2N6800U [MICROSEMI]
N-CHANNEL MOSFET; N沟道MOSFET
| 型号： | 2N6800U |
| 厂家： | 
Microsemi |
| 描述： | N-CHANNEL MOSFET |
| 文件： | 总4页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
DEVICES
LEVELS
JAN
2N6800 2N6800U
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
VGS
400
Vdc
Vdc
Gate – Source Voltage
± 20
Continuous Drain Current
ID1
ID2
3.0
Adc
Adc
TC = +25°C
Continuous Drain Current
2.0
TC = +100°C
Max. Power Dissipation
Ptl
25 (1)
1.0 (2)
W
Ω
Drain to Source On State Resistance
Operating & Storage Temperature
Rds(on)
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C
TO-205AF
(formerly TO-39)
(2) VGS = 10Vdc, ID = 2.0A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
V(BR)DSS
400
Vdc
Vdc
VGS = 0V, ID = 1mAdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
VDS ≥ VGS, ID = 0.25mA, Tj = +125°C
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C
Gate Current
VGS = ±20V, VDS = 0V
IGSS1
IGSS2
±100
±200
nAdc
V
GS = ±20V, VDS = 0V, Tj = +125°C
Drain Current
GS = 0V, VDS = 320V
U – 18 LCC
IDSS1
IDSS2
25
0.25
µAdc
mAdc
V
VGS = 0V, VDS = 320V, Tj = +125°C
Static Drain-Source On-State Resistance
V
GS = 10V, ID = 2.0A pulsed
rDS(on)1
rDS(on)2
1.0
1.10
Ω
Ω
VGS = 10V, ID = 3.0A pulsed
Tj = +125°C
VGS = 10V, ID = 2.0A pulsed
rDS(on)3
VSD
2.40
1.4
Ω
Diode Forward Voltage
VGS = 0V, ID = 3.0A pulsed
Vdc
T4-LDS-0148 Rev. 1 (092062)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
Qg(on)
Qgs
Qgd
34.75
5.75
16.59
nC
VGS = 10V, ID = 3.0A
VDS = 200V
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 3.0A, VGS = 10Vdc,
Gate drive impedance = 7.5Ω,
VDD = 176Vdc
td(on)
tr
td(off)
tf
30
35
55
35
ns
di/dt ≤ 100A/µs, VDD ≤ 50V,
IF = 3.0A
Diode Reverse Recovery Time
trr
700
ns
T4-LDS-0148 Rev. 1 (092062)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
PACKAGE DIMENSIONS
Dimensions
Millimeters
Ltr
Inches
Min
Notes
Max
.355
.180
.370
.041
Min
7.75
4.07
8.51
0.23
Max
9.02
4.57
9.39
1.04
CD
CH
HD
h
.305
.160
.335
.009
J
k
LD
LL
LS
LU
.028
.029
.016
.500
.200 TP
.016
.034
.045
.021
.750
0.72
0.74
0.41
12.7
5.08 TP
0.41
0.86
1.14
0.53
2
3
7, 8
7, 8
6
19.05
.019
.050
0.48
1.27
7, 8
L1
L2
P
7, 8
7, 8
5
.250
.070
6.35
1.78
Q
r
.050
.010
1.27
0.25
4
9
α
45° TP
45° TP
6
NOTES:
1
2
3
4
5
Dimensions are in inches. Millimeters are given for general information only.
Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm).
Dimension k measured from maximum HD.
Outline in this zone is not controlled.
Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
6
LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
7
8
9
All three leads.
Radius (r) applies to both inside corners of tab.
Drain is electrically connected to the case.
10 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 1. Physical dimensions for TO-205AF.
T4-LDS-0148 Rev. 1 (092062)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
NOTES:
Dimensions
Millimeters
1
2
3
Dimensions are in inches.
Ltr
Inches
Min
Millimeters are given for general information only.
In accordance with ASME Y14.5M, diameters are equivalent to
φx symbology.
Max
.360
.295
.115
.055
.065
Min
8.77
7.11
2.41
1.02
1.40
Max
BL
BW
CH
LL1
LL2
LS
.345
.280
.095
.040
.055
4
Ceramic package only.
.050 BSC
1.27 BSC
LS1
LS2
LW
Q1
.025 BSC
.008 BSC
0.635 BSC
0.203 BSC
.020
.030
0.51
0.76
.105 REF
.120 REF
2.67 REF
3.05 REF
Q2
Q3
TL
TW
.045
.070
.120
.055
.080
.130
1.14
1.78
3.05
1.40
2.03
3.30
T4-LDS-0148 Rev. 1 (092062)
Page 4 of 4
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