SK35DGDL12T4ETE2 [SEMIKRON]
Insulated Gate Bipolar Transistor,;
| 型号： | SK35DGDL12T4ETE2 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总6页 (文件大小：333K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK35DGDL12T4ETE2
Absolute Maximum Ratings
Symbol Conditions
IGBT 1
Values
Unit
Tj = 25 °C
VCES
IC
1200
43
35
35
105
V
A
A
A
A
V
Ts = 25 °C
Ts = 70 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3 x ICnom
VCC = 800 V
-20 ... 20
SEMITOP®E2
V
V
GE ≤ 15 V
CES ≤ 1200 V
Tj = 150 °C
tpsc
Tj
10
µs
°C
-40 ... 175
3-phase bridge rectifer +
brake chopper + 3-phase
bridge inverter
Engineering Sample
SK35DGDL12T4ETE2
Target Data
Absolute Maximum Ratings
Symbol Conditions
IGBT 2
Values
Unit
Tj = 25 °C
VCES
IC
1200
43
35
35
105
V
A
A
A
A
V
Tc = 25 °C
Tc = 70 °C
Tj = 175 °C
Features
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
ICnom
ICRM
VGES
ICRM = 3 x ICnom
VCC = 800 V
-20 ... 20
V
V
GE ≤ 15 V
Tj = 150 °C
tpsc
Tj
10
µs
°C
CES ≤ 1200 V
-40 ... 175
• Trench4 IGBT technology
• Robust and soft freewheeling diode
CAL4F technology
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor
Absolute Maximum Ratings
Symbol Conditions
Diode 1
Values
Unit
Tj = 25 °C
VRRM
IF
1600
53
39
V
A
A
Typical Applications*
Ts = 25 °C
Ts = 70 °C
• Inverter up to 30kVA
Tj = 150 °C
• Typical motor power 15kW
IFnom
IFSM
i2t
18
350
612
A
A
A²s
°C
Remarks
10 ms, sin 180°, Tj = 150 °C
10 ms, sin 180°, Tj = 150 °C
• IGBT1: inverter IGBT
• IGBT2: brake IGBT
• Diode1: rectifier diode section
• Diode2: APD inverter
• Diode3: FWD brake
Tj
-40 ... 150
Absolute Maximum Ratings
Symbol Conditions
Diode 2
Values
Unit
Tj = 25 °C
VRRM
IF
1200
38
30
V
A
A
Ts = 25 °C
Ts = 70 °C
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
35
105
170
A
A
A
°C
IFRM = 3 x IFnom
10 ms, sin 180°, Tj = 150 °C
-40 ... 175
DGDL-ET
© by SEMIKRON
Rev. 0.3 – 09.02.2017
1
SK35DGDL12T4ETE2
Absolute Maximum Ratings
Symbol Conditions
Diode 3
Values
Unit
Tj = 25 °C
VRRM
IF
1200
38
30
V
A
A
Ts = 25 °C
Ts = 70 °C
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
35
105
170
A
A
A
°C
IFRM = 3 x IFnom
10 ms, sin 180°, Tj = 150 °C
SEMITOP®E2
-40 ... 175
Absolute Maximum Ratings
3-phase bridge rectifer +
brake chopper + 3-phase
bridge inverter
Engineering Sample
SK35DGDL12T4ETE2
Target Data
Symbol Conditions
Module
Values
Unit
It(RMS)
Tstg
Tterminal = 100 °C, TS = 60°C
t.b.d.
-40 ... 125
2500
A
°C
V
Visol
AC, sinusoidal, t = 1 min
Characteristics
Features
Symbol Conditions
IGBT 1
min.
typ.
max.
Unit
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench4 IGBT technology
• Robust and soft freewheeling diode
CAL4F technology
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor
IC = 35 A
Tj = 25 °C
VCE(sat)
1.85
2.25
2.10
2.45
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.80
0.70
30
44
5.8
0.90
0.80
34
47
6.5
-
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
chiplevel
VGE = 15 V
chiplevel
VGE = VCE, IC = 1.2 mA
Tj = 25 °C
V
VGE(th)
ICES
5
VGE = 0 V
CE = 1200 V
-
Typical Applications*
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
1.95
0.155
0.115
270
0
• Inverter up to 30kVA
VCE = 25 V
GE = 0 V
• Typical motor power 15kW
V
Remarks
• IGBT1: inverter IGBT
• IGBT2: brake IGBT
• Diode1: rectifier diode section
• Diode2: APD inverter
• Diode3: FWD brake
- 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
I
C = 35 A
R
R
G on = 12 Ω
G off = 12 Ω
3.15
V
V
GE neg = -7 V
GE pos = 15 V
Tj = 150 °C
Eoff
3.2
1.2
mJ
Rth(j-s)
per IGBT
K/W
DGDL-ET
2
Rev. 0.3 – 09.02.2017
© by SEMIKRON
SK35DGDL12T4ETE2
Characteristics
Symbol Conditions
IGBT 2
min.
typ.
max.
