SKM100GD063DL_06 [SEMIKRON]

Superfast NPT-IGBT Module; 超快的NPT -IGBT模块
SKM100GD063DL_06
型号: SKM100GD063DL_06
厂家: SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述:

Superfast NPT-IGBT Module
超快的NPT -IGBT模块

双极性晶体管
文件: 总5页 (文件大小:750K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SKM 100GD063DL  
1 234ꢒ& ꢆ $ꢈꢃꢃ ꢘꢄꢖꢈꢅꢕꢂꢃꢈ ꢃꢗꢈꢇꢂꢛꢂꢈ)  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
ꢇꢔꢃꢈ  
Values  
Units  
ꢒꢓꢁ  
5 1 23 4ꢒ  
'..  
-7.  
93  
*
*
 
5 1 -3. 4ꢒ  
 1 23 4ꢒ  
 1 8. 4ꢒ  
ꢒ:;  
ꢎꢓꢁ  
ꢗꢃꢇ  
ꢒ:;12(ꢍꢒ ꢘꢚ  
2..  
< 2.  
-.  
*
®
ꢒꢒ 1 7.. ꢑ= ꢎꢓ > 2. ꢑ= 5 1 -23 4ꢒ  
ꢒꢓꢁ ? '..   
@ꢃ  
SEMITRANS 6  
Inverse Diode  
Superfast NPT-IGBT  
Module  
+  
5 1 -3. 4ꢒ  
 1 23 4ꢒ  
 1 8. 4ꢒ  
-..  
A3  
*
*
+:;  
+ꢁ;  
+:;12(ꢍ+ ꢘꢚ  
2..  
A2.  
*
*
SKM 100GD063DL  
 1 -. ꢚꢃ= ꢃꢂ B  
5 1 -3. 4ꢒ  
Module  
ꢄꢉ:;ꢁꢐ  
*
4ꢒ  
4ꢒ  
ꢙ5  
C D. BBB E-3.  
C D. BBB E-23  
23..  
ꢃꢄ"  
ꢂꢃꢘ$  
*ꢒ& - ꢚꢂ B  
Features  
ꢁꢂ ꢃꢄꢅꢆꢇꢄꢆꢅꢈ ꢉꢊꢋꢌ ꢍꢎꢏꢌꢐ  
1 234ꢒ& ꢆ $ꢈꢃꢃ ꢘꢄꢖꢈꢅꢕꢂꢃꢈ ꢃꢗꢈꢇꢂꢛꢂꢈ)  
ꢕꢂꢄꢖ ꢗꢘꢃꢂꢄꢂꢙꢈ ꢄꢈꢚꢗꢈꢅꢔꢄꢆꢅꢈ  
Characteristics  
Symbol Conditions  
IGBT  
ꢇꢔꢃꢈ  
ꢒꢓꢉꢃꢔꢄꢐ  
ꢇꢘꢈꢛꢛꢂꢇꢂꢈ ꢄ  
min.  
typ.  
max. Units  
!ꢂ"ꢖ ꢃꢖꢘꢅꢄ ꢇꢂꢅꢇꢆꢂꢄ ꢇꢔꢗꢔ#ꢂ$ꢂꢄ%& ꢃꢈ$ꢛ  
$ꢂꢚꢂꢄꢂ " ꢄꢘ ' (   
ꢎꢓꢉꢄꢖꢐ  
ꢎꢓ 1 ꢒꢓ&  1 7 ꢚ*  
D&3  
3&3  
'&3  
Typical Applications  
ꢒꢓꢁ  
ꢎꢓ 1 . ꢑ& ꢒꢓ 1 ꢒꢓꢁ  
5 1 23 4ꢒ  
5 1 23 4ꢒ  
5 1 -23 4ꢒ  
5 1 234ꢒ  
5 1 -234ꢒ  
.&-3  
-&.3  
-
.&D3  
ꢚ*  
ꢒꢓ.  
ꢁꢕꢂꢄꢇꢖꢈ) ꢚꢘ)ꢈ ꢗꢘꢕꢈꢅ ꢃꢆꢗꢗ$ꢂꢈꢃ  
ꢌꢖꢅꢈꢈ ꢗꢖꢔꢃꢈ ꢂ ꢙꢈꢅꢄꢈꢅꢃ ꢛꢘꢅ *ꢒ  
ꢚꢘꢄꢘꢅ ꢃꢗꢈꢈ) ꢇꢘ ꢄꢅꢘ$  
+ꢘꢅ  , -. /!0  
ꢒꢓ  
ꢎꢓ 1 -3   
-.&3  
-D  
ꢚF  
ꢚF  
ꢃꢕ  
ꢒꢓꢉꢃꢔꢄꢐ  
ꢒ ꢘꢚ 1 -.. *& ꢎꢓ 1 -3  5 1 234ꢒꢇꢖꢂꢗ$ꢈꢙB  
5 1 -234ꢒꢇꢖꢂꢗ$ꢈꢙB  
2&-  
2&D  
2&3  
2&8  
ꢂꢈꢃ  
3&'  
.&'  
 +  
 +  
ꢘꢈꢃ  
ꢒꢓ 1 23& ꢎꢓ 1 .   
ꢎꢓ 1 .ꢑBBB-3ꢑ  
 1 - ;!0  
ꢅꢈꢃ  
G  
.&D  
 +  
 ꢒ  
2D.  
)ꢉꢘ ꢐ  
 
