2N6802 [NJSEMI]
POWER MOS FIELD-EFFECT TRANSISTORS; 功率MOS场效应晶体管型号: | 2N6802 |
厂家: | NEW JERSEY SEMI-CONDUCTOR PRODUCTS, INC. |
描述: | POWER MOS FIELD-EFFECT TRANSISTORS |
文件: | 总1页 (文件大小:179K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
2N6802SCC5205/019
Power Field-Effect Transistor, 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON
2N6804E3
Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, ROHS COMPLIANT, METAL CAN, TO-3, 2 PIN
MICROSEMI
2N6804PBF
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON
2N6804SCC5206/004
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON
2N6804SCC5206/004PBF
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON
2N6804_12
This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability applications.
MAS
2N6806SCC5206/004
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
INFINEON
2N6806SCC5206/004PBF
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON
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