STB16NK60Z-S [STMICROELECTRONICS]
N-CHANNEL 600V - 0.38з - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH⑩ MOSFET; N沟道600V - 0.38з - 14A TO- 220 / I2SPAK / TO- 247齐纳保护SuperMESH⑩ MOSFET
| 型号： | STB16NK60Z-S |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 600V - 0.38з - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH⑩ MOSFET |
| 文件： | 总11页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP16NK60Z - STB16NK60Z-S
STW16NK60Z
N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I2SPAK / TO-247
Zener-Protected SuperMESH™ MOSFET
TYPE
V
R
I
D
Pw
DSS
DS(on)
STP16NK60Z
STB16NK60Z-S
STW16NK60Z
600 V < 0.42 Ω 14 A
600 V < 0.42 Ω 14 A
600 V < 0.42 Ω 14 A
190 W
190 W
190 W
3
2
1
3
■
■
■
■
■
■
TYPICAL R (on) = 0.38 Ω
DS
2
1
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
2
I SPAK
TO-220
3
2
1
TO-247
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
IDEAL FOR OFF-LINE POWER SUPPLIES
ORDER CODE
PART NUMBER
MARKING
P16NK60Z
B16NK60Z
PACKAGE
PACKAGING
TUBE
STP16NK60Z
STB16NK60Z-S
STW16NK60Z
TO-220
2
TUBE
I SPAK
W16NK60Z
TO-247
TUBE
March 2004
1/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
600
600
± 30
14
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
V
GS
V
Gate- source Voltage
V
GS
I
D
Drain Current (continuous) at T = 25°C
A
C
I
D
Drain Current (continuous) at T = 100°C
8.8
A
C
I
( )
Drain Current (pulsed)
56
A
DM
P
Total Dissipation at T = 25°C
190
1.51
6000
4.5
W
TOT
C
Derating Factor
W/°C
V
V
Gate source ESD (HBM-C= 100pF, R= 1.5KΩ)
Peak Diode Recovery voltage slope
ESD(G-S)
dv/dt (1)
V/ns
T
T
stg
Operating Junction Temperature
Storage Temperature
j
-55 to 150
°C
( ) Pulse width limited by safe operating area
(1) I ≤ 14 A, di/dt ≤ 200 A/µs, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220/ I²SPAK
TO-247
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
0.66
300
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
62.5
50
T
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
14
A
(pulse width limited by T max)
j
E
AS
Single Pulse Avalanche Energy
360
mJ
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Min.
30
Typ.
Max.
Unit
Gate-Source Breakdown Igs=± 1mA (Open Drain)
Voltage
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 1 mA, V = 0
600
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
= Max Rating
= Max Rating, T = 125 °C
1
50
µA
µA
DSS
DS
DS
Drain Current (V = 0)
GS
C
I
Gate-body Leakage
V
= ± 20V
±10
µA
GSS
GS
Current (V = 0)
DS
V
V
V
= V , I = 100 µA
Gate Threshold Voltage
3
3.75
0.38
4.5
V
GS(th)
DS
GS
GS
D
R
DS(on)
Static Drain-source On
Resistance
= 10V, I = 7 A
0.42
Ω
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
V
= 15 V I = 7 A
12
S
fs
DS
, D
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
2650
285
62
pF
pF
pF
iss
DS
GS
oss
rss
C
(3) Equivalent Output
Capacitance
= 0V, V = 0V to 480V
158
pF
oss eq.
GS
DD
DS
t
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
R
= 480 V, I = 14 A
30
25
70
15
ns
ns
ns
ns
d(on)
D
t
= 4.7Ω V = 10 V
GS
r
G
t
(Resistive Load see, Figure 3)
d(off)
t
f
Q
V
V
= 480V, I = 14 A,
= 10V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
86
17
46
nC
nC
nC
g
DD
GS
D
Q
gs
Q
gd
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
14
56
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
= 14 A, V = 0
Forward On Voltage
1.6
V
SD
SD
GS
t
Q
I
V
= 14 A, di/dt = 100 A/µs
SD
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
490
5.4
22
ns
µC
A
rr
= 100 V, T = 25°C
rr
DD
j
I
(see test circuit, Figure 5)
RRM
t
Q
I
V
= 14 A, di/dt = 100 A/µs
SD
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
585
7
24
ns
µC
A
rr
= 100 V, T = 150°C
rr
DD
j
I
(see test circuit, Figure 5)
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
V
is defined as a constant equivalent capacitance giving the same charging time as C
when V increases from 0 to 80%
oss DS
oss eq.
.
DSS
3/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
Safe Operating Area for TO-220/I²SPAK
Thermal Impedance for TO-220/I²SPAK
Safe Operating Area for TO-247
Thermal Impedance for TO-247
Output Characteristics
Transfer Characteristics
4/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
Static Drain-source On Resistance
Transconductance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
6/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
8/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
I2SPAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
2.49
0.70
1.14
0.45
1.23
8.95
10.00
4.88
16.7
1.27
13.82
MAX.
4.60
2.69
0.93
1.70
0.60
1.36
9.35
10.40
5.28
17.5
1.4
MIN.
0.173
0.098
0.027
0.045
0.018
0.048
0.352
0.394
0.192
0.657
0.05
MAX.
0.181
0.106
0.037
0.067
0.024
0.053
0.368
0.409
0.208
0.689
0.055
0.568
A
A1
B
B2
C
C2
D
E
G
L
L2
L3
14.42
0.544
9/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
TO-247 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.85
2.20
1.0
MAX.
5.15
MIN.
0.19
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
10/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
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11/11
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