SK35GD065ET_0702 [SEMIKRON]
IGBT Module; IGBT模块![SK35GD065ET_0702](http://pdffile.icpdf.com/pdf1/p00117/img/icpdf/SK35GD065ET_644355_icpdf.jpg)
型号: | SK35GD065ET_0702 |
厂家: | ![]() |
描述: | IGBT Module |
文件: | 总5页 (文件大小:636K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SK35GD065ET
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Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢊ
Values
Units
1ꢁ23
#4 , -. /ꢁ
677
9.
1
'
'
%
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#ꢊ , -. /ꢁ
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1ꢁꢁ , ;77 1? 1&2 @ -7 1? #4 , 8-. /ꢁ
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SEMITOP 3
Inverse Diode
IGBT Module
%
#4 , 8.7 /ꢁ
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Module
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Preliminary Data
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Features
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Characteristics
Symbol Conditions
IGBT
ꢊ
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢀ
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min.
typ.
max. Units
1&2ꢘꢇꢕꢛ
1&2 , 1ꢁ20 %ꢁ , 8 ꢃ'
;
9
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1
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1
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1&2 , 7 10 1ꢁ2 , 1ꢁ23
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ꢊꢉꢍꢊꢂꢏ
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#4 , 8-. /ꢁ
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8-7
&23
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#4 , -. /ꢁ
1ꢁ27
80-
808
86
--
-
80;
80-
-9
Typical Applications
#4 , 8-. /ꢁ
#4 , -./ꢁ
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ꢏꢁ2
1&2 , 8. 1
ꢃG
ꢃG
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#4 , 8-./ꢁ
#4 , -./ꢁꢆꢕꢋꢄꢔꢉ+E
#4 , 8-./ꢁꢆꢕꢋꢄꢔꢉ+E
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ꢄꢉꢏ %&ꢚ#
8
JK*
ꢇꢕꢘ4Dꢊꢛ
GD-ET
1
21-02-2007 SCT
© by SEMIKRON
SK35GD065ET
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
1) , 12ꢁ
%
)ꢍꢂꢃ , .7 '? 1&2 , 7 1
#4 , -. /ꢁꢆꢕꢋꢄꢔꢉ+E
#4 , 8-. /ꢁꢆꢕꢋꢄꢔꢉ+E
#4 , -. /ꢁ
80L
80L
8
-0;
-09
808
1
1
1)7
1
#4 , 8-. /ꢁ
#4 , -. /ꢁ
70L
8:
-7
1
ꢏ)
-9
-:
ꢃG
ꢃG
#4 , 8-. /ꢁ
#4 , 8-. /ꢁ
®
%
%)ꢍꢂꢃ , .7 '
.C
'
SEMITOP 3
<<=
Mꢏꢏ
2ꢏꢏ
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1ꢁꢁ, ;771
906
Bꢁ
70L
ꢃI
JK*
!ꢃ
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IGBT Module
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=
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-0-.
ꢊ
ꢐ
;7
SK35GD065ET
Temperature sensor
<
#ꢊ ,877/ꢁ ꢘ<-.,.NGꢛ
9L;>.O
G
877
Preliminary Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢀ
ꢀ
ꢀ
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
ꢔꢇꢏꢅꢓꢅꢊꢇ !"# ꢇꢉꢆꢕꢍꢂꢔꢂꢌ$ %&ꢚ#
ꢁ'( ꢇꢉꢆꢕꢍꢂꢔꢂꢌ$ )*ꢙ
%ꢍꢇꢉꢌꢏꢅꢇꢉꢈ !#ꢁ ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ
ꢊꢉꢍꢊꢂꢏ
ꢀ
ꢀ
ꢀ
Typical Applications
%ꢍ+ꢉꢏꢇꢉꢏ
ꢀ
GD-ET
2
21-02-2007 SCT
© by SEMIKRON
SK35GD065ET
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
21-02-2007 SCT
© by SEMIKRON
SK35GD065ET
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
21-02-2007 SCT
© by SEMIKRON
SK35GD065ET
UL recognized file
no. E 63 532
ꢁꢅꢊꢉ #.- ꢘ3ꢑꢌꢌꢉꢊꢇꢉꢈ ꢕꢂꢔꢉ ꢈꢋꢅꢃꢉꢇꢉꢏ0 ꢋꢍ ꢇꢕꢉ "ꢁꢚ0 ꢓꢂꢏ ꢊꢂꢔꢈꢉꢏ ꢄꢋꢍꢊ ꢅꢍꢈ ꢄꢔꢅꢊꢇꢋꢆ ꢃꢂꢑꢍꢇꢋꢍꢌ ꢄꢋꢍꢊP -ꢃꢃꢛ
ꢁꢅꢊꢉ # .-
&ꢙD2#
5
21-02-2007 SCT
© by SEMIKRON
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