2N6804 [MICROSEMI]
P-CHANNEL MOSFET; P沟道MOSFET
| 型号： | 2N6804 |
| 厂家： | 
Microsemi |
| 描述： | P-CHANNEL MOSFET |
| 文件： | 总3页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/562
DEVICES
LEVELS
JAN
2N6804
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Drain – Source Voltage
Symbol
Value
Unit
VDS
VGS
-100
± 20
Vdc
Vdc
Gate – Source Voltage
Continuous Drain Current
ID1
ID2
Ptl
-11
-7
Adc
Adc
W
TC = +25°C
TC = +100°C
TC = +25°C
Continuous Drain Current
Max. Power Dissipation
75 (1)
Drain to Source On State Resistance
Operating & Storage Temperature
Rds(on)
0.3 (2)
Ω
2N6804
TO-204AA (TO-3)
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = -7A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
Symbol Min. Max.
Unit
V(BR)DSS
-100
Vdc
Vdc
V
GS = 0V, ID = 1mAdc
Gate-Source Voltage (Threshold)
VGS(th)1
VGS(th)2
VGS(th)3
-2.0
-1.0
-4.0
-5.0
V
V
DS ≥ VGS, ID = -0.25mA
DS ≥ VGS, ID = -0.25mA, Tj = +125°C
VDS ≥ VGS, ID = -0.25mA, Tj = -55°C
Gate Current
IGSS1
IGSS2
±100
±200
V
GS = ±20V, VDS = 0V
nAdc
µAdc
VGS = ±20V, VDS = 0V, Tj = +125°C
Drain Current
VGS = 0V, VDS = -80V
IDSS1
IDSS2
-25
V
GS = 0V, VDS = -80V, Tj = +125°C
-0.25 mAdc
Static Drain-Source On-State Resistance
VGS = -10V, ID = -7A pulsed
VGS = -10V, ID = -11A pulsed
Tj = +125°C
rDS(on)1
rDS(on)2
0.3
0.36
Ω
Ω
VGS = -10V, ID = -7A pulsed
rDS(on)3
VSD
0.55
-4.7
Ω
Diode Forward Voltage
VGS = 0V, ID = -11A pulsed
Vdc
T4-LDS-0113 Rev. 2 (101520)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
Qg(on)
Qgs
Qgd
29
7.1
21
nC
VGS = -10V, ID = -11A
VDS = -80V
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = -11A, VGS = -10Vdc,
Gate drive impedance = 7.5Ω,
VDD = -35Vdc
td(on)
tr
td(off)
tf
60
140
140
140
ns
di/dt ≤ 100A/µs, VDD ≤ -50V,
IF = -11A
Diode Reverse Recovery Time
trr
250
ns
T4-LDS-0113 Rev. 2 (101520)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Millimeters
Symbol
Inches
Notes
3
Min
.250
.038
Max
.360
.043
.875
.440
.225
.135
.500
.050
.161
1.197
.525
.188
.675
Min
6.35
0.97
Max
9.15
CH
LD
0.110
22.23
11.18
5.72
CD
PS
.420
.205
.060
.312
10.67
5.21
1.52
7.92
3
3
PS1
HT
3.43
LL
12.70
1.27
LL1
MHD
MHS
HR
HR1
s1
.151
3.84
29.90
12.57
3.33
4.09
1.177
.495
.131
.655
30.40
13.34
4.78
16.64
17.15
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. These dimensions should be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane.
Measurement will be made at the seating plane.
4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a
.930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch
(0.15 mm) convex overall.
5. Mounting holes shall be deburred on the seating plane side.
6. Drain is electrically connected to case.
7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions of transistor (TO-204AA).
T4-LDS-0113 Rev. 2 (101520)
Page 3 of 3
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