LCP1531 [STMICROELECTRONICS]

Programmable transient voltage suppressor for SLIC protection;
LCP1531
型号: LCP1531
厂家: ST    ST
描述:

Programmable transient voltage suppressor for SLIC protection

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LCP1531  
Programmable transient voltage suppressor for SLIC protection  
Datasheet - production data  
Features  
Dual programmable transient suppressor  
Wide negative firing voltage range:  
V
Gn = -175 V max.  
Low dynamic switching voltages:  
VFP and VDGL  
SO-8  
Low gate triggering current: IGT = 5 mA max  
Peak pulse current: IPP = 37.5 A (5/310 µs)  
Holding current: IH = 150 mA min.  
Figure 1. LCP1531 functional diagram  
Low space consuming package  
TIP  
Gn  
1
TIP  
Benefits  
A Trisil™ is not subject to ageing and provides  
a fail-safe mode in short circuit for better  
protection.  
GND  
GND  
RING  
NC  
Trisils are used to help equipment to meet  
various standards such as YDT695, GR-1089  
and ITU-T K20/21.  
RING  
Trisils are UL94 V0 resin approved and are  
UL497B approved [file: E136224]).  
Description  
These devices are ideally suited to meet the  
protection requirement of VoIP SLICs located in  
next generation residential gateways. They can  
be used for protecting any ringing SLIC since they  
meet the protection standard requirements.  
Positive overvoltages are clamped by 2 diodes.  
Negative surges are suppressed by 2 thyristors,  
their breakdown voltage being referenced to -VBAT  
through the gate.  
These components present a very low gate  
triggering current (IGT) to reduce the current  
consumption on printed circuit board during the  
firing phase.  
TM: Trisil is a trademark of STMicroelectronics  
August 2013  
DocID13397 Rev 5  
1/10  
This is information on a product in full production.  
www.st.com  
Characteristics  
LCP1531  
1
Characteristics  
Table 1. Standards compliance  
Peak  
surge  
voltage  
Required  
peak  
current  
Minimum serial  
resistor to meet  
standard (Ω)  
Voltage  
waveform  
Current  
waveform  
Standard  
(V)  
(A)  
2500  
1000  
2/10 µs  
500  
100  
2/10 µs  
20  
30  
GR-1089 Core First level  
10/1000 µs  
10/1000 µs  
GR-1089 Core  
Second level  
5000  
1500  
2/10 µs  
2/10 µs  
500  
100  
2/10 µs  
40  
0
GR-1089 Core  
Intra-building  
2/10 µs  
6000  
1500  
150  
120  
0
ITU-T-K20/K21  
ITU-T-K20 (IEC 61000-4-2)  
IEC 61000-4-5  
10/700 µs  
1/60 ns  
5/310 µs  
37.5  
8000  
ESD contact discharge  
ESD air discharge  
0
0
15000  
4000  
4000  
10/700 µs  
1.2/50 µs  
100  
100  
5/310 µs  
8/20 µs  
67  
22  
TIA-968-A,  
1500  
800  
10/160 µs  
10/560 µs  
200  
100  
10/160 µs  
10/560 µs  
26  
17  
lightning surge type A  
TIA-968-A,  
1500  
9/720 µs  
37.5  
5/320 µs  
0
lightning surge type B  
Table 2. Thermal resistance  
Parameter  
Symbol  
Value  
120  
Unit  
R
Junction to ambient  
°C/W  
th(j-a)  
2/10  
DocID13397 Rev 5  
 
