STB16NS25 [STMICROELECTRONICS]
N-CHANNEL 250V - 0.23ohm - 16A D2PAK MESH OVERLAY⑩ MOSFET; N沟道250V - 0.23ohm - 16A D2PAK MESH OVERLAY⑩ MOSFET
| 型号： | STB16NS25 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 250V - 0.23ohm - 16A D2PAK MESH OVERLAY⑩ MOSFET |
| 文件： | 总9页 (文件大小：458K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB16NS25
N-CHANNEL 250V - 0.23Ω - 16A D2PAK
MESH OVERLAY™ MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STB16NS25
250 V
< 0.28 Ω
16 A
■
■
■
TYPICAL R (on) = 0.23 Ω
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
3
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
2
D PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V
DS
Drain-source Voltage (V = 0)
250
GS
V
Drain-gate Voltage (R = 20 kΩ)
250
V
DGR
GS
V
Gate- source Voltage
± 20
V
GS
I
Drain Current (continuos) at T = 25°C
16
A
D
C
I
Drain Current (continuos) at T = 100°C
11
A
D
C
I
( )
Drain Current (pulsed)
64
A
DM
P
TOT
Total Dissipation at T = 25°C
140
W
C
Derating Factor
1
5
W/°C
V/ns
°C
°C
dv/dt (1)
Peak Diode Recovery voltage slope
Storage Temperature
T
stg
–65 to 175
175
T
Max. Operating Junction Temperature
j
(1) I ≤ 16A, di/dt≤300 A/µs, V ≤ V
, Tj≤T
jMAX
(•)Pulse width limited by safe operating area
February 2003
SD
DD
(BR)DSS
1/9
STB16NS25
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
0.9
62.5
300
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
T
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
16
A
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
200
mJ
AS
(starting T = 25 °C, I = I , V = 28 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 250 µA, V = 0
250
V
(BR)DSS
D
GS
Breakdown Voltage
I
V
V
V
= Max Rating
DS
1
µA
µA
nA
DSS
Zero Gate Voltage
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
50
DS
GS
C
I
Gate-body Leakage
= ± 20 V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
R
V
V
= V , I = 250µA
Gate Threshold Voltage
2
GS(th)
DS
GS
GS
D
Static Drain-source On
Resistance
= 10V, I = 8 A
0.23
0.28
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
> I
x R
DS(on)max,
14
15
S
fs
DS
D(on)
I
= 8 A
D
C
C
V
= 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
1270
190
75
pF
pF
pF
iss
oss
C
rss
Reverse Transfer
Capacitance
2/9
STB16NS25
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 125 V, I = 8 A
Turn-on Delay Time
15
ns
d(on)
DD
D
= 4.7Ω V = 10 V
G
GS
t
Rise Time
25
ns
r
(see test circuit, Figure 3)
Q
V
V
= 200V, I = 16 A,
= 10V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
60
8
80
nC
nC
nC
g
DD
GS
D
Q
gs
Q
22
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-off- Delay Time
Fall Time
V
= 125V, I = 8 A,
75
35
ns
ns
d(off)
DD
D
t
f
R = 4.7Ω, V = 10V
G GS
(see test circuit, Figure 3)
t
Off-voltage Rise Time
Fall Time
Cross-over Time
V
= 200V, I = 16 A,
25
30
55
ns
ns
ns
r(Voff)
clamp
D
t
f
R = 4.7Ω, V = 10V
G GS
(see test circuit, Figure 5)
t
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
16
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
64
A
SDM
V
I
I
= 16 A, V = 0
1.5
V
SD
SD
SD
GS
t
= 16 A, di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
270
1.5
ns
µC
A
rr
V
= 33V, T = 150°C
j
DD
Q
rr
(see test circuit, Figure 5)
I
11.5
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/9
STB16NS25
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
STB16NS25
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
5/9
STB16NS25
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STB16NS25
D2PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
3
7/9
1
STB16NS25
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
0.059
12.8
20.2
24.4
100
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
8/9
STB16NS25
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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