2N6788L [SEME-LAB]

N-Channel MOSFET; N沟道MOSFET
2N6788L
型号: 2N6788L
厂家: SEME LAB    SEME LAB
描述:

N-Channel MOSFET
N沟道MOSFET

晶体 晶体管
文件: 总1页 (文件大小:16K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2N6788L  
Dimensions in mm (inches).  
N-Channel MOSFET  
8.64 (0.34)  
9.40 (0.37)  
8.01 (0.315)  
9.01 (0.355)  
in a  
Hermetically sealed TO39  
Metal Package.  
4.06 (0.16)  
4.57 (0.18)  
0.89  
max.  
(0.035)  
12.70  
(0.500)  
min.  
0.41 (0.016)  
0.53 (0.021)  
dia.  
N-Channel MOSFET.  
VDSS = 100V  
5.08 (0.200)  
typ.  
2.54  
(0.100)  
ID = 4.5A  
2
1
3
0.74 (0.029)  
1.14 (0.045)  
RDS(ON) = 0.3  
0.71 (0.028)  
0.53 (0.021)  
All Semelab hermetically sealed products can be  
processed in accordance with the requirements  
of BS, CECC and JAN, JANTX, JANTXV and  
JANS specifications.  
45°  
TO39 (TO205AF)  
PINOUTS  
1 – Source  
2 – Gate  
3 - Drain  
Parameter  
Min.  
Typ.  
Max.  
100  
4.5  
Units  
V
VDSS  
ID  
Drain – Source Breakdown Voltage  
Continuous Drain Current  
Power Dissipation  
A
PD  
20  
W
RDS(ON)  
CISS  
Qg  
Static Drain – Source On–State Resistance  
Input Capacitance  
0.3  
350  
pF  
nC  
ns  
ns  
ns  
ns  
Total Gate Charge  
17  
40  
70  
40  
70  
ttd(on)  
ttr  
ttd(off)  
tf  
Turn–On Delay Time  
Rise Time  
Turn–Off Delay Time  
Fall Time  
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab plc.  
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Generated  
11-Oct-02  

相关型号:

2N6788LCC4

N-CHANNEL POWER MOSFET ENHANCEMENT MODE
SEME-LAB

2N6788PBF

Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON

2N6788U

N-CHANNEL MOSFET
MICROSEMI

2N6789

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
INFINEON

2N678A

TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 15A I(C) | TO-3
ETC

2N678B

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 15A I(C) | TO-3
ETC

2N678C

TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 15A I(C) | TO-3
ETC

2N6790

3.5A, 200V, 0.800 Ohm, N-Channel Power
FAIRCHILD

2N6790

N–CHANNEL POWER MOSFET
SEME-LAB

2N6790E

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
INFINEON

2N6790EA

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON

2N6790EAPBF

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON