2N6989JANTX [MICROSEMI]
MULTIPLE NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR; 多NPN硅双列直插式和FLATPACK开关晶体管
| 型号： | 2N6989JANTX |
| 厂家： | 
Microsemi |
| 描述： | MULTIPLE NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR |
| 文件： | 总2页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK
SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/ 559
Devices
Qualified Level
JAN
2N6989
2N6989U
JANTX
JANTXV
JANS
2N6990
MAXIMUM RATINGS (1)
Ratings
Symbol
Value
50
Units
Vdc
Collector-Emitter Voltage (3)
Collector-Base Voltage (3)
Emitter-Base Voltage (3)
Collector Current (3)
VCEO
VCBO
VEBO
IC
75
Vdc
TO- 116*
2N6989
6.0
Vdc
800
mAdc
Total Power Dissipation
@ TA = +250C
2N6989(2)
1.5
1.0
0.4
W
0C
PD
2N6989U(2)
20 PIN LEADLESS*
2N6989U
2N6990(2)
Operating & Storage Junction Temperature Range
-65 to +200
Top, T
stg
1) Maximum voltage between transistors shall be ³ 500 Vdc
2) Derate linearly 8.57 mW/0C above TA = +250C for 2N6989 and 2N6989U
Derate linearly 2.286 mW/0C above TA = +250C for 2N6990
Ratings apply to total package.
14 PIN FLAT PACK*
2N6990
3) Ratings apply to each transistor in the array.
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
50
Vdc
V(BR)
CEO
Collector-Base Cutoff Current
VCB = 60 Vdc
VCB = 75 Vdc; Ic= 10 mAdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc
ICBO
hAdc
mAdc
10
10
IEBO
hAdc
mAdc
10
10
VEB = 6.0Vdc; Ic= 10 mAdc
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N6989, 2N6990 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (4)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
50
75
100
100
30
325
300
hFE
0.3
1.0
Vdc
Vdc
VCE(sat)
0.6
1.2
2.0
VBE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz
Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Input Capacitance
2.5
50
8.0
½hfe½
hfe
8.0
25
pF
pF
Cobo
Cibo
VEB = 0.5 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
(4) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
相关型号：
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