LCP1511DRL [STMICROELECTRONICS]
PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION; 可编程瞬态电压抑制器SLIC保护
| 型号： | LCP1511DRL |
| 厂家： | 
ST |
| 描述： | PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION |
| 文件： | 总7页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
LCP1511D
Application Specific Discretes
A.S.D.™
PROGRAMMABLE TRANSIENT VOLTAGE
SUPPRESSOR FOR SLIC PROTECTION
FEATURES
DUAL PROGRAMMABLE TRANSIENT SUP-
PRESSOR.
WIDE NEGATIVE FIRING VOLTAGE RANGE :
VMGL = -80V max.
LOW DYNAMIC SWITCHING VOLTAGES :
VFP and VDGL
.
LOW GATE TRIGGERING CURRENT :
IGT = 5mA max.
PEAK PULSE CURRENT :
IPP = 30A for 10/1000µs surge.
HOLDING CURRENT :
IH = 150mA.
SO-8
DESCRIPTION
This device has been especially designed to pro-
tect subscriber line card interfaces (SLIC) against
transient overvoltages.
SCHEMATIC DIAGRAM
Positive overloads are clipped with 2 diodes. Neg-
ative surges are suppressed by 2 thyristors, their
breakdown voltage being referenced to
-VBAT through the gate.
This component presents a very low gate
trigge-ring current (IGT) in order to reduce the cur-
rent consumption on printed circuit board during
the firing phase.
A particular attention has been given to the internal
wire bonding. The “4-point” configuration ensures
reliable protection, eliminating the overvoltage in-
troduced by the parasitic induances of the wiring
(Ldi/dt), especially for very st transients.
TIP
GATE
NC
TIP
1
2
3
4
8
7
6
5
GND
GND
RING
COMPLIES WITH THE FOLLOWING STANDARDS
RING
CCITT K20 :
VDE 03 :
VDE 0878 :
I3124 :
10/700µs
5/310µs
1kV
25A
10/700µs
5/310µs
2kV
38A (*)
1.2/50µs
1/20µs
1.5kV
40A
0.5/700µs
0.2/310µs
1kV
25A
FCC part 68 :
BELLCORE
TR-NWT-001089 : 2/10µs
2/10µs
2/10µs
2/10µs
2.5kV
170A (*)
2.5kV
170A (*)
(*) with series resistors or PTC.
TM: ASD is trademarks of STMicroelectronics.
October 2003 - Ed: 4
1/7
LCP1511D
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C)
Symbol
Parameter
Value
Unit
IPP
Peak pulse current
(see note 1)
10/1000µs
5/310µs
2/10µs
30
38
170
A
ITSM
IGSM
Non repetitive surge peak on-state current
(F = 50Hz)
tp = 10ms
t = 1s
8
3.5
A
Maximum gate current (half sine wave tp = 10ms)
2
A
V
VMLG
VMGL
Maximum voltage LINE / GROUND
Maximum voltage GATE / LINE
-100
-80
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 55 to + 150
150
°C
TL
Maximum lead temperature for soldering during 10s
260
°C
Note 1 : Pulse waveform :
% I
PP
10/1000µs
5/310µs
2/10µs
t =10µs
t =1000µs
p
t =310µs
p
t =10µs
p
r
100
t =5µs
r
t =2µs
r
50
0
t
t
t
p
r
THERMAL RESISTANCE
Symbol
Parameter
Value
Unit
Rth (j-a) Junction to ambient
170
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
I
Symbol
IGT
Parameter
IF
Gate triggering current
IH
Holding current
IRM
Reverse leakage current LINE/GND
Reverse leakage current GATE/LINE
Reverse voltage LINE/GND
Forward drop voltage LINE/GND
Gate triggering voltage
IRG
VRM
VF
V
LG
V
GATEV
RM
V
F
IRM
VGT
VFP
IH
Peak forward voltage LINE/GND
VDGL Dynamic switching voltage GATE/LINE
VGATE GATE/GND voltage
VLG
C
LINE/GND voltage
IPP
Off-state capacitance LINE/GND
2/7
LCP1511D
1 - PARAMETERS RELATED TO THE DIODE LINE/GND (Tamb = 25 °C)
Symbol
VF
Test conditions
tp=500µs
Maximum
Unit
V
IF=5A
3
VFP
10/700µs 1.5kV
1.2/50µs 1.5kV
Rp=10Ω
Rp=10Ω
Rp=62Ω
5
7
12
V
(see note 1)
2/10µs
2.5kV
Note 1 : See test circuit 2 for VFP; Rp is the protection resistor located on the line card.
2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR (Tamb = 25°C)
Sym-
Test conditions
Min.
