2N6989 [SEMICOA]
Type 2N6989 Geometry 0400 Polarity NPN; 类型2N6989几何0400极性NPN
| 型号： | 2N6989 |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Type 2N6989 Geometry 0400 Polarity NPN |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. 2N6989
Ge ne ric Pa rt Numbe r:
2N6989
Type 2N6989
Geometry 0400
Polarity NPN
REF: MIL-PRF-19500/559
Qual Level: JAN - JANS
Features:
·
An array of four independent NPN
silicon switching transistors.
·
·
Housed in a cerdip case.
Also available in chip form using
the 0400 chip geometry.
·
The Min and Max limits shown are
per MIL-PRF-19500/559 which
Semicoa meets in all cases.
·
·
The Typ values are actual batch
Cerdip
averages for Semicoa.
Radiation Graphs available.
Maximum Ratings
TC = 25oC unless otherwise specified
Rating
Symbol
VCEO
VCBO
VEBO
IC
Rating
50
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
75
V
6.0
V
800
mA
oC
TJ
-65 to +200
-65 to +200
oC
TSTG
Data Sheet No. 2N6989
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Collector-Base Breakdown Voltage
IC = 10 µA
Symbol Min
Typ
Max
Unit
V
75
50
6.0
---
120
---
V
(BR)CBO
Collector-Emitter Breakdown Voltage
IC = 10 mA, pulsed
V
(BR)CEO
65
7.0
3.0
2.0
0.5
---
---
50
10
10
V
Emitter-Base Breakdown Voltage
IE = 10 µA
V
(BR)EBO
V
Collector-Emitter Cutoff Current
VCE = 50 V
ICES
ICBO1
IEBO
nA
nA
nA
Collector-Base Cutoff Current
VCB = 60 V
---
Emitter-Base Cutoff Current
VEB = 4 V
---
ON Characteristics
DC Current Gain
Symbol
Min
Typ
Max
Unit
IC = 100 µA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V (pulse test)
hFE1
hFE2
hFE3
hFE4
hFE5
50
75
180
200
200
200
75
---
325
---
---
---
---
---
---
100
100
30
300
---
IC = 500 mA, VCE = 10 V (pulse test)
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
VCE(sat)1
VCE(sat)2
---
---
0.1
0.3
0.3
1.0
V dc
V dc
IC = 500 mA, IB = 50 mA (pulse test)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
VBE(sat)1
VBE(sat)2
0.6
---
0.85
1.0
1.2
2.0
V dc
V dc
IC = 500 mA, IB = 50 mA (pulse test)
Small Signal Characteristics
Short Circuit Forward Current Transfer Ratio
IC = 1 mA, VCE = 10 V, f = 1kHz
Symbol
Min
Typ
Max
Unit
AC hFE
50
240
---
---
Open Circuit Output Capacitance
COBO
---
---
4.5
8
pF
pF
VCB = 10 V, IE = 0 V, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
C
IBO
17.5
25
Switching Characteristics
Saturated Turn On Switching Time to 90%
16V, 50 ohm input pulse
Symbol
Min
Typ
Max
Unit
tON
---
14
35
ns
Saturated Turn Off Switching Time to 10%
16V, 50 ohm input pulse
tOFF
---
175
300
ns
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