Unit
IC = 35 A
Tj = 25 °C
VCE(sat)
1.85
2.25
2.10
2.45
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.80
0.70
30
44
5.8
0.90
0.80
34
47
6.5
-
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
chiplevel
VGE = 15 V
chiplevel
SEMITOP®E2
VGE = VCE V, IC = 1.2 mA
Tj = 25 °C
VGE(th)
ICES
5
VGE = 0 V
CE = 1200 V
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
-
3-phase bridge rectifer +
brake chopper + 3-phase
bridge inverter
Engineering Sample
SK35DGDL12T4ETE2
Target Data
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
1.95
0.155
0.115
270
0
VCE = 25 V
GE = 0 V
V
- 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
I
C = 35 A
R
R
G on = 12 Ω
G off = 12 Ω
Features
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench4 IGBT technology
• Robust and soft freewheeling diode
CAL4F technology
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor
3.15
V
V
GE neg = -7 V
GE pos = 15 V
Tj = 150 °C
Eoff
3.2
1.2
mJ
Rth(j-s)
per IGBT
K/W
Characteristics
Symbol Conditions
Diode 1
VF
min.
typ.
max.
Unit
IF = 18 A
Tj = 25 °C
1.00
0.90
1.21
1.10
V
V
Tj = 125 °C
Typical Applications*
chiplevel
• Inverter up to 30kVA
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VF0
0.88
0.73
6.7
9.4
-
0.98
0.83
13
V
V
mΩ
mΩ
A
chiplevel
• Typical motor power 15kW
rF
Remarks
• IGBT1: inverter IGBT
• IGBT2: brake IGBT
• Diode1: rectifier diode section
• Diode2: APD inverter
• Diode3: FWD brake
chiplevel
15
IF = 18 A
IRRM
Qrr
-
µC
Err
-
mJ
Rth(j-s)
per Diode
1.46
K/W
DGDL-ET
© by SEMIKRON
Rev. 0.3 – 09.02.2017
3
SK35DGDL12T4ETE2
Characteristics
Symbol Conditions
Diode 2
min.
typ.
max.
Unit
IF = 35 A
Tj = 25 °C
VF
2.30
2.29
2.62
2.62
V
V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
1.30
0.90
29
1.50
1.10
32
V
V
mΩ
mΩ
A
chiplevel
rF
chiplevel
40
43
SEMITOP®E2
IF = 35 A
IRRM
Qrr
µC
VGE = -7 V
Tj = 150 °C
Err
2.6
mJ
3-phase bridge rectifer +
brake chopper + 3-phase
bridge inverter
Engineering Sample
SK35DGDL12T4ETE2
Target Data
V
CC = 600 V
Rth(j-s)
per Diode
1.55
K/W
Characteristics
Symbol Conditions
Diode 3
VF
min.
typ.
max.
Unit
IF = 35 A
Tj = 25 °C
2.30
2.29
2.62
2.62
V
V
Tj = 150 °C
Features
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench4 IGBT technology
• Robust and soft freewheeling diode
CAL4F technology
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
1.30
0.90
29
1.50
1.10
32
V
V
mΩ
mΩ
A
chiplevel
rF
chiplevel
40
43
IF = 35 A
IRRM
Qrr
µC
VGE = -7 V
Tj = 150 °C
Err
2.6
mJ
V
CC = 600 V
Rth(j-s)
1.55
K/W
Characteristics
Typical Applications*
Symbol Conditions
Module
min.
typ.
max.
Unit
• Inverter up to 30kVA
• Typical motor power 15kW
Ms
w
to heatsink
weight
2
2.1
Nm
g
Remarks
• IGBT1: inverter IGBT
• IGBT2: brake IGBT
• Diode1: rectifier diode section
• Diode2: APD inverter
• Diode3: FWD brake
34
Characteristics
Symbol Conditions
Temperature Sensor
min.
typ.
max.
Unit
Tr = 100 °C
R100
493 ± 5%
Ω
3550
±2%
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
K
DGDL-ET
4
Rev. 0.3 – 09.02.2017
© by SEMIKRON
SK35DGDL12T4ETE2
SEMITOP®E2
DGDL-ET
© by SEMIKRON
Rev. 0.3 – 09.02.2017
5
SK35DGDL12T4ETE2
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
In accordance with the quality guidelines of SEMIKRON, we would like to point out that the products are engineering samples. These
engineering samples are not yet produced under quality conditions approaching those of series production, and are at the present time not
included in the SEMIKRON quality monitoring and control process. Neither the product nor the production process has to date gone completely
through the SEMIKRON internal authorization procedure. SEMIKRON may make any amendments without any prior notification. SEMIKRON
cannot and shall not promise or commit itself to release and/or make available a final version or series product after the development phase.
SEMIKRON cannot and will not assume any responsibility with regard to freedom from defects, functionality, and adaptation to and interaction
with possible applications of the user or with regard to any other potential risks resulting from the use of engineering samples. Therefore
SEMIKRON explicitly excludes any warranty and liability; as far as legally possible. The customer shall fully indemnify and hold harmless
SEMIKRON from any and all risks, damages, losses, expenses and costs directly or indirectly resulting out of or in connection with the
commissioning, operation, system integration, sale, dissemination or any other kind of use of engineering samples by the customer and/or any
third party, which has come into possession of engineering samples through or because of the customer. All know-how and all registerable
and non-registerable copyrights and industrial property rights arising from or in connection with these engineering samples remain the
exclusive property of SEMIKRON.
6
Rev. 0.3 – 09.02.2017
© by SEMIKRON
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