Max.
Unit
bol
IGT
IH
VGND/LINE = -48V
0.2
5
mA
mA
V
VGATE =-48V (see note 2)
at IGT
150
VGT
IRG
2.5
Tc=25°C
Tc=70°C
VRG =-75V
VRG =-75V
5
50
µA
VDGL
VGATE= -48V (see note 3)
10/700µs 1.5kV
1.2/50µs 1.5kV
Rp=10Ω
Rp=10Ω
Rp=62Ω
IPP=30A
IPP=30A
IPP=38A
10
20
25
V
2/10µs
2.5kV
Note 2 :
See the functional holding current (IH) test circuit 2.
3 - PARAMETERS RELATED TO DIODE AND PROTECTION THYRISTOR (Tamb = 25 °C)
Sym-
bol
Test conditions
Maximum
Unit
IRM
Tc=25°C VGATE/LINE = -1V
Tc=70°C VGATE/LINE = -1V
VRM =-75V
VRM =-75V
5
50
µA
APPLICATION NOTE
1
In order to take advantage of the “4 point” structure
of the LCP, the TIP and RING lines go across the
device. In such case, the device will eliminate the
overvoltages generated by the parasitic induc-
tances of the wiring (Ldi/dt), especially for very fast
transients.
8
7
6
TIP
IN
OUT
TIP
2
3
4
GATE
GND
NC
5
RING
IN
OUT
RING
3/7
LCP1511D
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 1 : GO-NO GO TEST
R
P
D.U.T.
VBAT
=
- 48V
Surge
generator
This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit.
TEST PROCEDURE :
- Adjust the current level at the IH value by short circuiting the D.U.T.
- Fire the D.U.T. with a surge current : IPP = 10A, 10/1000µs.
- The D.U.T. will come back to the off-state within a duration of 50ms max.
TEST CIRCUIT 2 FOR VFP AND VDGL PARAMETERS
R
(VP is defined in unload condition)
4
TIP
L
R
2
RING
R
3
R
V
P
C
C
2
1
1
G ND
Pulse (µs)
Vp
C1
(µF)
20
C2
(nF)
200
33
L
R1
(Ω)
50
R2
(Ω)
15
13
0
R3
(Ω)
25
25
3
R4
(Ω)
25
25
3
IPP
Rp
(Ω)
10
10
62
tr
10
1.2
2
tp
700
50
(V)
(µH)
0
(A)
30
30
38
1500
1500
2500
1
0
76
10
10
0
1.1
1.3
4/7
LCP1511D
FUNCTIONAL DESCRIPTION
LINE A PROTECTION :
– For positive surges versus GND, the diode D1
will conduct.
– For negative surges versus GND, the protection
device P1 will trigger at a voltage fixed by the
-VBAT reference.
TIP
LINE A
D
1
P
1
LINE B PROTECTION :
- VBAT
C
– For surges on line B, the operating mode is the
same, D2 or P2 is activated.
P
2
It is recommended to add a capacitor (C=220nF)
close to the gate of the LCP, in order to speed up
the triggering.
D
2
LINE B
RING
Surge peak current versus overload duration.
ITSM(A)
10
F=50Hz
Tj initial=25°C
9
8
7
6
5
4
3
2
1
t(s)
0
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
5/7
LCP1511D
APPLICATION CIRCUIT : typical SLIC protection concept
RING GENERATOR
- V
BAT
PTC
LINE A
T
E
S
T
RING
R
E
L
RELAY
SLIC
220
nF
A
Y
S
THBTxxxD
LINE B
LCP1511D
PTC
ORDER CODE
LCP 15 1 1
D
RL
RL : tape and reel
: tube
LINE CARD
PROTECTION
DYNAMIC
IH =150 mA
PACKAGE
1 : SO-8
VERSION
MARKING
Package
Type
Marking
SO-8
LCP1511D
CP151D
6/7
LCP1511D
Inches
PACKAGE MECHANICAL DATA
SO-8 Plastic
DIMENSIONS
Millimetres
REF.
Min. Typ. Max. Min. Typ. Max.
A
a1
a2
b
1.75
0.069
0.010
0.065
0.019
0.010
0.1
0.25 0.004
1.65
0.35
0.19
0.48 0.014
0.25 0.007
b1
C
0.50
0.020
c1
D
45° (typ)
4.8
5.8
5.0 0.189
6.2 0.228
0.197
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0 0.15
1.27 0.016
0.6
0.157
0.050
0.024
L
M
S
8° (max)
Weight = 0.08 g.
Packaging : Product supplied in antistatic tubes or
tape and reel .
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics - All rights reserved.
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7/7
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