SK35GD12T4ET [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK35GD12T4ET |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总5页 (文件大小：849K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK35GD12T4ET
ꢐ ' )* +ꢗ& ꢊꢂꢏꢃꢄꢄ ꢉꢋꢑꢃꢆꢇꢌꢄꢃ ꢄ#ꢃꢅꢌ,ꢌꢃꢎ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢄ
Values
Units
$
ꢐ. ' )* +ꢗ
0)11
ꢒꢒ
$
ꢘ
ꢘ
ꢗ%-
ꢓꢗ
ꢐ. ' 02* +ꢗ
ꢐꢄ ' )* +ꢗ
ꢐꢄ ' 21 +ꢗ
3*
ꢓꢗ45
ꢓꢗ45' 3 6 ꢓꢗꢂꢉꢈ
01*
7 )1
01
ꢘ
$
$
ꢔ%-
ꢋ#ꢄꢅ
$ꢗꢗ ' 811 $9 $ꢔ% : 0* $9 ꢐ. ' 0*1 +ꢗ
<ꢄ
®
SEMITOP 3
$ꢗ%- ; 0)11 $
Inverse Diode
ꢓꢚ
ꢐ. ' 02* +ꢗ
ꢐꢄ ' )* +ꢗ
ꢐꢄ ' 21 +ꢗ
ꢒ1
30
ꢘ
ꢘ
IGBT Module
ꢓꢚ45
ꢓꢚ-5
ꢓꢚ45' 3 6 ꢓꢚꢂꢉꢈ
ꢋ# ' 01 ꢈꢄ9 ꢑ!ꢏ, ꢄꢌꢂꢃ ꢇ!(ꢃ ꢐ. ' 0*1 +ꢗ
01*
))*
ꢘ
ꢘ
SK35GD12T4ET
Module
ꢓꢋ=45->
ꢘ
+ꢗ
+ꢗ
$
ꢐ(.
?ꢒ1 @@@ A02*
?ꢒ1 @@@ A0)*
)*11
Target Data
ꢐꢄꢋꢍ
$
ꢘꢗ& 0 ꢈꢌꢂ@
ꢌꢄꢉꢏ
Features
ꢁꢂꢃ ꢄꢅꢆꢃꢇ ꢈꢉꢊꢂꢋꢌꢂꢍ ꢈꢉꢎꢊꢏꢃ
ꢐꢆꢃꢂꢅꢑꢒ ꢓꢔꢕꢐ ꢋꢃꢅꢑꢂꢉꢏꢉꢍꢖ
ꢗꢘꢙꢒ ꢋꢃꢅꢑꢂꢉꢏꢉꢍꢖ ꢚꢛ
ꢓꢂꢋꢃꢍꢆ!ꢋꢃꢎ "ꢐꢗ ꢋꢃꢈ#ꢃꢆ!ꢋꢊꢆꢃ
ꢀ
ꢀ
ꢀ
ꢀ
ꢐ ' )* +ꢗ& ꢊꢂꢏꢃꢄꢄ ꢉꢋꢑꢃꢆꢇꢌꢄꢃ ꢄ#ꢃꢅꢌ,ꢌꢃꢎ
Characteristics
Symbol Conditions
IGBT
ꢄ
min.
typ.
max. Units
ꢄꢃꢂꢄꢉꢆ
$
$ꢔ% ' $ꢗ%& ꢓꢗ ' 0&) ꢈꢘ
*
*&8
B&*
$
ꢈꢘ
ꢈꢘ
ꢂꢘ
ꢂꢘ
$
ꢔ%=ꢋꢑ>
ꢓꢗ%-
$ꢔ% ' 1 $& $ꢗ% ' $ꢗ%-
ꢐ. ' )* +ꢗ
1&11*
Typical Applications*
ꢐ. ' 0)* +ꢗ
ꢐ. ' )* +ꢗ
ꢓꢔ%-
$ꢗ% ' 1 $& $ꢔ% ' )1 $
0)1
Remarks
ꢐ. ' 0)* +ꢗ
ꢐ. ' )* +ꢗ
$
& $ ' ꢅꢑꢌ# ꢏꢃ(ꢃꢏ (!ꢏꢊꢃ
ꢀ
ꢗ%&ꢄ!ꢋ
ꢚ
$
0&0
0
0&3
0&)
ꢗ%1
ꢐ. ' 0*1 +ꢗ
ꢐ. ' )*+ꢗ
$
ꢆꢗ%
$ꢔ% ' 0* $
)0&ꢒ
3*&2
0&8*
)&)*
ꢈC
ꢈC
$
ꢐ. ' 0*1+ꢗ
ꢐ. ' )*+ꢗꢅꢑꢌ#ꢏꢃ(@
ꢐ. ' 0*1+ꢗꢅꢑꢌ#ꢏꢃ(@
$
ꢓꢗꢂꢉꢈ ' 3* ꢘ& $ꢔ% ' 0* $
)&1*
)&ꢒ*
ꢗ%=ꢄ!ꢋ>
$
ꢗꢌꢃꢄ
0&D*
ꢂꢚ
ꢂꢚ
ꢗꢉꢃꢄ
$
ꢗ% ' )*& $ꢔ% ' 1 $
ꢔ%' ?2$@@@A0*$
