HTB1-800 [SEMIHOW]
BI-DIRECTIONAL TRIODE THYRISTOR; 双向晶闸管
| 型号： | HTB1-800 |
| 厂家： | 
SEMIHOW CO.,LTD. |
| 描述： | BI-DIRECTIONAL TRIODE THYRISTOR |
| 文件： | 总4页 (文件大小：439K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HTB1-800
BI-DIRECTIONAL TRIODE THYRISTOR
(TRIAC)
VDRM = 800 V
IT(RMS) = 1.0A
FEATURES
3.T2
Symbol
Repetitive Peak Off-State Voltage: 800V
R.M.S On-state Current (IT(RMS)=1A)
High Commutation dv/dt
2.Gate
1.T1
TO-92
1. T1
2. Gate
3. T2
General Description
3
The TRIAC HTB1-800 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
2
1
Absolute Maximum Ratings
(
a
T =25℃)
Symbol
Parameter
Value
800
1
Units
V
V
DRM
Repetitive Peak Off-State Voltage
IT(RMS)
ITSM
R.M.SOn-State Current (Ta = 95 )
℃
A
Surge On-State Current
(One Cycle, 50/60Hz, Peak, Non Repetitive)
9.1/10
A
V
PeakGateVoltage
Peak Gate Current
6
0.5
V
A
GM
IGM
PG(AV)
PGM
Average Gate Power Dissipation
Peak Gate Power Dissipation
Storage Temperature Range
OperatingTemperature
0.1
W
W
1
TSTG
-40 to +125
-40 to +125
℃
℃
T
j
◎ SEMIHOW REV.1.0 Jan 2006
(
Ta=25 )
℃
Electrical Characteristics
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
1+, 1-, 3-
3+
5
mA
mA
V
IGT
Gate Trigger Current V =6V, R =10
Ω
D L
10
1.8
2.0
1+, 1-, 3-
3+
V
GT
Gate Trigger Voltage V =6V, R =10
Ω
D L
V
Non Trigger Gate
Volt age
T =125 , V =1/2V
DRM
V
GD
0.2
2.0
V
℃
j
D
Critical Rate of Rise of
(dv/dt)c Off-State Voltage at
Communication
T =125 , V =2/3V
DRM
℃
(di/dt)c=-0.5A/ms
j
D
V/uS
IH
HoldingCurrent
10
0.5
1.6
mA
mA
V
V =VDRM, Single Phase, Half Wave,
D
RepetitivePeakOff-
State Current
IDRM
T =125
j
℃
IT=6A, Inst, Measurement
V
TM
PeakOn-StateVoltage
Thermal Characteristics
Symbol
RTH(j-c)
RTH(j-a)
Parameter
Thermal Resistance
Thermal Resistance
Test Conditions
Junction to Case
Min
Typ
Max
50
Units
℃/W
℃/W
Junction to Ambient
120
◎ SEMIHOW REV.1.0 Jan 2006
Performance Curves
Fig 1. Gate Characteristics
Fig 2.On-State Voltage
101
100
10-1
101
100
10-1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
100
101
102
103
On-state Voltage (V)
Gate Current (mA)
Fig 4. On State Current
vs. Maximum Power Dissipation
Fig 3. Gate Trigger Voltage
vs. Junction Temperature
1.5
1.2
10
V+
V-GGTT11
V+
0.9
0.6
V-GGTT31
1
0.3
0.0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-50
0
50
100
150
RMS On-State Current (A)
Junction Temperature (℃)
Fig 6. Surge On-State Current
Rating (Non-Repetitive)
Fig 5. On State Current
vs. Allowable Case Temperature
12
10
8
130
120
110
100
90
6
80
70
4
60
2
50
40
0
101
102
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
RMS On-State Current (A)
Time (Cycles)
◎ SEMIHOW REV.1.0 Jan 2006
Fig8. Transient Thermal
Impedance
Fig 7. Gate Trigger Current
vs. Junction Temperature
103
10
102
1
101
100
10-2
0.1
101
10-1
100
102
103
-50
0
50
100
150
Junction Temperature (℃)
Time (Sec)
Fig 7. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
RG
A
RG
A
6V
6V
V
V
Test Procedure I
Test Procedure II
10Ω
10Ω
RG
RG
A
A
6V
6V
V
V
Test Procedure III
Test Procedure IV
◎ SEMIHOW REV.1.0 Jan 2006
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