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STB160NF3LL [STMICROELECTRONICS]

N-CHANNEL 30V - 0.0026 ohm - 160A D2PAK STripFET⑩ II POWER MOSFET; N沟道30V - 0.0026欧姆 - 160A D2PAK STripFET⑩ II功率MOSFET
STB160NF3LL
型号： STB160NF3LL
厂家： ST    ST
描述：

N-CHANNEL 30V - 0.0026 ohm - 160A D2PAK STripFET⑩ II POWER MOSFET
N沟道30V - 0.0026欧姆 - 160A D2PAK STripFET⑩ II功率MOSFET
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STB160NF3LL  
2
N-CHANNEL 30V - 0.0026 Ω - 160A D PAK  
STripFET™ II POWER MOSFET  
PRELIMINARY DATA  
V
R
I
D
TYPE  
DSS  
DS(on)  
ST160NF3LL  
30 V  
<0.003 Ω  
160 A  
■
■
■
■
■
■
TYPICAL R (on) = 0.0026 Ω  
DS  
LOW THRESHOLD DRIVE  
ULTRA LOW ON-RESISTANCE  
LOGIC LEVEL DEVICE  
3
100% AVALANCHE TESTED  
1
2
SURFACE-MOUNTING D PAK (TO-263)  
POWER PACKAGE IN TUBE (NO SUFFIX) OR  
IN TAPE & REEL (SUFFIX “T4”)  
2
D PAK  
TO-263  
(Suffix “T4”)  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
■
■
■
HIGH CURRENT, HIGH SWITCHING SPEED  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
SOLENOID AND RELAY DRIVERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R  
Gate- source Voltage  
= 20 kΩ)  
GS  
30  
V
DGR  
V
± 15  
160  
160  
640  
300  
2
V
GS  
Drain Current (continuous) at T = 25°C  
I ( )  
D
A
C
I
D
Drain Current (continuous) at T = 100°C  
A
C
I
(•)  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
W
W/°C  
J
tot  
C
Derating Factor  
(1)  
E
Single Pulse Avalanche Energy  
Storage Temperature  
1.2  
AS  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
o
(•) Pulse width limited by safe operating area.  
(1) Starting T = 25 C, I = 80A, V  
= 20V  
DD  
j
D
(*) Current Limited by Package  
May 2002  
1/7  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  
STB160NF3LL  
THERMAL DATA  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Maximum Lead Temperature For Soldering Purpose  
Max  
Max  
0.5  
62.5  
300  
°C/W  
°C/W  
°C  
T
l
ELECTRICAL CHARACTERISTICS (T  
= 25 °C unless otherwise specified)  
case  
OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
= 250 µA = 0  
Min.  
Typ.  
Max.  
Unit  
I
V
GS  
V
30  
V
D
(BR)DSS  
Breakdown Voltage  
V
= Max Rating  
= Max Rating T = 125°C  
Zero Gate Voltage  
I
1
10  
µA  
µA  
DS  
DSS  
Drain Current (V  
= 0)  
V
GS  
DS  
C
Gate-body Leakage  
V
GS  
= ± 15 V  
I
±100  
nA  
GSS  
Current (V  
= 0)  
DS  
(*)  
ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
GS(th)  
V
= V  
GS  
I = 250 µA  
D
Gate Threshold Voltage  
1
V
DS  
V
V
= 10 V  
= 4.5 V  
I
= 80 A  
= 80 A  
R
Static Drain-source On  
Resistance  
0.0026 0.0030  
0.0032 0.0043  
Ω
Ω
GS  
GS  
D
DS(on)  
I
D
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
= 15 V =80 A  
Min.  
Typ.  
Max.  
Unit  
(*)  
V
DS  
I
D
g
fs  
Forward Transconductance  
60  
S
C
V
= 25V f = 1 MHz V = 0  
GS  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
6200  
1720  
300  
pF  
pF  
pF  
iss  
DS  
C
oss  
C
rss  
2/7  
STB160NF3LL  
ELECTRICAL CHARACTERISTICS (continued)  
(*)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
= 15 V = 80 A  