, ' 0 5EF
1&0**
ꢗꢆꢃꢄ
Gꢔ
1&00*
0D1
ꢂꢚ
ꢂꢗ
$
ꢋꢎ=ꢉꢂ>
ꢋꢆ
)8
)*
ꢂꢄ
ꢂꢄ
ꢈH
ꢂꢄ
ꢂꢄ
4ꢔꢉꢂ ' )) C
$ꢗꢗ ' B11$
%
ꢓꢗ' 3*ꢘ
3&)2
313
21
ꢉꢂ
ꢋꢎ=ꢉ,,>
ꢋ,
4ꢔꢉ,, ' )) C
ꢐ. ' 0*1 +ꢗ
ꢎꢌIꢎꢋ ' )D11 ꢘI<ꢄ
$ꢔ%' 70* $
%
3&3
ꢈH
ꢉ,,
4ꢋꢑ=.?ꢄ>
#ꢃꢆ ꢓꢔꢕꢐ
0&)0
JIꢛ
GD-ET
1
14-05-2009 DIL
© by SEMIKRON
SK35GD12T4ET
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
$ꢚ ' $%ꢗ
ꢓꢚꢂꢉꢈ ' 3* ꢘ9 $ꢔ% ' 1 $
ꢐ. ' )* +ꢗꢅꢑꢌ#ꢏꢃ(@
ꢐ. ' 0*1 +ꢗꢅꢑꢌ#ꢏꢃ(@
ꢐ. ' )* +ꢗ
)&3
)&)D
0&3
)&B)
)&B)
0&*
$
$
$
$
ꢚ1
ꢐ. ' 0*1 +ꢗ
ꢐ. ' )* +ꢗ
1&D
0&0
$
ꢆꢚ
)2
3)
ꢈC
ꢈC
ꢐ. ' 0*1 +ꢗ
ꢐ. ' 0*1 +ꢗ
3D&2
ꢒ3&ꢒ
®
ꢓ445
Gꢆꢆ
ꢓꢚ ' 3* ꢘ
31
)
ꢘ
SEMITOP 3
ꢎꢌIꢎꢋ ' )D11 ꢘI<ꢄ
<ꢗ
%
$
ꢗꢗ' B11$
0&ꢒB
0&**
ꢈH
JIꢛ
"ꢈ
ꢍ
ꢆꢆ
IGBT Module
4ꢋꢑ=.?ꢄ>
5ꢄ
#ꢃꢆ ꢎꢌꢉꢎꢃ
ꢋꢉ ꢑꢃ!ꢋ ꢄꢌꢂK
)&)*
)&*
ꢇ
31
SK35GD12T4ET
Temperature sensor
4011
ꢐꢄ '011+ꢗ =4)*'*KC>
ꢒD37*L
C
Target Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
ꢁꢂꢃ ꢄꢅꢆꢃꢇ ꢈꢉꢊꢂꢋꢌꢂꢍ ꢈꢉꢎꢊꢏꢃ
ꢐꢆꢃꢂꢅꢑꢒ ꢓꢔꢕꢐ ꢋꢃꢅꢑꢂꢉꢏꢉꢍꢖ
ꢗꢘꢙꢒ ꢋꢃꢅꢑꢂꢉꢏꢉꢍꢖ ꢚꢛ
ꢓꢂꢋꢃꢍꢆ!ꢋꢃꢎ "ꢐꢗ ꢋꢃꢈ#ꢃꢆ!ꢋꢊꢆꢃ
ꢀ
ꢀ
ꢀ
ꢀ
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
ꢄꢃꢂꢄꢉꢆ
Typical Applications*
Remarks
$
& $ ' ꢅꢑꢌ# ꢏꢃ(ꢃꢏ (!ꢏꢊꢃ
ꢀ
ꢗ%&ꢄ!ꢋ
ꢚ
GD-ET
2
14-05-2009 DIL
© by SEMIKRON
SK35GD12T4ET
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
3
14-05-2009 DIL
© by SEMIKRON
SK35GD12T4ET
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
14-05-2009 DIL
© by SEMIKRON
SK35GD12T4ET
ꢗ!ꢄꢃ ꢐ*) =-ꢊꢍꢍꢃꢄꢋꢃꢎ ꢑꢉꢏꢃ ꢎꢌ!ꢈꢃꢋꢃꢆ ,ꢉꢆ ꢄꢉꢏꢎꢃꢆ #ꢌꢂꢄ !ꢂꢎ #ꢏ!ꢄꢋꢌꢅ ꢈꢉꢊꢂꢋꢌꢂꢍ #ꢌꢂꢄM )ꢈꢈ>
ꢗ!ꢄꢃ ꢐ *)
ꢔ ?%ꢐ
5
14-05-2009 DIL
© by SEMIKRON
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