V
V
= 24V, I = 46A,
= 10V
45
nC
nC
nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
35
5
10
g
DD
GS
D
Q
Q
gs
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
V
R
= 15V, I = 35A,
35
65
ns
ns
Turn-off-Delay Time
Fall Time
d(off)
DD
D
t
= 4.7Ω, V = 4.5V
GS
(see test circuit, Figure 3)
f
G
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
70
Unit
A
I
Source-drain Current
SD
I
(1)
(2)
Source-drain Current (pulsed)
Forward On Voltage
280
1.5
A
SDM
V
I
I
= 70A, V = 0
V
SD
SD
SD
GS
t
= 70A, di/dt = 100A/µs,
= 20V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
75
110
2.9
ns
nC
A
rr
Q
V
rr
RRM
DD
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
3/9
STB70NFS03L
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
STB70NFS03L
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STB70NFS03L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STB70NFS03L
2
D PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
8º
3
7/9
1
STB70NFS03L
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8 13.2 0.504 0.520
20.2 0795
24.4 26.4 0.960 1.039
100 3.937
0.059
30.4
1.197
BASE QTY
BULK QTY
TAPE MECHANICAL DATA
1000
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
K0
P0
P1
P2
R
3.9
11.9 12.1 0.468 0.476
1.9
50
2.1 0.075 0.082
1.574
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
8/9
STB70NFS03L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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9/9
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