2N4150S_02 [SEMICOA]
Silicon NPN Transistor; 硅NPN晶体管
| 型号： | 2N4150S_02 |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Silicon NPN Transistor |
| 文件： | 总2页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N4150S
Data Sheet
Description
Applications
• General purpose
• Low power, High voltage
• NPN silicon transistor
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N4150SJ)
• JANTX level (2N4150SJX)
• JANTXV level (2N4150SJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 3101
• Reference document:
MIL-PRF-19500/394
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
• Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
VCEO
VCBO
Rating
70
100
Unit
Volts
Volts
Volts
A
VEBO
IC
10
Collector Current, Continuous
10
W
Power Dissipation, TA = 25°C
Derate linearly above 25°C
Power Dissipation, TC = 25°C
Derate linearly above 100°C
1
PT
5.7
mW/°C
W
5
PT
50
mW/°C
RθJA
.175
Thermal Resistance
°C/W
°C
.020
RθJC
TJ
Operating Junction Temperature
Storage Temperature
-65 to +200
TSTG
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N4150S
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Symbol
V(BR)CEO IC = 100 mA
Test Conditions
Min
70
Typ
Max
Units
Volts
ICBO1
ICBO2
ICEO
VCB = 100 Volts
VCB = 80 Volts,
VCE = 60 Volts
10
µA
nA
µA
Collector-Base Cutoff Current
100
Collector-Emitter Cutoff Current
10
VCE = 60Volts, VEB= .5Volts
ICEX1
10
µA
V
CE = 60Volts, VEB= .5Volts,
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
ICEX2
100
TA = 150°C
IEBO1
IEBO2
VEB = 7 Volts
10
µA
V
EB = 5 Volts
100
nA
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
On Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
IC = 1 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 10 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
TA = -55°C
hFE1
hFE2
hFE3
hFE4
50
40
10
20
200
120
DC Current Gain
VBEsat1
VBEsat2
VCEsat1
VCEsat2
IC = 5 A, IB = 500 mA
IC = 10 A, IB = 1 A
IC = 5 A, IB = 500 mA
IC = 10 A, IB = 1 A
1.5
2.5
0.6
2.5
Volts
Volts
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Symbol
Test Conditions
Min
Typ
Max
Units
VCE = 10 Volts, IC = 200 mA,
|hFE|
1.5
7.5
f = 10 MHz
CE = 5 Volts, IC = 50 mA,
f = 1 kHz
V
hFE
40
160
350
V
CB = 10 Volts, IE = 0 mA,
pF
ns
Open Circuit Output Capacitance
COBO
100 kHZ < f < 1 MHz
Switching Characteristics
Delay Time
td
tr
ts
tf
50
IC = 5 A, IB = 500 mA,
Rise Time
500
1.5
500
Storage Time
Fall Time
µs
IC = 5 A, IB1= -IB2 = 500 mA
ns
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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