SEMIX253GB176HD [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX253GB176HD |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总4页 (文件大小：1120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 253GB176HD
ꢋ ꢏ &'(ꢕ) ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Absolute Maximum Ratings
Symbol Conditions
ꢍ
Values
Units
IGBT
ꢔꢕꢖꢉ
*+,,
&', ꢗ*/,ꢘ
2,,
ꢔ
"
-
-
ꢋꢍ ꢏ &' ꢗ/,ꢘ (ꢕ
ꢕ
ꢑꢚ ꢏ * ꢃꢈ
"
ꢕ01
ꢔ3ꢖꢉ
4 &,
ꢔ
ꢋꢛ5) ꢗꢋꢈꢑꢄ
ꢘ
ꢋ6%ꢖ0"ꢋ-67 8 ꢋꢈꢑꢄ
"ꢕ) * ꢃꢊꢆ;
9 :, ;;; < *', ꢗ*&'ꢘ
(ꢕ
ꢔꢊꢈꢂꢒ
:,,,
ꢔ
Inverse diode
®
SEMiX 3
-
ꢋꢍ ꢏ &' ꢗ/,ꢘ (ꢕ
&:, ꢗ*+,ꢘ
2,,
"
"
=
-
ꢑꢚ ꢏ * ꢃꢈ
=01
-
ꢑꢚ ꢏ *, ꢃꢈ> ꢈꢊꢆ;> ꢋ5 ꢏ &' (ꢕ
*',,
"
=ꢉ1
Trench IGBT Modules
ꢋ ꢏ &'(ꢕ) ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Characteristics
Symbol Conditions
IGBT
ꢍ
min.
typ.
max. Units
SEMiX 253GB176HD
ꢔ3ꢖꢗꢑꢎꢘ
ꢔ3ꢖ ꢏ ꢔꢕꢖ) -ꢕ ꢏ ? ꢃ"
')&
')/
?):
*
ꢔ
ꢃ"
ꢔ
-
ꢔ3ꢖ ꢏ ,) ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ) ꢋ5 ꢏ &' ꢗ*&'ꢘ (ꢕ
ꢋ5 ꢏ &' ꢗ*&'ꢘ (ꢕ
ꢕꢖꢉ
ꢔꢕꢖꢗꢋ6ꢘ
ꢌꢕꢖ
* ꢗ,)@ꢘ
*)& ꢗ*)*ꢘ
/)2 ꢗ*&ꢘ
Preliminary Data
ꢔ3ꢖ ꢏ *' ꢔ) ꢋ5 ꢏ &' ꢗ*&'ꢘ (ꢕ
?)+ ꢗ*,)2ꢘ
ꢃA
ꢔꢕꢖꢗꢈꢐꢑꢘ
-ꢕꢆꢂꢃ ꢏ *', ") ꢔ3ꢖ ꢏ *' ꢔ)
& ꢗ&):'ꢘ
&):' ꢗ&)@ꢘ
ꢔ
ꢋ5 ꢏ &' ꢗ*&'ꢘ (ꢕ) ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
Features
ꢕꢊꢅꢈ
ꢕꢂꢅꢈ
ꢕꢌꢅꢈ
Cꢕꢖ
ꢇꢆ#ꢅꢌ ꢂꢒꢒꢂꢙꢊꢆꢄ ꢍꢂꢆ#ꢊꢑꢊꢂꢆꢈ
*&
,)'
,):
&,
ꢆ=
ꢆ=
ꢆ=
ꢆꢁ
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢔ3ꢖ ꢏ ,) ꢔꢕꢖ ꢏ &' ꢔ) ꢏ * 1ꢁB
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
0ꢕꢕD<ꢖꢖD
ꢑꢅꢌꢃꢊꢆꢐꢒ9ꢍꢎꢊꢚ) ꢋꢍꢏ &' ꢗ*&'ꢘ (ꢕ
,)+ ꢗ*ꢘ
ꢃA
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢀ
ꢑ#ꢗꢂꢆꢘEꢑꢌ
ꢔꢕꢕ ꢏ *&,, ꢔ) -ꢕꢆꢂꢃ ꢏ *', "
ꢔ3ꢖ ꢏ 4 *' ꢔ
*@, E :'
ꢆꢈ
