2N4150 [SEMICOA]
Type 2N4150 Geometry 9201 Polarity NPN; 类型2N4150几何9201极性NPN
| 型号： | 2N4150 |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Type 2N4150 Geometry 9201 Polarity NPN |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. 2N4150
Ge ne ric Pa rt Numbe r:
2N4150
Type 2N4150
Geometry 9201
Polarity NPN
Qual Level: JAN - JANTXV
REF: MIL-PRF-19500/394
Features:
·
Power switching transistor for high
speed switching applicatons.
·
·
Housed in a TO-5 case.
Also available in chip form using
the 9201 chip geometry.
·
The Min and Max limits shown are
per MIL-PRF-19500/394 which
Semicoa meets in all cases.
TO-5
Maximum Ratings
TC = 25oC unless otherwise specified
Rating
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
70
V
VCBO
VEBO
IC
Collector-Base Voltage
Emitter-Base Voltage
100
10
V
V
A
Collector Current, Continuous
10
Power Dissipation at 25oC ambient
Derate above 25oC
1.0
5.7
mW
mW/oC
W
mW/oC
oC/mW
oC/mW
PT
Power Dissipation at 25oC ambient
Derate above 25oC
5.0
PT
50
RJC
RJA
0.020
0.175
Thermal Impedance
oC
TJ
Operating Junction Temperature
Storage Temperature
-65 to +200
-65 to +200
oC
TSTG
Data Sheet No. 2N4150
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 10 µA
V(BR)CBO
100
---
V
Collector-Emitter Breakdown Voltage
IC = 0.1 A, pulsed
V(BR)CEO
V(BR)EBO
70
---
---
V
V
Emitter-Base Breakdown Voltage
IE = 10 µA
7.0
Collector-Emitter Cutoff Current
VCE = 60 V
ICEO1
ICEX
ICEX2
---
---
10
10
100
µA
µA
µA
VBE = 0.5 V, VCE = 100 V
VBE = -0.5 V, VCE = 80 V, TC = +150oC
Emitter-Base Cutoff Current
VEB = 5V
IEBO
---
---
0.1
0.1
µA
µA
Collector-Base Cutoff Current
VCB = 80 V
ICBO
ON Characteristics
Symbol
Min
Max
Unit
Forward current Transfer Ratio
IC = 1 A, VCE = 5 V, pulsed
IC = 5 A, VCE = 5.0 V, pulsed
IC = 10 A, VCE = 5 V
hFE1
hFE2
hFE3
hFE4
50
40
10
20
200
120
---
---
---
---
---
IC = 5 A, VCE = 5.0 V, TC = -55oC
---
Collector-Emitter Saturation Voltage
IC = 5 A, IB = 0.5 A pulsed
VCE(sat)1
VCE(sat)2
---
---
0.6
2.5
V dc
V dc
IC = 10 A, IB = 1 A, pulsed
Base-Emitter Saturation Voltage
IC = 5 A, IB = 0.5 A, pulsed
VBE(sat)1
VBE(sat)2
---
---
1.5
2.5
V dc
V dc
IC = 10 A, IB = 1 A, pulsed
Safe Operating Area, Continuous DC
VCE = 40 V, IC = 0.22 A
VCE = 70 V, IC = 90 mA
TC = 25oC, t = 1.0 s
Small Signal Characteristics
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
VCE = 10 V, IC = 0.2 A, f = 10 MHz
Symbol
Min
Max
Unit
|hfe|
1.5
7.5
---
Open Circuit Output Capacitance
COBO
---
350
160
pF
---
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Small Signal, Short Circuit, Forward Current
VCE = 10 V, IC = 50 mA, f = 1 kHz
h
fe
40
Switching Characteristics
Delay Time
Per Figure 4, MIL-PRF-19500/394C
Rise Time
Per Figure 4, MIL-PRF-19500/394C
Storage Time
Per Figure 4, MIL-PRF-19500/394C
Fall Time
Symbol
Min
Max
Unit
td
---
50
ns
tr
ts
tf
---
---
---
500
1.5
50
ns
ns
ns
Per Figure 4, MIL-PRF-19500/394C
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