2N4150S [MICROSEMI]
NPN POWER SILICON TRANSISTOR; NPN功率硅晶体管
| 型号： | 2N4150S |
| 厂家： | 
Microsemi |
| 描述： | NPN POWER SILICON TRANSISTOR |
| 文件： | 总3页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 394
Devices
Qualified Level
JAN
JANTX
JANTXV
2N4150
2N4150S
2N5237
2N5237S
2N5238
2N5238S
MAXIMUM RATINGS
2N4150 2N5237 2N5238
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol 2N4150S2N5237S2N5238S Unit
70
120
150
10
170
Vdc
Vdc
Vdc
Adc
VCEO
VCBO
VEBO
IC
100
200
TO- 5*
2N4150, 2N5237,
2N5238
10
Total Power Dissipation @ TA = +250C(1)
1.0
5.0
W
0C
PT
@ TC = +1000C(2)
Operating & Storage Junction Temp. Range
-65 to +200
TJ, T
stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
0.020
R
qJC
qJA
0C/mW
TO-39*
(TO-205AD)
2N4150S, 2N5237S,
2N5238S
Junction-to-Ambient
0.175
R
1) Derate linearly @ 5.7 mW/0C for TA > +250C
2) Derate linearly @ 50 mW/0C for TC > +250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
IE = 10 mAdc
Symbol
Min.
Max.
Unit
Vdc
7.0
V(BR)
EBO
Collector-Emitter Breakdown Voltage
IC = 0.1 Adc
70
120
170
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
V(BR)
CEO
Vdc
Collector-Emitter Cutoff Current
VEB = 0.5 Vdc, VCE = 60 Vdc
VEB = 0.5 Vdc, VCE = 110 Vdc
VEB = 0.5 Vdc, VCE = 160 Vdc
10
10
10
mAdc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
ICEX
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N4150, 2N4150S, 2N5237, 2N5237S, 2N5238, 2N5238S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS (con’t)
Collector-Base Cutoff Current
VCE = 60 Vdc
10
10
10
mAdc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
ICEO
VCE = 110 Vdc
VCE = 160 Vdc
Emitter-Base Cutoff Current
VBE = 7.0 Vdc
VBE = 5.0 Vdc
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 150 Vdc
10
0.1
mAdc
mAdc
IEBO
10
10
10
0.1
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
All Types
ICBO
VCB = 200 Vdc
VCB = 80 Vdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 5.0 Vdc
50
50
50
40
10
200
225
225
120
-
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
All Types
hFE
IC = 5.0 Adc, VCE = 5.0 Vdc
IC = 10 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
IC = 10 Adc, IB = 1.0 Adc
Base-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
All Types
0.6
2.5
Vdc
Vdc
VCE(sat)
1.5
25
VBE(sat)
IC = 10 Adc, IB = 1.0 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
1.5
7.5
½hfe½
IC = 0.2 Adc, VCE = 10 Vdc, f = 10 MHz
Forward Current Transfer Ratio
40
40
40
160
160
250
IC = 50 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz 2N4150, 2N4150S
2N5237, 2N5237S
hfe
2N5238, 2N5238S
Output Capacitance
350
pF
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
SWITCHING CHARACTERISTICS
Cobo
VCC = 20 Vdc, VBB = 5.0 Vdc,
td
tr
ts
tf
Delay Time
50
500
1.5
500
ms
ms
ms
ms
Rise Time
IC = 5.0 Adc, IB1 = 0.5 Adc
Storage Time
VCC = 20 Vdc, VBB = 5.0 Vdc,
Fall Time
IC = 5.0 Adc, IB1 = -IB2 = 0.5 Adc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 40 Vdc, IC = 0.22 Adc
Test 2
VCE = 70 Vdc, IC = 90 mAdc
Test 3
VCE = 120 Vdc, IC = 15 mAdc
VCE = 170 Vdc, IC = 3.5 mAdc
2N5237, 2N5237S
2N5238, 2N5238S
(3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
This datasheet has been download from:
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