SKM100GD063DL_09 [SEMIKRON]
Superfast NPT-IGBT Module; 超快的NPT -IGBT模块
| 型号： | SKM100GD063DL_09 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Superfast NPT-IGBT Module |
| 文件： | 总5页 (文件大小：789K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 100GD063DL
ꢌ
1 234ꢒ& ꢆ $ꢈꢃꢃ ꢘꢄꢖꢈꢅꢕꢂꢃꢈ ꢃꢗꢈꢇꢂꢛꢂꢈ)
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢇꢔꢃꢈ
Values
Units
ꢑꢒꢓꢁ
ꢌ5 1 23 4ꢒ
'..
-7.
93
ꢑ
*
*
ꢍꢒ
ꢌ5 1 -3. 4ꢒ
ꢌꢇ 1 23 4ꢒ
ꢌꢇ 1 8. 4ꢒ
ꢍꢒ:;
ꢑꢎꢓꢁ
ꢄꢗꢃꢇ
ꢍꢒ:;12(ꢍꢒ ꢘꢚ
2..
< 2.
-.
*
ꢑ
ꢑꢒꢒ 1 7.. ꢑ= ꢑꢎꢓ > 2. ꢑ= ꢌ5 1 -23 4ꢒ
ꢑꢒꢓꢁ ? '.. ꢑ
@ꢃ
®
SEMITRANS 6
Inverse Diode
ꢍ+
ꢌ5 1 -3. 4ꢒ
ꢌꢇ 1 23 4ꢒ
ꢌꢇ 1 8. 4ꢒ
-..
A3
*
*
Superfast NPT-IGBT
Module
ꢍ+:;
ꢍ+ꢁ;
ꢍ+:;12(ꢍ+ ꢘꢚ
2..
A2.
*
*
ꢄꢗ 1 -. ꢚꢃ= ꢃꢂ B
ꢌ5 1 -3. 4ꢒ
SKM 100GD063DL
Module
ꢍꢄꢉ:;ꢁꢐ
*
4ꢒ
4ꢒ
ꢑ
ꢌꢙ5
C D. BBB E-3.
C D. BBB E-23
23..
ꢌꢃꢄ"
ꢑꢂꢃꢘ$
*ꢒ& - ꢚꢂ B
Features
ꢌ
1 234ꢒ& ꢆ $ꢈꢃꢃ ꢘꢄꢖꢈꢅꢕꢂꢃꢈ ꢃꢗꢈꢇꢂꢛꢂꢈ)
Characteristics
Symbol Conditions
IGBT
ꢇꢔꢃꢈ
ꢁꢂ ꢃꢄꢅꢆꢇꢄꢆꢅꢈ ꢉꢊꢋꢌ ꢍꢎꢏꢌꢐ
ꢀ
ꢀ
min.
typ.
max. Units
ꢑ
ꢕꢂꢄꢖ ꢗꢘꢃꢂꢄꢂꢙꢈ ꢄꢈꢚꢗꢈꢅꢔꢄꢆꢅꢈ
ꢒꢓꢉꢃꢔꢄꢐ
ꢇꢘꢈꢛꢛꢂꢇꢂꢈ ꢄ
!ꢂ"ꢖ ꢃꢖꢘꢅꢄ ꢇꢂꢅꢇꢆꢂꢄ ꢇꢔꢗꢔ#ꢂ$ꢂꢄ%& ꢃꢈ$ꢛ
ꢑꢎꢓꢉꢄꢖꢐ
ꢑꢎꢓ 1 ꢑꢒꢓ& ꢍꢒ 1 7 ꢚ*
D&3
3&3
'&3
ꢑ
ꢀ
$ꢂꢚꢂꢄꢂ " ꢄꢘ ' ( ꢍ
ꢒ
ꢍꢒꢓꢁ
ꢑꢎꢓ 1 . ꢑ& ꢑꢒꢓ 1 ꢑꢒꢓꢁ
ꢌ5 1 23 4ꢒ
ꢌ5 1 23 4ꢒ
ꢌ5 1 -23 4ꢒ
ꢌ5 1 234ꢒ
ꢌ5 1 -234ꢒ
.&-3
-&.3
-
.&D3
ꢚ*
ꢑ
ꢑꢒꢓ.
Typical Applications
ꢁꢕꢂꢄꢇꢖꢈ) ꢚꢘ)ꢈ ꢗꢘꢕꢈꢅ ꢃꢆꢗꢗ$ꢂꢈꢃ
ꢌꢖꢅꢈꢈ ꢗꢖꢔꢃꢈ ꢂ ꢙꢈꢅꢄꢈꢅꢃ ꢛꢘꢅ *ꢒ
ꢑ
ꢀ
ꢀ
ꢅꢒꢓ
ꢑꢎꢓ 1 -3 ꢑ
-.&3
-D
ꢚF
ꢚF
ꢑ
ꢚꢘꢄꢘꢅ ꢃꢗꢈꢈ) ꢇꢘ ꢄꢅꢘ$
+ꢘꢅ ꢛ , -. /!0
ꢑꢒꢓꢉꢃꢔꢄꢐ
ꢍꢒ ꢘꢚ 1 -.. *& ꢑꢎꢓ 1 -3 ꢑ ꢌ5 1 234ꢒꢇꢖꢂꢗ$ꢈꢙB
ꢌ5 1 -234ꢒꢇꢖꢂꢗ$ꢈꢙB
2&-
2&D
2&3
2&8
ꢀ
ꢃꢕ
ꢑ
ꢒꢂꢈꢃ
3&'
.&'
+
+
ꢒꢘꢈꢃ
ꢑꢒꢓ 1 23& ꢑꢎꢓ 1 . ꢑ
ꢑꢎꢓ 1 .ꢑBBB-3ꢑ
ꢛ 1 - ;!0
ꢒꢅꢈꢃ
Gꢎ
.&D
+
ꢒ
2D.