ꢆꢈ
ꢑ#ꢗꢂ ꢘEꢑ
/2, E *2,
Typical Applications
ꢖꢂꢆ ꢗꢖꢂ
ꢘ
03ꢂꢆ ꢏ 03ꢂ ꢏ @)& A) ꢋ5 ꢏ *&' (ꢕ
@' ꢗ''ꢘ
ꢃF
"ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ #ꢌꢊꢛꢅꢈ
$%ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢙꢅꢒ#ꢅꢌꢈ
ꢀ
ꢀ
ꢀ
Inverse diode
ꢔ= ꢏ ꢔꢖꢕ
-=ꢆꢂꢃ ꢏ *', "> ꢔ3ꢖ ꢏ , ꢔ> ꢋ5 ꢏ &' ꢗ*&'ꢘ
*)+ ꢗ*)+ꢘ
*)@ ꢗ*)@ꢘ
ꢔ
(ꢕ) ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
ꢔꢗꢋ6ꢘ
ꢌꢋ
ꢋ5 ꢏ &' ꢗ*&'ꢘ (ꢕ
ꢋ5 ꢏ &' ꢗ*&'ꢘ (ꢕ
*)* ꢗ,)@ꢘ
: ꢗ')2ꢘ
ꢗ&2,ꢘ
*)2 ꢗ*)*ꢘ
: ꢗ')2ꢘ
ꢔ
ꢃA
"
-
-=ꢆꢂꢃ ꢏ *', "> ꢋ5 ꢏ &' ꢗ*&'ꢘ (ꢕ
001
Gꢌꢌ
ꢖꢌꢌ
#ꢊE#ꢑ ꢏ 2:,, "EHꢈ
ꢗ'/ꢘ
Hꢕ
ꢔ3ꢖ ꢏ 9*' ꢔ
ꢗ2'ꢘ
ꢃF
Thermal characteristics
0ꢑꢎꢗ59ꢍꢘ
ꢚꢅꢌ -3Iꢋ
,)*&
,)*+
JEK
JEK
JEK
0ꢑꢎꢗ59ꢍꢘL
0ꢑꢎꢗ59ꢍꢘ=L
ꢚꢅꢌ -ꢆꢛꢅꢌꢈꢅ Lꢊꢂ#ꢅ
ꢚꢅꢌ =KL
0ꢑꢎꢗꢍ9ꢈꢘ
ꢚꢅꢌ ꢃꢂ#ꢇꢒꢅ
,),:
JEK
Temperature sensor
0&'
ꢋꢍ ꢏ &' (ꢕ
' 4'M
2:&,
NO
J
I&'E/'
0&ꢏ0*ꢅPꢚQIꢗ*Eꢋ&9*Eꢋ*ꢘR > ꢋQJR>I
Mechanical data
1ꢈE1ꢑ
ꢑꢂ ꢎꢅꢐꢑꢈꢊꢆN ꢗ1'ꢘ E ꢂꢌ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ ꢗ1?ꢘ
2E&)'
' E'
7ꢃ
ꢄ
ꢙ
&/@
GB
1
15-06-2005 SEN
© by SEMIKRON
SEMiX 253GB176HD
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
15-06-2005 SEN
© by SEMIKRON
SEMiX 253GB176HD
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 Transient thermal impedance of FWD
Fig. 12 Typ. CAL diode peak reverse recovery current
Fig. 9 Transient thermal impedance of IGBT
Fig. 11 CAL diode forward charact., incl. RCC´+EE´
3
15-06-2005 SEN
© by SEMIKRON
SEMiX 253GB176HD
Fig. 13 Typ. CAL diode recovered charge
3I
ꢕꢐꢈꢅ ꢉꢖ1ꢊS 2
ꢕꢐꢈꢅ ꢉꢖ1ꢊS 2
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
15-06-2005 SEN
© by SEMIKRON
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