首页 |元器件品牌

2N4150_1 [MICROSEMI]

NPN POWER SILICON TRANSISTOR; NPN功率硅晶体管
2N4150_1
型号： 2N4150_1
厂家： Microsemi    Microsemi
描述：

NPN POWER SILICON TRANSISTOR
NPN功率硅晶体管

晶体 晶体管
文件： 总2页 (文件大小：101K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/394  
DEVICES  
LEVELS  
JAN  
JANTX  
JANTXV  
JANS  
2N4150  
2N4150S  
2N5237  
2N5237S  
2N5238  
2N5238S  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
2N4150  
2N5237  
2N5238  
Parameters / Test Conditions  
Symbol  
Unit  
2N4150S 2N5237S 2N5238S  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
70  
120  
150  
10  
170  
200  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Base Voltage  
Emitter-Base Voltage  
100  
Collector Current  
10  
Total Power Dissipation  
@ TA = +25°C (1)  
@ TC = +25°C (2)  
1.0  
15  
PT  
W
Operating & Storage Junction Temperature Range  
Tj , Tstg  
-65 to +200  
°C  
TO-5  
Thermal Resistance, Junction-to Case  
Junction- to Ambient  
RθJC  
RθJA  
10  
175  
°C/W  
2N4150, 2N5237, 2N5238  
1) Derate linearly @ 5.7mW/°C for TA > +25°C  
2) Derate linearly @ 100mW/°C for TC > +25°C  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERISTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 0.1mAdc  
70  
120  
170  
2N4150, 2N4150S  
2N5237, 2N5237S  
2N5238, 2N5238S  
V(BR)CEO  
Vdc  
Collector-Emitter Cutoff Current  
VBE = 0.5Vdc, VCE = 60Vdc  
VBE = 0.5Vdc, VCE = 110Vdc  
10  
10  
10  
2N4150, 2N4150S  
2N5237, 2N5237S  
2N5238, 2N5238S  
ICEX  
µAdc  
VBE = 0.5Vdc, VCE = 160Vdc  
TO-39  
(TO-205AD)  
2N4150S, 2N5237S, 2N5238S  
Collector-Emitter Cutoff Current  
VCE = 60Vdc  
2N4150, 2N4150S  
2N5237, 2N5237S  
2N5238, 2N5238S  
10  
10  
10  
ICEO  
µAdc  
µAdc  
VCE = 110Vdc  
VCE = 160Vdc  
Emitter-Base Cutoff Current  
VEB = 7.0Vdc  
10  
0.1  
IEBO  
VEB = 5.0Vdc  
T4-LDS-0014 Rev. 4 (082192)  
Page 1 of 2  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/394  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Collector-Base Cutoff Current  
VCB = 100Vdc  
VCB = 150Vdc  
10  
10  
10  
0.1  
2N4150, 2N4150S  
2N5237, 2N5237S  
2N5238, 2N5238S  
All Types  
ICBO  
µAdc  
VCB = 200Vdc  
VCB = 80Vdc  
ON CHARACTERISTICS (3)  
Forward-Current Transfer Ratio  
IC = 1.0Adc, VCE = 5.0Vdc  
2N4150, 2N4150S  
2N5237, 2N5237S  
2N5238, 2N5238S  
All Types  
50  
50  
50  
40  
10  
200  
225  
225  
120  
-
hFE  
IC = 5.0Adc, VCE = 5.0Vdc  
IC = 10Adc, VCE = 5.0Vdc  
All Types  
Collector-Emitter Saturation Voltage  
IC = 5.0Adc, IB = 0.5Adc  
IC = 10Adc, IB = 1.0Adc  
Base-Emitter Saturation Voltage  
IC = 5.0Adc, IB = 0.5Adc  
IC = 10Adc, IB = 1.0Adc  
VCE(sat)  
0.6  
2.5  
Vdc  
Vdc  
VBE(sat)  
1.5  
25  
DYNAMIC CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Magnitude of Common Emitter Small-Signal Short-Circuit  
Forward Current Transfer Ratio  
|hfe|  
1.5  
7.5  
IC = 0.2Adc, VCE = 10Vdc, f = 10MHz  
Forward Current Transfer Ratio  
40  
40  
40  
160  
160  
250  
IC = 50mAdc, VCE = 5.0V, f = 1.0kHz  
2N4150, 2N4150S  
2N5237, 2N5237S  
2N5238, 2N5238S  
hfe  
Output Capacitance  
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz  
Cobo  
350  
pF  
SWITCHING CHARACTERISTICS  
Parameters / Test Conditions  
Delay Time  
Symbol  
Min.  
Max.  
50  
Unit  
ns  
ns  
td  
tr  
ts  
tf  
V
CC = 20Vdc, VBB = 5.0Vdc  
IC = 5.0Adc, IB1 = 0.5Adc  
Rise Time  
500  
1.5  
µs  
Storage Time  
VCC = 20Vdc, VBB = 5.0Vdc  
IC = 5.0Adc, IB1 = -IB2 = -0.5Adc  
ns  
Fall Time  
500  
SAFE OPERATING AREA  
DC Tests  
TC = +25°C, 1 Cycle, t = 1.0s  
Test 1  
VCE = 40Vdc, IC = 0.22Adc  
Test 2  
VCE = 70Vdc, IC = 90mAdc  
Test 3  
VCE = 120Vdc, IC = 15mAdc  
2N5237, 2N5237S  
2N5238, 2N5238S  
VCE = 170Vdc, IC = 3.5mAdc  
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%  
T4-LDS-0014 Rev. 4 (082192)  
Page 2 of 2  

相关型号：

2N415A

 TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 200MA I(C) | TO-5
ETC

2N4166

 SCR, V(DRM) = 600V TO 699.9V
NJSEMI

2N4167

 SCRs
CENTRAL

2N4167

 Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 25; Max TMS Bridge Input Voltage: 5; Max DC Reverse Voltage: 2; Capacitance: 30; Package: TO-64
DIGITRON

2N4167

 8A, 25V, SCR, CASE 86-01, 2 PIN
MOTOROLA

2N4167LEADFREE

 Silicon Controlled Rectifier, 8A I(T)RMS, 25V V(RRM), 1 Element, TO-64
CENTRAL

2N4168

 SCRs
CENTRAL

2N4168

 SILICON CONTROLLED RECTIFIERS
MOTOROLA

2N4168

 Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 50; Max TMS Bridge Input Voltage: 5; Max DC Reverse Voltage: 2; Capacitance: 30; Package: TO-64
DIGITRON

2N4168LEADFREE

 暂无描述
CENTRAL

2N4169

 SCRs
CENTRAL

2N4169

 SILICON CONTROLLED RECTIFIERS
MOTOROLA
©2020 ICPDF网 联系我们和版权申明