ꢄ)ꢉꢘ ꢐ
ꢄꢅ
3.
D.
D
ꢃ
ꢃ
ꢚH
ꢃ
ꢃ
:
:
1 -. F
ꢑꢒꢒ 1 7..ꢑ
ꢍꢒ1 -..*
ꢎꢘ
ꢓꢘ
ꢄ)ꢉꢘꢛꢛꢐ
ꢄꢛ
ꢎꢘꢛꢛ 1 -. F
ꢌ5 1 -23 4ꢒ
ꢑꢎꢓ 1 < -3ꢑ
7..
73
ꢓꢘꢛꢛ
7
ꢚH
:
ꢗꢈꢅ ꢍꢎꢏꢌ
.&2A
IJK
ꢄꢖꢉ5Cꢇꢐ
GD
1
24-08-2009 DIL
© by SEMIKRON
SKM 100GD063DL
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
ꢑ+ 1 ꢑꢓꢒ
ꢍ+ ꢘꢚ 1 -.. *= ꢑꢎꢓ 1 . ꢑ
ꢌ5 1 23 4ꢒꢇꢖꢂꢗ$ꢈꢙB
ꢌ5 1 -23 4ꢒꢇꢖꢂꢗ$ꢈꢙB
-&33
-&33
-&9
ꢑ
ꢑ
ꢑ+.
ꢅ+
ꢌ5 1 23 4ꢒ
.&9
-.
ꢑ
ꢌ5 1 23 4ꢒ
ꢚF
ꢍ::;
Gꢅꢅ
ꢍ+ 1 -.. *
ꢌ5 1 -23 4ꢒ
8
*
)ꢂJ)ꢄ 1 -... *J@ꢃ
DD
@ꢒ
ꢓꢅꢅ
ꢑꢎꢓ 1 C-3 ꢑ= ꢑꢒꢒ 1 '.. ꢑ
ꢗꢈꢅ )ꢂꢘ)ꢈ
-&3
ꢚH
®
:
.&'
IJK
SEMITRANS 6
ꢄꢖꢉ5CꢇꢐL
Module
Mꢒꢓ
'.
.&.3
3
!
IJK
ꢊꢚ
"
Superfast NPT-IGBT
Module
:
ꢗꢈꢅ ꢚꢘ)ꢆ$ꢈ
ꢄꢖꢉꢇCꢃꢐ
;
ꢄꢘ ꢖꢈꢔꢄ ꢃꢂ / ;3
D
ꢃ
SKM 100GD063DL
ꢕ
-A3
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Features
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
ꢁꢂ ꢃꢄꢅꢆꢇꢄꢆꢅꢈ ꢉꢊꢋꢌ ꢍꢎꢏꢌꢐ
ꢀ
ꢀ
ꢑ
ꢕꢂꢄꢖ ꢗꢘꢃꢂꢄꢂꢙꢈ ꢄꢈꢚꢗꢈꢅꢔꢄꢆꢅꢈ
ꢒꢓꢉꢃꢔꢄꢐ
ꢇꢘꢈꢛꢛꢂꢇꢂꢈ ꢄ
!ꢂ"ꢖ ꢃꢖꢘꢅꢄ ꢇꢂꢅꢇꢆꢂꢄ ꢇꢔꢗꢔ#ꢂ$ꢂꢄ%& ꢃꢈ$ꢛ
ꢀ
$ꢂꢚꢂꢄꢂ " ꢄꢘ ' ( ꢍ
ꢒ
Typical Applications
ꢁꢕꢂꢄꢇꢖꢈ) ꢚꢘ)ꢈ ꢗꢘꢕꢈꢅ ꢃꢆꢗꢗ$ꢂꢈꢃ
ꢌꢖꢅꢈꢈ ꢗꢖꢔꢃꢈ ꢂ ꢙꢈꢅꢄꢈꢅꢃ ꢛꢘꢅ *ꢒ
ꢀ
ꢀ
ꢚꢘꢄꢘꢅ ꢃꢗꢈꢈ) ꢇꢘ ꢄꢅꢘ$
+ꢘꢅ ꢛ , -. /!0
ꢀ
ꢃꢕ
GD
2
24-08-2009 DIL
© by SEMIKRON
SKM 100GD063DL
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
3
24-08-2009 DIL
© by SEMIKRON
SKM 100GD063DL
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL recovered charge
4
24-08-2009 DIL
© by SEMIKRON
SKM 100GD063DL
UL recognized file
no E 63 532
ꢒꢔꢃꢈ L '8
ꢎL
ꢒꢔꢃꢈ '8
5
24-08-2009 DIL
© by SEMIKRON
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