SK35GD126ET_07 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK35GD126ET_07 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总5页 (文件大小：699K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK35GD126ET
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Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢊ
Values
Units
1ꢁ23
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Inverse Diode
IGBT Module
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Preliminary Data
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Features
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Characteristics
Symbol Conditions
IGBT
ꢊ
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ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
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min.
typ.
max. Units
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ꢊꢉꢍꢊꢂꢏ
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#4 , -. /ꢁ
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1ꢁ27
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Typical Applications
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KL*
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GD-ET
1
21-02-2007 SCT
© by SEMIKRON
SK35GD126ET
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
1) , 12ꢁ
%)ꢍꢂꢃ , :. '@ 1&2 , 7 1
#4 , -. /ꢁꢆꢕꢋꢄꢔꢉ+E
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1
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1
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=
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SK35GD126ET
Temperature sensor
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Preliminary Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
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This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
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ꢊꢉꢍꢊꢂꢏ
ꢀ
ꢀ
ꢀ
Typical Applications
%ꢍ+ꢉꢏꢇꢉꢏ
ꢀ
GD-ET
2
21-02-2007 SCT
© by SEMIKRON
SK35GD126ET
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
21-02-2007 SCT
© by SEMIKRON
SK35GD126ET
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
21-02-2007 SCT
© by SEMIKRON
SK35GD126ET
UL recognized file
no. E 63 532
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ꢁꢅꢊꢉ # .-
&ꢙD2#
5
21-02-2007 SCT
© by SEMIKRON
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