STB16NK65Z-S [STMICROELECTRONICS]
N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET; N沟道650V - 0.38OHM -13A TO- 220 I2SPAK齐纳 - 保护超网MOSFET
| 型号： | STB16NK65Z-S |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET |
| 文件： | 总12页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP16NK65Z
STB16NK65Z-S
N-CHANNEL 650V - 0.38Ω - 13A TO-220 / I2SPAK
Zener - Protected SuperMESH™ MOSFET
Table 1: General Features
Figure 1: Package
TYPE
V
R
I
D
Pw
DSS
DS(on)
STP16NK65Z
STB16NK65Z-S 650 V
650 V
< 0.50 Ω 13 A 190 W
< 0.50 Ω 13 A 190 W
■ TYPICAL R (on) = 0.38Ω
DS
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
REPEATIBILITY
3
2
1
3
2
1
I²SPAK
TO-220
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
stripbased PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capabil-
ity for the most demanding applications. Such se-
ries complements ST full range of high voltage
MOSFETs including revolutionary MDmesh™
products.
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES
Table 2: Order Codes
SALES TYPE
STP16NK65Z
STB16NK65Z-S
MARKING
P16NK65Z
B16NK65Z
PACKAGE
TO-220
PACKAGING
TUBE
I²SPAK
TUBE
Rev. 3
September 2005
1/12
STP16NK65Z - STB16NK65Z-S
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
650
650
± 30
13
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
V
GS
V
GS
Gate- source Voltage
V
I
D
Drain Current (continuous) at T = 25°C
A
C
I
Drain Current (continuous) at T = 100°C
8.19
52
A
D
C
I
(*)
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
190
1.51
6000
4.5
W
TOT
C
Derating Factor
W/°C
V
V
Gate source EDS (HBM-C=100pF, R=1.5kΩ)
Peak Diode Recovery voltage slope
ESD(G-S)
dv/dt (1)
V/ns
T
T
stg
Operating Junction Temperature
Storage Temperature
j
-55 to 150
°C
(*) Pulse width limited by safe operating area
(1) I ≤ 13 A, di/dt ≤ 200 A/µs, V ≤ V
,T ≤ T
j JMAX
SD
DD
(BR)DSS
Table 4: Thermal Data
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
0.66
62.5
300
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
T
l
Table 5: Avalanche Characteristics
Symbol
Parameter
Max. Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
13
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
350
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
Table 6: Gate-Source Zener Diode
Symbol
BV
Parameter
Test Condition
Igs=± 1mA (Open Drain)
Min.
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
30
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied fromgate to source. In this respect the Zener voltage ia appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/12
STP16NK65Z - STB16NK65Z-S
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Drain-source
I
D
= 1 mA, V = 0
650
V
(BR)DSS
GS
Breakdown Voltage
Zero Gate Voltage
I
V
V
= Max Rating
= Max Rating, T = 125 °C
1
50
µA
µA
DSS
DS
Drain Current (V = 0)
GS
DS
C
I
Gate-body Leakage
V
GS
= ± 20 V
±10
µA
GSS
Current (V = 0)
DS
V
Gate Threshold Voltage
V
V
= V , I = 100 µA
4.5
V
3
3.75
0.38
GS(th)
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 6.5 A
0.50
Ω
DS(on)
GS
D
Table 8: Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
= 15 V I = 6.5 A
12
S
DS
, D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V, f = 1 MHz, V = 0
2750
275
60
pF
pF
pF
iss
GS
C
oss
C
rss
C
(*) Equivalent Output
Capacitance
V
= 0V, V = 6.5 V to 520 V
188
pF
oss eq.
GS
DD
DS
t
t
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
= 325 V, I = 6.5 A
25
25
68
17
ns
ns
ns
ns
d(on)
D
t
r
R = 4.7Ω V = 10 V
G GS
(see Figure 17)
d(off)
t
f
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
= 520 V, I = 13 A,
= 10 V
89
18
45
nC
nC
nC
g
DD
D
Q
gs
gd
GS
Q
(see Figure 20)
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
13
52
A
A
SD
(2)
I
SDM
V
(1)
I
I
= 13 A, V
= 0
GS
Forward On Voltage
1.6
V
SD
SD
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 13 A, di/dt = 100 A/µs,
= 100 V, T = 25°C
500
5.2
21
ns
µC
A
SD
Q
V
DD
(see Figure 18)
rr
j
I
RRM
t
Q
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
V
= 13 A, di/dt = 100 A/µs,
= 100 V, T = 150°C
DD j
615
7
22.5
ns
µC
A
rr
SD
rr
I
(see Figure 18)
RRM
(1) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
(2) Pulse width limited by safe operating area
(*) C
is defined as a constant equivalent capacitance giving the same charging time as C
when V increases from 0 to 80% V
oss DS DSS
oss eq.
3/12
STP16NK65Z - STB16NK65Z-S
Figure 3: Safe Operating Area
Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
4/12
STP16NK65Z - STB16NK65Z-S
Figure 9: Gate Charge vs Gate-source Voltage
Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 11: Dource-Drain Diode Forward Char-
acteristics
Figure 14: Normalized BVdss vs Temperature
5/12
STP16NK65Z - STB16NK65Z-S
Figure 15: Avalanche Energy vs Starting Tj
j
6/12
STP16NK65Z - STB16NK65Z-S
Figure 16: Unclamped Inductive Load Test Cir-
cuit
Figure 19: Unclamped Inductive Wafeform
Figure 17: Switching Times Test Circuit For
Resistive Load
Figure 20: Gate Charge Test Circuit
Figure 18: Test Circuit For Inductive Load
Switching and Diode Recovery Times
7/12
STP16NK65Z - STB16NK65Z-S
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com
8/12
STP16NK65Z - STB16NK65Z-S
2
I SPAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.40
2.49
0.70
1.14
0.45
1.23
8.95
10.00
4.88
16.7
1.27
13.82
TYP
MAX.
4.60
2.69
0.93
1.70
0.60
1.36
9.35
10.40
5.28
17.5
1.4
MIN.
0.173
0.098
0.027
0.045
0.018
0.048
0.352
0.394
0.192
0.657
0.05
MAX.
0.181
0.106
0.037
0.067
0.024
0.053
0.368
0.409
0.208
0.689
0.055
0.568
A
A1
B
B2
C
C2
D
E
G
L
L2
L3
14.42
0.544
9/12
STP16NK65Z - STB16NK65Z-S
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
10/12
STP16NK65Z - STB16NK65Z-S
Table 10: Revision History
Date
Revision
Description of Changes
06-Aug-2004
02-Sep-2004
06-Sep-2005
1
2
3
First Release.
Complete Version
Inserted Ecopack indication
11/12
STP16NK65Z - STB16NK65Z-S
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2005 STMicroelectronics - All Rights Reserved
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12/12
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