SKM100GB176D_10 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SKM100GB176D_10 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总6页 (文件大小：949K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 100GB176D
ꢋ
ꢏ .(/ꢕ" ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ'
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
Values
Units
ꢔꢕꢖꢉ
ꢋ0 ꢏ .( /ꢕ
2)++
2.(
4+
ꢔ
&
&
%
ꢋ0 ꢏ 2(+ /ꢕ
ꢋꢍ ꢏ .( /ꢕ
ꢋꢍ ꢏ 3+ /ꢕ
ꢕ
%
%
ꢕ56ꢏ.$%ꢕꢆꢂꢃ
2(+
8 .+
2+
&
ꢔ
ꢕ56
ꢔ7ꢖꢉ
ꢑꢚꢈꢍ
ꢔꢕꢕ ꢏ 2.++ ꢔ9 ꢔ7ꢖ : .+ ꢔ9 ꢋ0 ꢏ 2.( /ꢕ
ꢔꢕꢖꢉ ; 2)++ ꢔ
<ꢈ
®
SEMITRANS 2
Inverse Diode
%
ꢋ0 ꢏ 2(+ /ꢕ
ꢋꢍ ꢏ .( /ꢕ
ꢋꢍ ꢏ 3+ /ꢕ
2++
)+
&
&
=
Trench IGBT Modules
%
%
%
=56ꢏ.$%=ꢆꢂꢃ
2(+
).+
&
&
=56
ꢑꢚ ꢏ 2+ ꢃꢈ9 ꢈꢊꢆ-
ꢋ0 ꢏ 2(+ /ꢕ
=ꢉ6
SKM 100GB176D
Module
%
.++
&
/ꢕ
/ꢕ
ꢔ
ꢑꢗ56ꢉꢘ
ꢋꢛ0
* >+ --- ?2(+
* >+ --- ?2.(
>+++
ꢋꢈꢑꢄ
ꢔꢊꢈꢂꢒ
&ꢕ" 2 ꢃꢊꢆ-
Features
ꢋ
ꢏ .(/ꢕ" ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ'
Characteristics
Symbol Conditions
IGBT
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢍꢐꢈꢅ
ꢀ
ꢀ
ꢀ
min.
typ.
max. Units
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢔ7ꢖꢗꢑꢎꢘ
ꢔ7ꢖ ꢏ ꢔꢕꢖ" %ꢕ ꢏ @ ꢃ&
(".
("3
#">
ꢔ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
ꢀ
%
ꢔ7ꢖ ꢏ + ꢔ" ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ
ꢋ0 ꢏ .( /ꢕ
@
ꢃ&
ꢔ
ꢕꢖꢉ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢕ
ꢔꢕꢖ+
ꢋ0 ꢏ .( /ꢕ
2
2".
2"2
2#")
.>
Typical Applications*
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ ꢃꢐꢊꢆꢈ ()( *
)(+ ꢔ &ꢕ
,ꢇ!ꢒꢊꢍ ꢑꢌꢐꢆꢈꢚꢂꢌꢑ ꢗꢐꢇ$ꢊꢒꢊꢐꢌꢓ ꢈꢓꢈꢑ-
ꢋ0 ꢏ 2.( /ꢕ
ꢋ0 ꢏ .(/ꢕ
+"4
2@
.+
.
ꢔ
ꢌꢕꢖ
ꢔ7ꢖ ꢏ 2( ꢔ
ꢃA
ꢃA
ꢔ
ꢀ
ꢋ0 ꢏ 2.(/ꢕ
ꢀ
ꢔꢕꢖꢗꢈꢐꢑꢘ
%ꢕꢆꢂꢃ ꢏ )( &" ꢔ7ꢖ ꢏ 2( ꢔ
ꢋ0 ꢏ .(/ꢕꢍꢎꢊꢚꢒꢅꢛ-
ꢋ0 ꢏ 2.(/ꢕꢍꢎꢊꢚꢒꢅꢛ-
.">(
."4
.">
ꢔ
ꢕꢊꢅꢈ
(")
ꢆ=
ꢆ=
ꢕꢂꢅꢈ
ꢔꢕꢖ ꢏ .(" ꢔ7ꢖ ꢏ + ꢔ
ꢏ 2 6ꢁB
+".3
ꢕꢌꢅꢈ
C7
+"..
