BDX63C [SEME-LAB]
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR; NPN外延基地达林顿功率晶体管
| 型号： | BDX63C |
| 厂家： | 
SEME LAB |
| 描述： | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BDX63
BDX63A
BDX63B
BDX63C
NPN EPITAXIAL BASE
MECHANICAL DATA
DARLINGTON POWER
TRANSISTOR
Dimensions in mm
26.6 max.
4. 2
9.0 max.
2.5
B
E
NPN epitaxial bas e trans is tors in
monolithic Darlington circuit for
audio output s tages and general
amplifier and s witching
applications .
10.9
12.8
PNP complements are:
BDX62, BDX62A, BDX62B, BDX62C.
TO3 Package.
Case connected to collector.
ABSOLUTE MAXIMUM RATINGS (T
=25°C unless otherwise stated)
case
BDX BDX BDX BDX
63 63A 63B 63C
VCEO
VCBO
VEBO
IC
Collector - emitter voltage (open base)
Collector - base voltage (open emitter)
Emitter - base voltage (open collector)
Collector current
60
80
5
80
100 120
V
V
100 120 140
5
5
5
V
8
A
ICM
Collector current (peak)
12
A
IB
Base current
150
90
mA
W
Ptot
Tj
Total power dissipation at Tcase= 25°C
Maximum junction temperature
Storage junction temperature
Thermal resistance, junction to mounting base.
200
°C
Tstj
-65 to 200
1.94
°C
Rth j-mb
°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/93
BDX63
BDX63A
BDX63B
BDX63C
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise stated)
j
Parameter
Tes t Conditions
Min.
Typ. Max. Unit.
I = 0, V = V
CEOmax
0.2
E
CB
I
Collector cut-off current
mA
CBO
I = 0, V = ½V
, T = 200°C
j
2
E
CB
CBOmax
CEOmax
I
Collector cut-off current
Emitter cut-off current
I = 0, V = ½V
0.5
5
mA
mA
CEO
B
CE
I
I = 0, V = 5V
EBO
C
EB
I = 0.5A, V = 3V
2500
2600
C
CE
h
D.C. current gain (note 1)
I = 3A, V = 3V
1000
FE
C
CE
I = 8A, V = 3V
C
CE
V
Base - emitter voltage (note 1)
I = 3A, V = 3V
2.5
2
V
V
BE
C
CE
V
Collector - emitter saturation
voltage
CEsat
I = 3A, I = 12mA
C
B
C
f
Collector capacitance
Cut-off frequency
I = I = 0, V = 10V
100
100
pF
c
E
e
CB
I = 3A, V = 3V
kHz
hfe
C
CE
–I
= 0, I
= 4.5 A
E
Turn-off breakdown energy
with inductive load
Boff
Con
(BR)
50
mJ
t = 1ms, T = 100ms
p
h
/h
D.C. current gain ratio of
complementary matched pairs
FE1 FE2
2.5
I = 3A, V = 3V
C
CE
h
Small signal current gain
Diode, forward voltage
I = 3A, V = 3V, f = 1MHz
100
1.2
fe
C
CE
V
I = 3A
F
V
F
Note 1: Measured under pulse conditions , t < 300 s, < 2%
p
R1 typ. 8K
R2 typ. 100
Circuit diagram.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/93
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