LCP1531  
Characteristics  
Table 3. Absolute ratings (T  
= 25 °C, unless otherwise specified)  
amb  
Symbol  
Parameter  
Value  
Unit  
10/1000 µs  
8/20 µs  
25  
65  
10/560 µs  
5/310 µs  
10/160 µs  
1/20 µs  
32  
I
Peak pulse current  
37.5  
45  
A
PP  
60  
2/10 µs  
100  
t = 20 ms  
t = 200 ms  
t = 1 s  
16  
9
Non-repetitive surge peak on-state current  
(50 Hz sinusoidal)  
I
A
TSM  
6
I
Maximum gate current (50 Hz sinusoidal)  
Negative battery voltage range  
t = 10 ms  
2
A
V
GSM  
V
-175  
Gn  
T
Storage temperature range  
-55 to +150  
-40 to +150  
stg  
°C  
°C  
T
Operating junction temperature range  
j
T
Maximum lead temperature for soldering during 10 s.  
260  
L
Figure 2. Electrical characteristics (definitions)  
I
Symbol  
Parameter  
IGT  
=
=
=
=
=
=
=
=
=
=
=
=
Gate triggering current  
Peak forward voltage LINE / GND  
Gate triggering voltage  
Forward drop voltage LINE /GND  
Reverse leakage current GATE / LINE  
Holding current  
Reverse voltage GATE / LINE  
Dynamic switching voltage GATE / LINE  
Peak pulse current  
Breakdown current  
Forward drop voltage LINE / GND  
Capacitance LINE /GND  
VFP  
VGT  
VF  
IRG  
IH  
VRG  
VDGL  
IPP  
IR  
V
R
V
F
V
I
R
I
H
VF  
C
I
PP  
Figure 3. Pulse waveform  
% I  
PP  
Pulse waveform  
10/1000 µs:  
tr = 10 µs  
100  
tp = 1000 µs  
50  
0
t
t
r
p
DocID13397 Rev 5  
3/10  
10  
 
Characteristics  
LCP1531  
Unit  
Table 4. Parameters related to the diode LINE / GND (T  
Test conditions  
= 25 °C)  
Max.  
amb  
Symbol  
V
I = 5 A  
t = 500 µs  
3
5
V
V
F
F
V
10/700 µs  
V
= 1.5 kV  
R = 15 Ω  
FP  
PP  
S
Table 5. Parameters related to the protection thyristors (T  
= 25 °C)  
Max.  
amb  
Symbol  
Test conditions  
Min.  
Unit  
I
V
V
V
V
= -48 V  
LINE  
0.1  
5
5
7
mA  
mA  
µA  
GT  
I
= -48 V  
= -75 V  
150  
H
Gn  
RG  
Gn  
I
RG  
(1)  
= -48 V  
V
DGL  
10/700 µs  
V
= 1.5 kV R = 15 Ω  
I = 27.5 A  
PP  
V
PP  
S
1. The oscillations with a time duration lower than 50 ns are not taken into account.  
Table 6. Parameters related to diode and protection thyristors (T  
= 25 °C,)  
amb  
Symbol  
Test conditions  
= -75 V  
Typ.  
Max.  
Unit  
I
V
= -1 V  
V
T = 25 °C  
5
µA  
R
Gn / LINE  
RM  
j
V
V
= -50 V, V  
= -2 V, V  
= 1 V, F = 1 MHz  
= 1 V, F = 1 MHz  
15  
35  
LINE  
LINE  
RMS  
RMS  
C
pF  
Table 7. Recommended gate capacitance  
Symbol  
Component  
Gate decoupling capacitance  
Min.  
Typ.  
Max.  
Unit  
C
100  
220  
nF  
G
4/10  
DocID13397 Rev 5  
LCP1531  
Technical information  
2
Technical information  
Figure 4. LCP1531 concept behavior  
Rs1  
L 1  
TIP  
V Tip  
ID1  
IG  
T1  
Th1  
D1  
Gn  
-Vbat  
GND  
GND  
L 2  
C
Rs2  
VRing  
RING  
Figure 4. shows the classical protection circuit using the LCP1531 crowbar concept. This  
topology has been developed to protect the new high voltage SLICs. It allows to program  
the negative firing threshold while the positive clamping value is fixed at GND.  
When a negative surge occurs on one wire (L1 for example) a current IG flows through the  
base of the transistor T1 and then injects a current in the gate of the thyristor Th1. Th1 fires  
and all the surge current flows through the ground. After the surge when the current flowing  
through Th1 becomes less negative than the holding current I , then Th1 switches off.  
H
When a positive surge occurs on one wire (L1 for example) the diode D1 conducts and the  
surge current flows through the ground.  
Figure 5. Example of PCB layout based on LCP1531 protection  
LCP1531  
GND  
To  
To  
SLIC side  
line side  
Figure 5. shows the classical PCB layout used to optimize line protection.  
The capacitor C is used to speed up the crowbar structure firing during the fast surge edges.  
This allows minimization of the dynamic breakover voltage at the SLIC Tip and Ring inputs  
during fast strikes. Note that this capacitor is generally present around the SLIC - V pin.  
bat  
So to be efficient it has to be as close as possible from the LCP1531 Gate pin and from the  
reference ground track (or plan) (see Figure 5.). The optimized value for C is 100 nF.  
DocID13397 Rev 5  
5/10  
10  
 