#.+
3"(
ꢆ=
ꢆꢕ
E
ꢔ7ꢖꢏ*3ꢔD?2(ꢔ
ꢋ0 ꢏ .( /ꢕ
57ꢊꢆꢑ
ꢑ'ꢗꢂꢆꢘ
ꢑꢌ
ꢖꢂꢆ
ꢑ'ꢗꢂ ꢘ
.3+
>+
ꢆꢈ
ꢆꢈ
ꢃF
ꢆꢈ
ꢆꢈ
57ꢂꢆ ꢏ >". A
ꢔꢕꢕ ꢏ 2.++ꢔ
%ꢕꢏ )(&
'ꢊD'ꢑ ꢏ 2#3+ &D<ꢈ
57ꢂ ꢏ >". A
>>
ꢋ0 ꢏ 2.( /ꢕ
ꢔ7ꢖꢏ*2(ꢔ
#3+
2>+
ꢑ
'ꢊD'ꢑ ꢏ >4+ &D<ꢈ
ꢖꢂ
Gꢈ ꢏ .+ ꢆꢁ
.3"(
ꢃF
5ꢑꢎꢗ0*ꢍꢘ
ꢚꢅꢌ %7Hꢋ
+".>
IDJ
GB
1
28-06-2010 GIL
© by SEMIKRON
SKM 100GB176D
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
ꢔ= ꢏ ꢔꢖꢕ
%
=ꢆꢂꢃ ꢏ )( &9 ꢔ7ꢖ ꢏ + ꢔ
ꢋ0 ꢏ .( /ꢕꢍꢎꢊꢚꢒꢅꢛ-
ꢋ0 ꢏ 2.( /ꢕꢍꢎꢊꢚꢒꢅꢛ-
ꢋ0 ꢏ .( /ꢕ
2"#
2"#
2"2
+"4
#")
4"@
2"4
2"4
2"@
2"2
3
ꢔ
ꢔ
ꢔ=+
ꢔ
ꢋ0 ꢏ 2.( /ꢕ
ꢔ
ꢌ=
ꢋ0 ꢏ .( /ꢕ
ꢃA
ꢃA
ꢋ0 ꢏ 2.( /ꢕ
22
%
%
= ꢏ )( &
ꢋ0 ꢏ 2.( /ꢕ
Gꢉ ꢏ .+ ꢆꢁ
)3"(
.4"#
&
556
®
Cꢌꢌ
ꢖꢌꢌ
'ꢊD'ꢑ ꢏ 2#(+ &D<ꢈ
<ꢕ
SEMITRANS 2
ꢔ7ꢖ ꢏ *2(ꢔ 9 ꢔꢕꢕ ꢏ 2.++ ꢔ
.2">
ꢃF
5ꢑꢎꢗ0*ꢍꢘK
ꢚꢅꢌ 'ꢊꢂ'ꢅ
+">(
@+
IDJ
Trench IGBT Modules
Module
Gꢕꢖ
ꢆꢁ
ꢃA
ꢃA
5ꢕꢕL?ꢖꢖL
ꢌꢅꢈ-" ꢑꢅꢌꢃꢊꢆꢐꢒ*ꢍꢎꢊꢚ
ꢋꢍꢐꢈꢅꢏ .( /ꢕ
ꢋꢍꢐꢈꢅꢏ 2.( /ꢕ
+")(
2
SKM 100GB176D
5ꢑꢎꢗꢍ*ꢈꢘ
6ꢈ
ꢚꢅꢌ ꢃꢂ'ꢇꢒꢅ
+"+(
(
IDJ
Nꢃ
Nꢃ
ꢄ
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆM 6#
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ 6(
@
6ꢑ
."(
(
ꢙ
2#+
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
ꢀ
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢕ
Typical Applications*
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ ꢃꢐꢊꢆꢈ ()( *
)(+ ꢔ &ꢕ
,ꢇ!ꢒꢊꢍ ꢑꢌꢐꢆꢈꢚꢂꢌꢑ ꢗꢐꢇ$ꢊꢒꢊꢐꢌꢓ ꢈꢓꢈꢑ-
ꢀ
ꢀ
GB
2
28-06-2010 GIL
© by SEMIKRON
SKM 100GB176D
Z
th
Symbol Conditions
Values
Units
Z
th(j-c)l
5ꢊ
ꢊ ꢏ 2
ꢊ ꢏ .
ꢊ ꢏ @
ꢊ ꢏ >
ꢊ ꢏ 2
ꢊ ꢏ .
ꢊ ꢏ @
2#+
ꢃMDJ
ꢃMDJ
ꢃMDJ
ꢃMDJ
ꢈ
5ꢊ
#+
5ꢊ
2#"(
@"(
5ꢊ
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
+"2+(#
+"++4
+"++22
ꢈ
ꢈ
ꢑꢐꢇꢊ
ꢊ ꢏ >
+"+++(
ꢈ
®
Z
5ꢊ
SEMITRANS 2
th(j-c)D
ꢊ ꢏ 2
ꢊ ꢏ .
ꢊ ꢏ @
ꢊ ꢏ >
ꢊ ꢏ 2
ꢊ ꢏ .
ꢊ ꢏ @
.)+
ꢃMDJ
ꢃMDJ
ꢃMDJ
ꢃMDJ
ꢈ
5ꢊ
2@4
Trench IGBT Modules
5ꢊ
@)
5ꢊ
>
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
+"+>)(
+"+2+>
+"++22
ꢈ
SKM 100GB176D
ꢈ
ꢑꢐꢇꢊ
ꢊ ꢏ >
+"+++@
ꢈ
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
ꢀ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢕ
Typical Applications*
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ ꢃꢐꢊꢆꢈ ()( *
)(+ ꢔ &ꢕ
ꢀ
,ꢇ!ꢒꢊꢍ ꢑꢌꢐꢆꢈꢚꢂꢌꢑ ꢗꢐꢇ$ꢊꢒꢊꢐꢌꢓ ꢈꢓꢈꢑ-
ꢀ
GB
3
28-06-2010 GIL
© by SEMIKRON
SKM 100GB176D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
4
28-06-2010 GIL
© by SEMIKRON
SKM 100GB176D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
5
28-06-2010 GIL
© by SEMIKRON
SKM 100GB176D
UL Recognized
File no. E 63 532
ꢕꢐꢈꢅ K #2
7H
ꢕꢐꢈꢅ K #2
6
28-06-2010 GIL
© by SEMIKRON
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