3.  
D.  
D
 ꢃ  
 ꢃ  
ꢚH  
 ꢃ  
 ꢃ  
:
:
1 -. F  
ꢒꢒ 1 7..ꢑ  
ꢒ ꢘꢚ1 -..*  
5 1 -23 4ꢒ  
ꢎꢓ 1 < -3ꢑ  
ꢎꢘ  
 
)ꢉꢘꢛꢛꢐ  
 
ꢎꢘꢛꢛ 1 -. F  
7..  
73  
ꢘꢛꢛ  
7
ꢚH  
:
ꢗꢈꢅ ꢍꢎꢏꢌ  
.&2A  
IJK  
ꢄꢖꢉ5Cꢇꢐ  
GD  
1
05-09-2006 SEN  
© by SEMIKRON  
SKM 100GD063DL  
Characteristics  
Symbol Conditions  
Inverse Diode  
min.  
typ.  
max. Units  
+ 1 ꢓꢒ  
+ ꢘꢚ 1 -.. *= ꢎꢓ 1 .   
5 1 23 4ꢒꢇꢖꢂꢗ$ꢈꢙB  
5 1 -23 4ꢒꢇꢖꢂꢗ$ꢈꢙB  
-&33  
-&33  
-&9  
+.  
+  
5 1 23 4ꢒ  
.&9  
-.  
5 1 23 4ꢒ  
ꢚF  
::;  
Gꢅꢅ  
+ ꢘꢚ 1 -.. *  
5 1 -23 4ꢒ  
8
*
)ꢂJ)ꢄ 1 -... *J@ꢃ  
DD  
@ꢒ  
®
SEMITRANS 6  
ꢅꢅ  
ꢎꢓ 1 C-3 ꢑ= ꢒꢒ 1 '..   
ꢗꢈꢅ )ꢂꢘ)ꢈ  
-&3  
ꢚH  
:
.&'  
IJK  
ꢄꢖꢉ5CꢇꢐL  
Superfast NPT-IGBT  
Module  
Module  
Mꢒꢓ  
'.  
.&.3  
3
 !  
IJK  
ꢊꢚ  
"
:
ꢗꢈꢅ ꢚꢘ)ꢆ$ꢈ  
ꢄꢖꢉꢇCꢃꢐ  
SKM 100GD063DL  
;
ꢄꢘ ꢖꢈꢔꢄ ꢃꢂ / ;3  
D
-A3  
This is an electrostatic discharge sensitive device (ESDS), international standard  
IEC 60747-1, Chapter IX.  
Features  
ꢁꢂ ꢃꢄꢅꢆꢇꢄꢆꢅꢈ ꢉꢊꢋꢌ ꢍꢎꢏꢌꢐ  
This technical information specifies semiconductor devices but promises no  
characteristics. No warranty or guarantee expressed or implied is made regarding  
delivery, performance or suitability.  
ꢕꢂꢄꢖ ꢗꢘꢃꢂꢄꢂꢙꢈ ꢄꢈꢚꢗꢈꢅꢔꢄꢆꢅꢈ  
ꢒꢓꢉꢃꢔꢄꢐ  
ꢇꢘꢈꢛꢛꢂꢇꢂꢈ ꢄ  
!ꢂ"ꢖ ꢃꢖꢘꢅꢄ ꢇꢂꢅꢇꢆꢂꢄ ꢇꢔꢗꢔ#ꢂ$ꢂꢄ%& ꢃꢈ$ꢛ  
$ꢂꢚꢂꢄꢂ " ꢄꢘ ' (   
Typical Applications  
ꢁꢕꢂꢄꢇꢖꢈ) ꢚꢘ)ꢈ ꢗꢘꢕꢈꢅ ꢃꢆꢗꢗ$ꢂꢈꢃ  
ꢌꢖꢅꢈꢈ ꢗꢖꢔꢃꢈ ꢂ ꢙꢈꢅꢄꢈꢅꢃ ꢛꢘꢅ *ꢒ  
ꢚꢘꢄꢘꢅ ꢃꢗꢈꢈ) ꢇꢘ ꢄꢅꢘ$  
+ꢘꢅ  , -. /!0  
ꢃꢕ  
GD  
2
05-09-2006 SEN  
© by SEMIKRON  
SKM 100GD063DL  
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'  
Fig. 2 Rated current vs. temperature IC = f (TC)  
Fig. 4 Typ. turn-on /-off energy = f (RG)  
Fig. 6 Typ. gate charge characteristic  
Fig. 3 Typ. turn-on /-off energy = f (IC)  
Fig. 5 Typ. transfer characteristic  
3
05-09-2006 SEN  
© by SEMIKRON  
SKM 100GD063DL  
Fig. 7 Typ. switching times vs. IC  
Fig. 8 Typ. switching times vs. gate resistor RG  
Fig. 9 Transient thermal impedance of IGBT and Diode  
Fig. 10 CAL diode forward characteristic  
Fig. 11 Typ. CAL diode peak reverse recovery current  
Fig. 12 Typ. CAL recovered charge  
4
05-09-2006 SEN  
© by SEMIKRON  
SKM 100GD063DL  
UL recognized file  
no E 63 532  
ꢒꢔꢃꢈ L '8  
ꢎL  
ꢒꢔꢃꢈ '8  
5
05-09-2006 SEN  
© by SEMIKRON  

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