 
Technical information  
LCP1531  
The series resistors Rs1 and Rs2 designed in Figure 4. represent the fuse resistors or the  
PTC which are mandatory to withstand the power contact or the power induction tests  
imposed by the various country standards. Taking into account this fact the actual lightning  
surge current flowing through the LCP1531 is equal to:  
I
= V  
/ (R + R )  
surge g s  
surge  
With:  
V
= peak surge voltage imposed by the standard.  
surge  
Rg = series resistor of the surge generator  
Rs = series resistor of the line card (e.g. PTC)  
The LCP1531 is particularly optimized for the new telecom applications such as the fiber in  
the loop, the WLL, the remote central office. In this case, the operating voltages are smaller  
than in the classical system. This makes the high voltage SLICs particularly suitable.  
The schematics of Figure 6. gives the most frequent topology used for these applications.  
Figure 6. Protection of high voltage SLIC  
-Vbat  
Rs (*)  
TIP  
Gn  
TIP  
GND  
GND  
100 nF  
GND  
SLIC  
Line  
RING  
Rs (*)  
RING  
LCP1531  
Line card  
Rs (*) = PTC or fuse resistor  
Figure 7. Surge peak current versus  
overload duration  
Figure 8. Relative variation of holding current  
versus junction temperature  
I [T ] / I [T =25°C]  
H
j
H
j
I
(A)  
TSM  
1.3  
1.2  
1.1  
1
24  
20  
16  
12  
8
F=50Hz  
Tj initial=25°C  
0.9  
0.8  
0.7  
4
T (°C)  
j
t(s)  
0
-40 -30 -20 -10  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
1.E-02  
1.E-01  
1.E+00  
1.E+01  
1.E+02  
1.E+03  
6/10  
DocID13397 Rev 5  
 
LCP1531  
Package information  
3
Package information  
Epoxy meets UL94, V0  
Lead-free packages  
In order to meet environmental requirements, ST offers these devices in different grades of  
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK  
specifications, grade definitions and product status are available at: www.st.com.  
®
ECOPACK is an ST trademark.  
Figure 9. SO-8 dimension definitions  
L
c1  
C
a3  
A
a2  
b
1
a
1
e
b
E
e3  
D
M
5
8
F
1
4
Projection  
DocID13397 Rev 5  
7/10  
10  
 
Package information  
LCP1531  
Table 8. SO-8 dimension values  
Dimensions  
Ref.  
Millimeters  
Typ.  
Inches  
Typ.  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
1.75  
0.25  
0.069  
0.010  
0.1  
0.004  
0.049  
0.011  
0.007  
0.189  
0.228  
0.150  
1.25  
0.28  
0.17  
4.80  
5.80  
3.80  
0.48  
0.23  
5.00  
6.20  
4.00  
0.019  
0.009  
0.197  
0.244  
0.157  
C
D
4.90  
6.00  
3.90  
1.27  
0.193  
0.236  
0.154  
0.050  
E
E1  
e
h
0.25  
0.40  
0.50  
1.27  
0.010  
0.016  
0.020  
0.050  
L
L1  
k°  
ccc  
1.04  
0.041  
0
8
0
8
0.10  
0.004  
Figure 10. SO-8 footprint measurements in mm (inches)  
6.8  
(0.268)  
0.6  
(0.024)  
4.2  
(0.165)  
1.27  
(0.050)  
8/10  
DocID13397 Rev 5  
 
LCP1531  
Ordering information  
4
Ordering information  
Table 9. Ordering information  
Order code  
Marking  
Package  
Weight  
Base qty  
2500  
Delivery mode  
LCP1531RL  
CP153  
SO-8  
0.08 g  
Tape and reel  
5
Revision history  
Table 10. Document revision history  
Revision Changes  
Date  
23-Mar-2007  
1
2
First issue.  
Reformatted for current standards. Changed gate capacitance  
from 220 nF to 100 nF.  
10-Apr-2008  
10-Aug-2011  
23-Feb-2012  
27-Aug-2013  
3
4
5
Updated standards in Table 1.  
Standardized nomenclature for Gn.  
Updated Table 1, Table 3, Figure 9 and Figure 10.  
DocID13397 Rev 5  
9/10  
10  
LCP1531  
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10/10  
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