SKM100GB17E4 [SEMIKRON]
Insulated Gate Bipolar Transistor;
| 型号： | SKM100GB17E4 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总5页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM100GB17E4
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Unit
Tj = 25 °C
VCES
IC
1700
164
127
100
300
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3xICnom
VCC = 1000 V
-20 ... 20
SEMITRANS® 2
V
V
GE ≤ 15 V
CES ≤ 1700 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
IGBT4 Modules
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
113
83
A
A
Tj = 175 °C
SKM100GB17E4
IFnom
IFRM
IFSM
Tj
100
200
650
A
A
A
°C
Preliminary Data
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Features
• IGBT4 = 4. generation medium fast
trench IGBT
-40 ... 175
Module
It(RMS)
Tstg
• CAL4 = Soft switching 4. generation
CAL-diode
Tterminal = 80 °C
200
-40 ... 125
4000
A
°C
V
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• With integrated gate resistor
• For higher switching frequenzies up to
8kHz
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
• UL recognized, file no. E63532
min.
typ.
max.
Unit
Typical Applications*
• AC inverter drives
• UPS
IC = 100 A
Tj = 25 °C
VCE(sat)
1.90
2.30
2.20
2.60
V
V
V
GE = 15 V
Tj = 150 °C
• Electronic welders
• Wind power
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.8
0.7
11.00
16.00
5.8
0.9
0.8
13.00
18.00
6.4
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
chiplevel
• Public transport
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
VGE = 15 V
chiplevel
VGE(th)
ICES
VGE=VCE, IC = 4 mA
VGE = 0 V
5.2
Tj = 25 °C
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
1
V
CE = 1700 V
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
9
VCE = 25 V
GE = 0 V
0.34
0.29
1000
7.5
200
25
29
760
140
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 1200 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
I
C = 100 A
V
GE = +15/-15 V
R
R
G on = 2 Ω
G off = 2 Ω
Tj = 150 °C
Eoff
45
mJ
Rth(j-c)
per IGBT
0.234
K/W
GB
© by SEMIKRON
Rev. 1 – 16.06.2014
1
SKM100GB17E4
Characteristics
Symbol Conditions
Inverse diode
min.
typ.
max.
Unit
IF = 100 A
Tj = 25 °C
VF = VEC
2.00
2.15
2.40
2.57
V
V
V
GE = 0 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.32
1.08
6.8
10.7
180
43
1.56
1.22
8.4
V
V
mΩ
mΩ
A
chiplevel
chiplevel
13.5
SEMITRANS® 2
IF = 100 A
IRRM
Qrr
µC
VGE = ±15 V
Tj = 150 °C
Err
32
mJ
IGBT4 Modules
V
CC = 1200 V
Rth(j-c)
per diode
0.504
30
K/W
Module
LCE
RCC'+EE'
SKM100GB17E4
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
Preliminary Data
TC = 25 °C
0.65
1
0.04
terminal-chip
T
C = 125 °C
Features
Rth(c-s)
Ms
Mt
per module
to heat sink M6
0.05
5
5
• IGBT4 = 4. generation medium fast
trench IGBT
3
2.5
• CAL4 = Soft switching 4. generation
CAL-diode
to terminals M5
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• With integrated gate resistor
• For higher switching frequenzies up to
8kHz
w
160
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
• Wind power
• Public transport
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
GB
2
Rev. 1 – 16.06.2014
© by SEMIKRON
SKM100GB17E4
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 1 – 16.06.2014
3
SKM100GB17E4
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 1 – 16.06.2014
© by SEMIKRON
SKM100GB17E4
SEMITRANS 2
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1 – 16.06.2014
5
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