2N6988 [SEMICOA]
Type 2N6988 Geometry 0600 Polarity PNP; 类型2N6988几何0600极性PNP
| 型号： | 2N6988 |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Type 2N6988 Geometry 0600 Polarity PNP |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. 2N6988
Ge ne ric Pa rt Numbe r:
2N6988
Type 2N6988
Geometry 0600
Polarity PNP
REF: MIL-PRF-19500/558
Qual Level: JAN - JANS
Features:
·
General purpose silicon transistor
for switching and amplifier applica-
tions.
·
·
Housed in a 14-Lead Flat Package.
Also available in chip form using the
0600 chip geometry.
·
The Min and Max limits shown are
per MIL-PRF-19500/558 which
Semicoa meets in all cases.
14L-FlatPack
·
·
The Typ values are actual batch av-
erages for Semicoa.
Radiation Graphs available.
Maximum Ratings
TC = 25oC unless otherwise specified
Rating
Symbol
VCEO
VCBO
VEBO
IC
Rating
60
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
60
V
5.0
V
600
mA
oC
TJ
-65 to +200
-65 to +200
oC
TSTG
Data Sheet No. 2N6988
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Collector-Base Breakdown Voltage
IC = 10 µA
Symbol Min
Typ
Max
Unit
V
60
60
5.0
---
100
---
V
(BR)CBO
Collector-Emitter Breakdown Voltage
IC = 10 mA
V
(BR)CEO
70
9.0
---
---
10
50
V
V
Emitter-Base Breakdown Voltage
IE = 10 µA, pulsed
V
(BR)EBO
Collector-Base Cutoff Current
VCB = 50 V
ICBO1
IEBO
0.25
0.1
nA
nA
Emitter-Base Cutoff Current
VEB = 3.5 V
---
ON Characteristics
DC Current Gain
Symbol
Min
Typ
Max
Unit
IC = 100 µA, VCE = 10 V
hFE1
hFE2
hFE3
hFE4
hFE5
75
100
100
100
50
225
250
---
---
450
---
---
---
---
---
---
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V (pulse test)
180
80
300
---
IC = 500 mA, VCE = 10 V (pulse test)
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
VCE(sat)1
VCE(sat)2
---
---
0.18
0.5
0.4
1.6
V dc
V dc
IC = 500 mA, IB = 50 mA (pulse test)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
VBE(sat)1
VBE(sat)2
---
---
0.87
1.0
1.3
2.6
V dc
V dc
IC = 500 mA, IB = 50 mA (pulse test)
Small Signal Characteristics
Short Circuit Forward Current Transfer Ratio
IC = 1 mA, VCE = 10 V, f = 1kHz
Symbol
Min
Typ
Max
Unit
AC hFE
100
250
---
---
Open Circuit Output Capacitance
COBO
---
---
6.0
8.0
8.0
30
pF
pF
VCB = 10 V, IE = 0 V, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 2.0 V, IC = 0, 100 kHz < f < 1 MHz
C
IBO
Switching Characteristics
Saturated Turn On Switching Time to 90%
16V, 50 ohm input pulse
Symbol
Min
Typ
Max
Unit
tON
---
25
45
ns
Saturated Turn Off Switching Time to 10%
16V, 50 ohm input pulse
tOFF
---
200
300
ns
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