Min.  
Typ.  
Max.  
Unit  
V
R
I
D
t
Turn-on Time  
Rise Time  
50  
350  
ns  
ns  
DD  
= 4.7 Ω  
d(on)  
V
= 4.5 V  
t
r
G
GS  
(Resistive Load, Figure 3)  
Q
g
V
=24V I =160A V =5V  
GS  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
95  
25  
45  
125  
nC  
nC  
nC  
DD  
D
Q
gs  
Q
gd  
(*)  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
= 15 V  
Min.  
Min.  
Typ.  
Max.  
Unit  
V
R
I
= 80 A  
D
= 4.5 V  
Turn-off Delay Time  
Fall Time  
150  
120  
ns  
ns  
DD  
= 4.7Ω,  
t
d(off)  
V
GS  
G
t
f
(Resistive Load, Figure 3)  
(*)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
Unit  
I
SD  
Source-drain Current  
Source-drain Current (pulsed)  
160  
640  
A
A
(•)  
I
SDM  
(*)  
I
I
= 160 A  
V
= 0  
V
Forward On Voltage  
1.3  
V
SD  
SD  
GS  
SD  
t
rr  
= 160 A  
= 15 V  
di/dt = 100A/µs  
T = 150°C  
j
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
90  
200  
5
ns  
nC  
A
Q
V
rr  
DD  
I
(see test circuit, Figure 5)  
RRM  
(*)  
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
(•)  
Pulse width limited by T  
jmax  
3/7  
STB160NF3LL  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuits For Resistive  
Fig. 4: Gate Charge test Circuit  
Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
4/7  
STB160NF3LL  
2
D PAK MECHANICAL DATA  
mm.  
inch.  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.001  
0.028  
0.045  
0.018  
0.048  
0.352  
TYP.  
0.181  
0.106  
0.009  
0.037  
0.067  
0.024  
0.054  
0.368  
A
A1  
A2  
B
2.49  
0.03  
0.7  
2.69  
0.23  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.21  
8.95  
0.6  
C2  
D
1.36  
9.35  
D1  
E
8
0.315  
0.334  
10  
10.4  
0.394  
0.409  
E1  
G
8.5  
4.88  
15  
5.28  
15.85  
1.4  
0.192  
0.591  
0.050  
0.055  
0.094  
0.208  
0.624  
0.055  
0.069  
0.126  
L
L2  
L3  
M
1.27  
1.4  
1.75  
3.2  
2.4  
R
0.4  
0.015  
V2  
0°  
8°  
0°  
8°  
5/7  
STB160NF3LL  
D2PAK FOOTPRINT  
TUBE SHIPMENT (no suffix)*  
TAPE AND REEL SHIPMENT (suffix ”T4”)*  
REEL MECHANICAL DATA  
mm  
inch  
MAX.  
DIM.  
MIN.  
MAX.  
MIN.  
A
B
C
D
G
N
T
330  
12.992  
0.520  
1.039  
1.197  
1.5  
12.8  
20.2  
24.4  
100  
0.059  
0.504  
0.795  
0.960  
3.937  
13.2  
26.4  
30.4  
BASE QTY  
BULK QTY  
1000  
1000  
TAPE MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
10.5  
15.7  
1.5  
MAX.  
10.7  
15.9  
1.6  
MIN.  
0.413  
0.618  
0.059  
0.062  
0.065  
0.449  
0.189  
0.153  
0.468  
0075  
MAX.  
0.421  
0.626  
0.063  
0.063  
0.073  
0.456  
0.197  
0.161  
0.476  
0.082  
A0  
B0  
D
D1  
E
1.59  
1.65  
11.4  
4.8  
1.61  
1.85  
11.6  
5.0  
F
K0  
P0  
P1  
P2  
R
3.9  
4.1  
11.9  
1.9  
12.1  
2.1  
50  
1.574  
T
0.25  
23.7  
0.35  
24.3  
.0.0098 0.0137  
0.933 0.956  
W
* on sales type  
6/7  
STB160NF3LL  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
2002 STMicroelectronics - All Rights Reserved  
All other names are the property of their respective owners.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
7/7  

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