2N6988_04 [SEMICOA]
Silicon PNP Transistor; 硅PNP晶体管
| 型号： | 2N6988_04 |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Silicon PNP Transistor |
| 文件： | 总2页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N6988
Silicon PNP Transistor
Data Sheet
Description
Applications
• General purpose switching
• 4 Transistor Array
• PNP silicon transistor
Complement to the 2N6990
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N6988J)
• JANTX level (2N6988JX)
• JANTXV level (2N6988JV)
• JANS level (2N6988JS)
• QCI to the applicable level
Features
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Hermetically sealed 14 Lead Flat Pack
• Also available in chip configuration
• Chip geometry 0600
• Reference document:
• Radiation testing (total dose) upon request
MIL-PRF-19500/558
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
TC = 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter
Symbol
Rating
60
Unit
Volts
Volts
Collector-Emitter Voltage
VCEO
VCBO
Collector-Base Voltage
Emitter-Base Voltage
60
Volts
mA
VEBO
IC
5
Collector Current, Continuous
600
Power Dissipation, TA = 25OC
0.4
2.286
W
mW/°C
°C
PT
Derate linearly above 25OC
Operating Junction Temperature
Storage Temperature
TJ
-65 to +200
-65 to +200
°C
TSTG
Semicoa
Copyright© 2003
Rev. D.2
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N6988
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
Off Characteristics
characteristics specified at TA = 25°C
Parameter
Symbol
V(BR)CEO IC = 10 mA
ICBO1 VCB = 60 Volts
ICBO2
Test Conditions
Min
Typ
Max
Units
Volts
Collector-Emitter Breakdown Voltage
60
10
10
µA
nA
µA
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
VCB = 50 Volts
ICBO3
10
VCB = 50 Volts, TA = 150°C
IEBO1
IEBO2
VEB = 5 Volts
VEB = 4 Volts
10
50
µA
nA
Pulse Test: Pulse Width = 300 µs, Duty Cycle <2.0%
On Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
TA = -55°C
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
75
100
100
100
50
450
300
DC Current Gain
50
VBEsat1
VBEsat2
VCEsat1
VCEsat2
1.3
2.6
0.4
1.6
Base-Emitter Saturation Voltage
Volts
Volts
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
VCE = 20 Volts, IC = 20 mA,
f = 100 MHz
VCE = 10 Volts, IC = 1 mA,
f = 1 kHz
|hFE|
2
hFE
100
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
VEB = 2 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
pF
Open Circuit Output Capacitance
COBO
CIBO
8
pF
Open Circuit Input Capacitance
Transistor to Transistor Resistance
30
|RT-T
|
|VT-T| = 500 Volts
1010
Ω
Switching Characteristics
Saturated Turn-On Time
ns
ns
tON
45
Saturated Turn-Off Time
tOFF
300
Semicoa
Copyright© 2003
Rev. D.2
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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