2N6800LCC4 [SEME-LAB]
N–CHANNEL ENHANCEMENT MODE; N沟道增强模式
| 型号： | 2N6800LCC4 |
| 厂家： | 
SEME LAB |
| 描述： | N–CHANNEL ENHANCEMENT MODE |
| 文件： | 总2页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N6800LCC4
MECHANICAL DATA
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
Dimensions in mm (inches)
9.14 (0.360)
8.64 (0.340)
1.27 (0.050)
1.07 (0.040)
≈ 2.16 (0.085)
12 13 14 15 16
1.39 (0.055)
1.02 (0.040)
POWER MOSFETS
11
10
9
17
18
1
7.62 (0.300)
7.12 (0.280)
0.76 (0.030)
0.51 (0.020)
8
2
BVDSS
ID
RDS(on)
400V
3.0A
1.0Ω
0.33 (0.013)
0.08 (0.003)
Rad.
7
6
5
4
3
0.43 (0.017)
0.18 (0.007
Rad.
1.39 (0.055)
1.15 (0.045)
1.65 (0.065)
1.40 (0.055)
D
FEATURES
•
•
•
•
Dynamic dv/dt Rating
Simple Drive requirements
Ease of Paralleling
G
S
Hermetic Ceramic Surface Mount Package
LCC4 CERAMIC SURFACE
MOUNT PACKAGE
GATE PINS 4,5
DRAIN PINS 1,2,15,16,17,18
SOURCE PINS 6,7,8,9,10,11,12,13
ABSOLUTE MAXIMUM RATINGS TCASE = 25°C unless otherwise stated
VDSS
Drain - Source Voltage
400V
3A
ID
Drain Current
- Continuous (VGS = 10V, TC = 25°C)
- Continuous (VGS = 10V, TC = 100°C)
- Pulsed2
2A
IDM
Drain Current
12A
VGSS
Ptot
Gate - Source Voltage
20V
Total Power Dissipation at Tcase ≤ 25°C
De-rate Linearly above 25°C
25W
0.20W/°C
-55 to +150°C
5.0°C/W
4V/ns
Tj,Tstg
Rthj-mb
Operating and Storage Junction Temperature Range
Thermal Resistance Junction – Mounting Base
Peak Diode Recovery3
dv/dt
NOTES:
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width ≤ 380µS, Duty Cycle, δ 2%
3) TJ ≤ 150°C, VDD ≤ BVDSS, Suggested RG = 7.5 , ISD ≤ 1.5A, di/dt ≤ 50A/µs
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
DOC 7820, ISSUE 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
2N6800LCC4
STATIC ELECTRICAL RATINGS (Tcase=25°C unless otherwise stated)
Symbol Parameter Test Conditions
Min. Typ. Max. Unit
BVDSS
Drain – Source Breakdown Voltage
VGS = 0V
ID = 250µA
400
-
-
-
-
-
-
-
-
-
-
-
-
V
VDS = 320V
VGS = 0V
TC = 125°C
VDS = 0V
ID = 250µA
TC = 125°C
TC = -55°C
ID = 2A
-
25
IDSS
Zero Gate Voltage Drain Current
Gate – Source Leakage Current
µA
nA
-
250
100
4.0
-
IGSS
VGS = 20V
-
2.0
1.0
-
V
DS ≥ VGS
VGS(TH)
Gate Threshold Voltage
V
5.0
1.0
2.40
1.15
-
VGS = 10V
VGS = 10V
-
RDS(ON)
Drain – Source On State Resistance3
Forward Transconductance3
Ω
TC = 125°C
ID = 3A
-
-
gFS
V
DS ≥ 15V
IDS = 2A
2
S
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate – Source Charge2
Gate – Drain Charge2
Turn-On Delay
-
620
-
-
VDS = 25V
f = 1.0MHz
VGS = 0V
ID = 3A
pF
-
200
-
75
-
-
19.1
33
5.8
19.9
30
35
55
35
VDS = 200V
nC
Qgs
Qgd
Td(on)
tr
1.0
-
V
GS = 10V
6.7
-
-
-
-
-
-
Rise Time
-
VDD = 200V
RG = 7.5Ω
ID = 3A
VGS = 10V
ns
Td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current (MAX)
Pulsed Source Current (MAX)1
Diode Forward Voltage2
-
-
-
-
-
-
-
-
-
-
3
A
ISM
VSD
trr
12
VGS = 0V
Is = 3A
1.4
700
6.2
V
Reverse Recovery Time
Reverse Recovery Charge2
ns
µC
Is = 3A
VDD ≤ 50V
VGS = 0V
di/dt=100A/µs
Qrr
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
DOC 7820, ISSUE 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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